PH1090-350L MACOM | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 2

Technical content

Features

  • NPN Silicon Microwave Power Transistor
  • Common Base Configuration
  • Broadband Class C Operation
  • High Efficiency Interdigitated Geometry
  • Diffused Emitter Ballasting Resistors
  • Gold Metalization System
  • Internal Input and Output Impedance Matching
  • Hermetic Metal/Ceramic Package Outline Drawing Notes: (unless otherwise specified) 1. Tolerances are: inches ± .005” (millimeters ± 0.13mm) Electrical Specifications at 25°C Avionics Pulsed Power Transistor - 350 Watts, 1030-1090 MHz, 250µs Pulse, 10% Duty PH1090-350L Absolute Maximum Rating at 25°C Parameter Symbol Rating Units Collector-Emitter Voltage VCES 80 V Emitter-Base Voltage V EBO 3.0 V Collector Current (Peak) IC 17 A Total Power Dissipation @ +25°C PTOT 750 W Storage Temperature T stg -65 to +200 °C Junction Temperature T j 200 °C Narrowband Test Fixture Impedance F (MHz) Z IF (Ω )Z OF (Ω ) 1090 2.5 - j1.5 1.1 + j0.9 Symbol Parameter Test Conditions Min Max Units BV CES Collector-Emitter Breakdown IC =250mA 80 - V ICES Collector-Emitter Leakage VCE =45 V - 25 mA R TH(JC) Thermal Resistance V CC =45 V, Pin=350 W, f=1090 MHz - 0.2 °C/W Pin Input Power V CC =45 V, Pin=350 W, f=1090 MHz - 55 W G P Power Gain V CC =45 V, Pin=350 W, f=1090 MHz 8.0 - dB η Collector Efficiency V CC =45 V, Pin=350 W, f=1090 MHz 55 - % R L Input Return Loss V CC =45 V, Pin=350 W, f=1090 MHz 9 - dB VSWR-T Load Mismatch Tolerance V CC =45 V, Pin=350 W, f=1090 MHz - 2:1 - VSWR-S Load Mismatch Stability V CC =45 V, Pin=350 W, f=1090 MHz - 1.5:1 - TEST FIXTURE INPUT CIRCUIT ZIF TEST FIXTURE OUTPUT CIRCUIT ZOF50Ω 50Ω

Description

M/A-COM’s PH1090-350L is a silicon bipolar NPN power transistor intended for use in L-band, 1.2 - 1.4 GHz avionics equipment such as IFF, mode-S and TCAS systems. Designed for common-base, class C, broadband pulsed power applica- tions, the PH1090-350L delivers 7.5 dB of gain at 350 watts of output power when operating with long pulse length (250µS), at 10 percent duty cycle. The transistor is housed in a 2-lead, rectangular metal-ceramic flange package, with internal input and output impedance matching networks. Diffused emitter ballast resistors and gold metalization assure ruggedness and long-term reliability.

Avionics Pulsed Power Transistor 350 Watts, 1030-1090 MHz, 250µs Pulse, 10 % Duty PH1090-350L M/A-COM Division of AMP Incorporated /G51 North America: Tel. (800) 366-2266, Fax (800) 618-8883 /G51 Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087 /G51 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 www.macom.com AMP and Connecting at a Higher Level are trademarks. Specifications subject to change without notice. V2.00 Test Fixture Electrical Schematic Top View Circuit Dimensions