P6SMB UMW | Alldatasheet

Document overview

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Technical content

FEATURES

  • Low profile package
  • Ideal for automated placement
  • Glass passivated chip junction
  • Available in uni-directional and bi-directional
  • 600 W peak pulse power capability with a 10/1000 μs waveform, repetitive rate (duty cycle): 0.01 %
  • Excellent clamping capability
  • Very fast response time
  • Low incremental surge resistance
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
  • AEC-Q101 qualified available - Automotive ordering code: base P/NHE3 or P/NHM3 MECHANICAL DATA Case: SMB (DO-214AA) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/N-M3 - halogen-free, RoHS-compliant, commercial grade Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified Base P/NHM3_X - halogen-free, RoHS-compliant, and AEC-Q101 qualified for 250 V to 540 V type) Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3, M3, HE3, and HM3 suffix meets JESD 201 class 2 whisker test Polarity: for uni-directional types the band denotes cathode end, no marking on bi-directional types Notes (1) Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2 (2) Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL VALUE UNIT Peak power dissipation with a 10/1000 μs waveform (1)(2) (fig. 1) PPPM 600 W Power dissipation on infinite heatsink at TA = 50 °C PD 5.0 W Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2) IFSM 100 A Operating junction and storage temperature range TJ, TSTG -65 to +150 °C 0.086(2.20) 0.077(1.95) 0.155(3.94) 0.130(3.30) 0.180(4.57) 0.160(4.06) SMB(DO-214AA) Cathode Band 0.096(2.44) 0.084(2.13) 0.060(1.52) 0.030(0.76) 0.012(0.305) 0.006(0.152) 0.008(0.2) 0(0) 0.220(5.59) 0.205(5.21) Dimensions in inches and (millimeters) Maximum Instantaneous Forward Voltage at 50.0A for Unidirectional Only (Note 4) VF 3.5 Volts UMW P6SMB Series UMW R R UMW R R www.umw-ic.com 1 友台半导体有限公司友台半导体有限公司

(1) Pulse test: tp ≤ 50 ms (2) Surge current waveform per fig. 3 and derate per fig. 2 (3) For bi-directional types with VWM of 10 V and less, the ID limit is doubled (4) All terms and symbols are consistent with ANSI/IEEE CA62.35 (5) V F = 3.5 V at I F = 50 A (uni-directional only) ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)www.umw-ic.com 2 友台半导体有限公司友台半导体有限公司 UMW P6SMB Series UMW R R UMW R R

RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Fig. 1 - Peak Pulse Power Rating Curve Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature 0.1 µs 1.0 µs 10 µs 100 µs 1.0 ms 10 ms 100 0.1 P PPM - Peak Pulse Power (kW) td - Pulse Width (s) 0 25 50 75 100 100 125 150 175 200 TJ - Initial Temperature (°C) Peak Pulse Power (P PP ) or Current (I PP Derating in Percentage, % t - Time (ms) Fig. 3 - Pulse Waveform VWM - Reverse Stand-Off Voltage (V) Fig. 4 - Typical Junction Capacitance tp - Pulse Duration (s) Fig. 5 - Typical Transient Thermal Impedance Number of Cycles at 60 Hz Fig. 6 - Maximum Non-Repetitive Peak Forward Surge Current 100 150 td 0 1.0 2.0 3.0 4.0 IPPM - Peak Pulse Current, % I RSM tr = 10 µs Peak Value IPPM Half Value - IPPM IPP 10/1000 µs Waveform as defined by R.E.A. TJ = 25 °C Pulse Width (td) is defined as the Point where the Peak Current decays to 50 % of IPPM 100 1000 101 100 200 Uni-Directional Bi-Directional 6000 °CTJ = 25 f = 1.0 MHz mVp-p 50 = Vsig Measured at Zero Bias at VR, Measured Stand-Off Voltage VWM C J - Junction Capacitance (pF) 0.1 1.0 100 0.001 0.01 0.1 1 10 1000 100 Transient Thermal Impedance (°C/W) 200 100 1 10010 8.3 ms Single Half Sine-Wave Uni-Directional Only Peak Forward Surge Current (A) UMW P6SMB Series UMW R R UMW R R www.umw-ic.com 3 友台半导体有限公司友台半导体有限公司

ww.umw-ic.com 4 友台半导体有限公司 UMW P6SMB Series UMW R R UMW R R