PG28CUS23 KEC | Alldatasheet

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Technical content

  1. 11. 8 1/3 SEMICONDUCTOR TECHNICAL DATA PG2.8CUS23 Low Voltage EPD TVS Diode for ESD Protection in Portable Electronics Revision No : 1 Protection in Portable Electronics Applications.

FEATURES

EPD(Enhanced Punch-Through Diode) Structure.

400 Watts peak pulse power (tp=8/20

Transient protection for high-speed data lines to IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact) IEC 61000-4-4(EFT) 40A(tp=5/50ns) IEC 61000-4-5(Lightning) 24A(tp=8/20 One device protects one directional line. Tow devices protect two high-speed line pairs. Low capacitance. Low leakage current. Low operating and clamping voltage.

APPLICATIONS

Cellular Phone Handsets and Accessories. Microprocessor based equipment. Personal Digital Assistants (PDA’s) Notebooks, desktops PC, & servers. High-Speed data lines. Laser Diode Protection. LAN/WAN equipment. 10/100 Ethernet. MAXIMUM RATING (Ta=25 DIM MILLIMETERS 1. STEERING DIODE 2. EPD (TVS) 3. COMMON CATHODE SOT-23 A B C D E 2.93 0.20 1.30+0.20/-0.15 0.45+0.15/-0.05 2.40+0.30/-0.20 G 1.90 H J K L M N 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55

0.20 MIN

1.00+0.20/-0.10 M J K E 2 3 H G A N C B D 1.30 MAX LL PP P 7 CHARACTERISTIC SYMBOL RATING UNIT Peak Pulse Power (tp=8/20 s) PPK 400 W Peak Pulse Current (tp=8/20 s) IPP 24 A Operating Temperature Tj -55 150 Storage Temperature Tstg -55 150 Type Name Marking Lot No.3 2P8

pn structure normally found in traditional silicon-avalanche TVS diodes. the capability to absorb high transient currents. The IV characteristic curve of the EPD device is shown in figure 1. conduct as it is biased in the reverse direction. through the device must fall below the snap-back current. Figure 1. EPD TVS VI Characteristic curve.

  1. 11. 8 3/3 PG2.8CUS23 Revision No : 1 PULSE DURATION tp (µs) 0.1 1 100 10 PPPEAK PULSE POWER P (kW) 0.01 0.1 Peak Pulse Power 8/20us Average Power Waveform Parameters : tr=8µs e -t td=20µs td=lpp/2 PP RATED POWER OR I (%) PP 110 50250 AMBIENT TEMPERATURE Ta ( C) POWER DERATION CURVE 75 100 125 150 100 PEAK PULSE CURRENT I (%) PP 110 1050 TIME (µs) PULSE WAVEFORM 15 20 25 30 100 Waveform Parameters : tr=8µs td=20µs CLAMPING VOLTAGE V (V) C 151050 PEAK PULSE CURRENT I (A) CLAMPING VOLTAGE VS. PEAK PULSE CURRENT 20 30 25 35 CAPACITANCE C (pF) J REVERSE VOLTAGE V (VOLTS) Pin 3 to 1 & 2 (Pin 1 & 2 tied together) C - VR R J 100 CAPACITANCE C (pF) J REVERSE VOLTAGE V (VOLTS) Pin 1 to 2 (Pin 3 N.C.) C - VR R J Pin 3 to 2 Pin 1 to 2 NON-REPETITIVE PEAK PULSE POWER VS. PULSE TIME