PH0104-85 MACOM | Alldatasheet
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l NPN Silicon Power Transistor l Common Emitter Configuration l Class AB Broadband Operation l 85 Watt PEP Output l Diffused Emitter Ballasting Resistors l Gold Metallization System l Proven in Thousands of ARC-182 Airborne Radios Absolute Maximum Ratings at 25°C I Parameter ) Symbol 1 Rating ( Units 1 Collector-Emitter Voltage V,,, Emitter-Base Voltage V ES0 65 V 4.0 V I Collector Current (Peak) I lc ( IO I A I Power Dissipation PO 194 w JunctionTemperature TJ 200 “C StorageTemperature T ST0 -40 to +125 “C Thermal Resistance I 8.K I 0.9 I “WJv I .a20 c’ :23.83) COATING -, LlNLiSS 3TH;RWISi NJTEII, TOLERANCES ARE (MILLIPIETERS +,,3nH) Electrical Characteristics at 25°C I Parameter ( Symbol 1 Min 1 pax 1 Units I lest Conditions I ( Collector-Emitter Breakdown Voltage 1 BV,,, I 65 I - 1 v I I,=10 mA, v,,=o.o v I I Base-Emitter Breakdown Voltage 1 BVm I 4.0 I ) v I I,=IO mA, I,=O.O A I Collector-Emitter Leakage Current DC Forward Current Gain ‘CES h cc 4 mA 20 80 - v,,=30 v
1 Input Power I PIN I - I 16 ) W ) V,,=27 V, I,,=50 mA, Pod85 W, F=400 MHZ I
7.3 - dB V,,=27 V, I,,=50 mA, PO,,,=85 W. F=400 MHz 45 - % V,,=27 V, I,,=50 mA, Pob,=85 W, F=400 MHz 9 - dB !I,,=27 V, I,,=50 mA, P,~85 W, F=400 MHz Load Mismatch Tolerance I VBWH-T I - I 3:l I - ) V,,=27V, 1,,=5omA, ~~~85 w, F=~OOMHZ Specifications Subject to Change Without Notice. 9-86 North America: Tel. (800) 366-2266 n Asia/Pacific: Tel. +81 (03) 3226-1671 Fax (800) 618-8883 Fax +81 (03) 3226-1451 MIA-COM, Inc. Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020