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NPN silicon microwave power transistor Common emitter configuration Broadband Class AB operation Interdigitated geometry Diffused emitter ballasting resistors Gold metalization system Internal input and output impedance matching Hermetic metal / ceramic package Outline Drawing Notes: (unless otherwise specified) 1. Tolerances are: inches ± .005” (millimeters ± 0.13mm) ABSOLUTE MAXIMUM RATING AT 25°C ELECTRICAL SPECIFICATIONS AT 25°C Parameter Symbol Rating Units Collector-Base Voltage VCBO 56 V Collector-Emitter Voltage VCES 56 V Emitter-Base Voltage VEBO 3.0 V Collector Current IC 5.6 A Total Power Dissipation PTOT 175 W Junction Temperature TJ 200 °C Storage Temperature TSTG -55 to + 200 °C Thermal Resistance θJC 1.0 °C/W Parameter Symbol Min Max Units Test Conditions Collector-Emitter Breakdown Voltage BVCES 56 - V IC = 50mA Collector-Emitter Leakage Current ICES - 5.0 mA VCE = 28V Collector-Base Breakdown Voltage BVCBO 56 - V IC = 50mA Emitter-Base Breakdown Voltage BVEBO 3.0 - V IB = 10mA DC Forward Current Gain hFE 15 100 - VCE = 5.0V, IC = 0.5 A Input Power PIN 5.5 8.8 W VCC = 28V, IcQ = 12 mA, Pout = 42 W, F =1450MHz Collector Current IC - 3.75 A VCC = 28V, IcQ = 12 mA, Pout = 42 W, F =1450MHz Input Return Loss RL 10 - dB VCC = 28V, IcQ = 12 mA, Pout = 42 W, F =1450MHz Load Mismatch Tolerance VSWR-T - 3.1 - VCC = 28V, IcQ = 12 mA, Pout = 42 W, F =1450MHz Load Mismatch Tolerance IMD3 - 1.5:1 - VCC = 28V, IcQ = 12 mA, Pout = 42 W, F =850MHz Saturated Output Power PSAT 50 - W VCC = 28V, IcQ = 12 mA, F =1450MHz F (MHz) ZIN (Ω) ZOF (Ω) 850 2.0 - j3.6 3.0 - j4.9 950 2.4 - j2.5 2.3 - j3.1 1050 3.1 - j1.8 2.0 - j2.0 1150 3.5 - j1.9 1.8 - j1.4 1250 3.3 - j2.4 1.7 - j0.9 1350 2.5 - j2.4 1.4 - j0.5 1450 1.7 - j1.8 1.2 - j0.1 TYPICAL OPTIMUM DEVICE IMPEDANCES