PG600R ZSELEC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
Features
! Diff us ed Junction ! Low Forward Voltage Drop ! H i g h C u r r e n t C a p a b i l i t y A B A ! High Reliability ! High Surge Current Capability Me c h a n i c a l D a t a C ! C a se : R - 6 , M o l d e d P l a s t i c D ! Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 ! Polarity: Cathode Band ! Weight: 2.1 grams (approx.) ! Mounting Position: Any ! Marking: Type Number ! Lead Free: For RoHS / Lead Free Version Maximum R atings and Electrical Characteristics @TA=25° C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic P eak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 50 100 200 400 600 800 1000 V RM S Reverse Voltage VR(RM S) 35 70 140 280 420 560 700 V A verage Rectified Output Current ( N o t e 1 ) @ T A = 55°C IO 6.0 A Non-Repet itive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM 300 A Forward V oltage @I F = 6 .0A V FM 1.28 V P eak Reverse Current @T A = 25° C At Rated DC Blocking Voltage @T A = 100° C IRM 2.0 200 µA Revers e Recovery Time (Note 2) trr 150 250 450 nS T ypical Junction Capacitance (Note 3) Cj 100 pF Operat i ng Temperature Range Tj -55 to +150 ° C S t orage Temperature Range TSTG -55 to +150 ° C Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case P-600/R-6 Dim Min Max A 25.4 B 8.60 9.10 C 1.20 1.30 D 8.60 9.10 All D imensions in mm 1 of 2 Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com PG600R – PG6010R PG600R PG600R – PG6010R Sy mbol UnitPG601R PG602R PG604R PG606R PG608 R PG6010R 6.0 A GLASS PASSIVATED FAST RECOVERY DIODE
/G01/G01 0 25 50 75 100 125 150 175 I , AVERAGE FORWARD CURRENT(AV) T , AMBIENT TEMPERATURE ( C) Fig. 1, Typical Forward Current Derating Curve A ° 0.1 100 1000 0.6 0.8 I , INSTANTANEOUS FORWARD CURRENT (A)F V ,INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 3, Typical Instantaneous Forward Characteristics F T = 25 C Pulse Width = 300 s 1% Duty Cycle J ° m 100 150 200 250 300 350 1 10 100 I , PEAK FORWARD SURGE CURRENT (A)Fsm NUMBEROF CYCLES AT 60Hz Fig. 2 Max Non-Repetitive Peak Surge Current 8.3ms Single Half Sine-Wave JEDEC Method 1.0 100 1000 1.0 10 100 CAPACITANCE (pF)j V , REVERSEVOLTAGE (V) Fig. 4 Typical Junction Capacitance R T = 25 C f = 1.0MHz j ° 50VDC Approx NI (Non-inductive)W 10 NIW 1.0 NI W Oscilloscope (Note1) Pulse Generator (Note2) Device Under T est trr Settimebasefor5 /10ns/cm +0.5A -0.25A -1.0ANotes: Rise Time = 7.0ns max. Input Impedance = 1.0M , 22pF. 2. Rise Time = 10ns max. Input Impedance = 50 . W W Fig.5 Reverse Recovery Time Characteristic and Test Circuit (+) (+) (-) (-) 2 of 2 Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com PG600R – PG6010R PG600R – PG6010R