PH1090-550S MACOM | Alldatasheet

Document overview

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Technical content

Features

  • Designed for Short Pulse IFF Applications
  • NPN Silicon Microwave Power Transistor
  • Common Base Configuration
  • Broadband Class C Operation
  • High Efficiency Interdigitated Geometry
  • Diffused Emitter Ballasting Resistors
  • Gold Metalization System
  • Internal Input and Output Impedance Matching
  • Hermetic Metal/Ceramic Package Outline Drawing Notes: (unless otherwise specified) 1. Tolerances are: inches ± .005” (millimeters ± 0.13mm) Electrical Specifications at 25°C Avionics Pulsed Power Transistor - 550 Watts, 1030-1090 MHz, 10µs Pulse, 1% Duty PH1090-550S Absolute Maximum Rating at 25°C Parameter Symbol Rating Units Collector-Emitter Voltage VCES 80 V Emitter-Base Voltage V EBO 3.0 V Collector Current (Peak) IC 28 A Total Power Dissipation @ +25°C PTOT 1800 W Storage Temperature T stg -65 to +200 °C Junction Temperature T j 200 °C Broadband Test Fixture Impedance F (MHz) Z IF (Ω )Z OF (Ω ) 1030 4.0 - j3.5 1.4 - j1.6 1090 3.6 - j2.7 1.1 - j1.9 Symbol Parameter Test Conditions Min Max Units BV CES Collector-Emitter Breakdown IC =250mA 80 - V ICES Collector-Emitter Leakage VCE =45 V - 25 mA R TH(JC) Thermal Resistance V CC =50 V, Pout=550 W, f=1090 MHz - 0.05 °C/W Pin Input Power V CC =50 V, Pout=550 W, f=1090 MHz - 100 W G P Power Gain V CC =50 V, Pout=550 W, f=1090 MHz 7.5 - dB η Collector Efficiency V CC =50 V, Pout=550 W, f=1090 MHz 55 - % R L Input Return Loss V CC =50 V, Pout=550 W, f=1090 MHz 9 - dB VSWR-T Load Mismatch Tolerance V CC =50 V, Pout=550 W, f=1090 MHz - 10:1 - VSWR-S Load Mismatch Stability V CC =50 V, Pout=550 W, f=1090 MHz - 1.5:1 - TEST FIXTURE INPUT CIRCUIT ZIF TEST FIXTURE OUTPUT CIRCUIT ZOF50Ω 50Ω

Description

M/A-COM’s PH1090-550S is a silicon bipolar NPN transistor intended for use in L-band, 1.2 - 1.4 GHz avionics equipment such as IFF, mode-S and TCAS systems. Designed for common-base, class C broadband pulsed power applications, the PH1090-550S delivers 7.5 dB of gain at 550 watts of output power when operating with short pulse length (10µS), at 1 percent duty cycle. The transistor is housed in a 2-lead, rectan- gular metal-ceramic flange package, with internal input and output impedance matching networks. Diffused emitter ballast resistors and gold metalization assure ruggedness and long-term reliability.

Avionics Pulsed Power Transistor 550 Watts, 1030-1090 MHz, 10µs Pulse, 1 % Duty PH1090-550S M/A-COM Division of AMP Incorporated /G51 North America: Tel. (800) 366-2266, Fax (800) 618-8883 /G51 Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087 /G51 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 www.macom.com AMP and Connecting at a Higher Level are trademarks. Specifications subject to change without notice. V2.00 Test Fixture Electrical Schematic Top View Circuit Dimensions