PG500R ZSELEC | Alldatasheet
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! Diff used J unction ! Low Forward Voltage Drop ! H i g h C u r r e n t C a p a b i l i t y A B A ! High Reliability ! High Surge Current Capability M e ch a n i c a l D a t a ! C as e : R - 6 , M o l d e d P l a s t i c D ! Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 ! Polarity: Cathode Band ! Weight: 2.1 grams (approx.) ! Mounting Position: Any ! Marking: Type Number ! Lead Free: For RoHS / Lead Free Version M aximum Ratings and Electrical Characteristics @TA=2 5°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRW M VR 100 200 400 600 800 1000 V RMS Reverse Voltage VR( RMS) 35 70 140 280 420 560 700 V Average Rectified Output Current ( N o t e 1 ) @ T A = 55°C IO 5. 0 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFS M 300 A Forward Voltage @I F = 5.0A V FM 1. 28 V P eak Reverse Current @T A = 25°C At Rated DC Blocking Voltage @T A = 100°C IRM 2.0 200 µA Reverse Recovery Time (Note 2) trr 150 250 450 nS Typical Junction Capacitance (Note 3) Cj 100 pF Operat ing Temperature Range Tj -55 t o +150 °C S torage Temperature Range TST G -55 t o +150 °C Not e: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case 1 of 2 Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com C DO-201 AD Di m M in Max A 25. 4 — B 8.50 9. 50 C 1.20 1. D 5.0 5. 60 A ll Dimensions in mm DO-201AD Di m M in Max A 24. 5 — B 7. 20 9.50 C 1.10 1. D 5.00 5. 60 A ll Dimensions in mm PG500R – PG5010R PG500R PG500R – PG5010R Sy mbol UnitPG501R PG502R PG504R PG506R PG508 R PG5010R 5.0 A GLASS PASSIVATED FAST RECOVERY DIODE
/G01/G01 0 25 50 75 100 125 150 175 I , A VERAGE FORWARD CURRENT(AV) T , AMBIENTTEMPERA TURE ( C) Fig. 1, Typical Forward Current Derating Curve A ° 0.1 100 1000 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 I , INSTANT ANEOUS FORWARD CURRENT (A)F V , INSTANT ANEOUS FORWARD VOLTAGE (V) Fig. 3, Typical Instantaneous Forward Characteristics F T = 25C Pulse Width = 300 s 1% Duty Cycle J ° m 100 150 200 250 300 350 1 10 100 I , PEAK FOR WARD SURGE CURRENT (A)Fsm NUMBER OF CYCLESA T 60Hz Fig. 2 Max Non-Repetitive Peak Surge Current 8.3ms Single Half Sine-Wave JEDEC Method 1.0 100 1000 1.0 10 100 C, CAPACIT ANCE (pF)j V , REVERSEVOL TAGE (V) Fig. 4 Typical Junction Capacitance R T = 25C f = 1.0MHz j ° 50V DC Approx
50 NI (Non-inductive)W 10
1.0 NI W Oscilloscope (Note 1) Pulse Generator (Note 2) Device Under Test trr Settimebasefor5/10ns/cm +0.5A -0.25A -1.0ANotes: 1.Rise T ime = 7.0ns max. Input Impedance = 1.0M , 22pF. 2. Rise Time = 10ns max. Input Impedance = 50 . W W Fig. 5 ReverseRecovery Time Characteristic and Test Circuit (+) (+) (-) (-) 2 of 2 Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com PG500R – PG5010R PG500R – PG5010R