PG2430T6Z-E2

DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 14

Technical content

31 fo 1 egaP 00.1.veR 0010JE0300SD90R Oct 24, 2011 Preliminary Data Sheet μPG2430T6Z GaAs Integrated Circuit SP3T Switch for Bluetooth® and 802.11a/b/g

DESCRIPTION

The μPG2430T6Z is a GaAs MMIC SP3T switch which was developed for Bluetooth, wireless LAN. This device can operate at frequencies from 0.5 to 6.0 GHz, with low insertion loss and high isolation. This device is housed in a 8-pin plastic TSON (Thin Small Out-line Non-leaded) package and is suitable for high- density surface mounting.

FEATURES

• Switch Control voltage : Vcont (H) = 3.0 V TYP., Vcont (L) = 0 V TYP.
• Low insertion loss : Lins = 0.55 dB TYP. @ f = 2.5 GHz : Lins = 0.65 dB TYP. @ f = 6.0 GHz
• High isolation : ISL = 28 dB TYP. @ f = 2.5 GHz : ISL = 25 dB TYP. @ f = 6.0 GHz
• Handling power : Pin (0.1 dB) = +28.0 dBm TYP. @ Vcont (H) = 3.0 V, Vcont (L) = 0 V
• High-density surface mounting : 8-pin plastic TSON package (1.5 × 1.5 × 0.37 mm)

APPLICATIONS

• Bluetooth and IEEE802.11a/b/g etc.

ORDERING INFORMATION

Part Number Order Number Package Marking Supplying Form μPG2430T6Z-E2 μPG2430T6Z-E2-A 8-pin plastic TSON (Pb-Free) G6L • Embossed tape 8 mm wide

• Pin 1, 8 face the perforation side of the tape
• Qty 3 kpcs/reel Remark To order evaluation samples, please contact your nearby sales office. Part number for sample order: μPG2430T6Z-A CAUTION Although this device is designed to be as robust as possible, ESD (Electrostatic Discharge) can damage this device. This device must be protected at all times from ESD. Static charges may easily produce potentials of several kilovolts on the human body or equipment, which can discharge without detection. Industry-standard ESD precautions must be employed at all times. R09DS0030EJ0100 Rev.1.00 Oct 24, 2011 A Business Par tner of Renesas Electronics Corporation.

μPG2430T6Z 31 fo 2 egaP 00.1.veR 0010JE0300SD90R Oct 24, 2011 PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM Pin No. Pin Name

1 RFC

2 NC Note

3 Vcont1

4 RF1

5 RF2

6 Vcont2

7 Vcont3

(Bottom View) (Top View) G6L (Top View) RFC NC Vcont1 RF1 RF2 RF3 Vcont3 Vcont2

8 RF3

Note: Non-Connection Remark Exposed pad : GND TRUTH TABLE Vcont1 Vcont2 Vcont3 RFC−RF1 RFC−RF2 RFC−RF3 High Low Low ON OFF OFF Low High Low OFF ON OFF Low Low High OFF OFF ON ABSOLUTE MAXIMUM RATINGS (TA = +25°C, unless otherwise specified) Parameter Symbol Ratings Unit Switch Control Voltage Vcont +6.0 Note V Input Power (Vcont (H) = 3.0 V) Pin +32 dBm Operating Ambient Temperature TA −45 to +85 °C Storage Temperature Tstg −55 to +150 °C Note: ⎪Vcont (H) − Vcont (L)⎪ ≤ 6.0 V RECOMMENDED OPERATING RANGE (TA = +25°C) Parameter Symbol MIN. TYP. MAX. Unit Operating Frequency f 0.5 − 6.0 GHz Switch Control Voltage (H) Vcont (H) 1.6 3.0 3.6 V Switch Control Voltage (L) Vcont (L) −0.2 0 0.2 V Control Voltage Difference (H) ΔVcont (H) Note 1 −0.1 0 0.1 V Control Voltage Difference (L) ΔVcont (L) Note 2 −0.1 0 0.1 V Notes: 1. ΔVcont (H) is a difference between the maximum and the minimum control voltages among Vcont1 (H), Vcont2 (H) and Vcont3 (H). 2. ΔVcont (L) is a difference between the maximum and the minimum control voltages among Vcont1 (L), Vcont2 (L) and Vcont3 (L). A Business Par tner of Renesas Electronics Corporation.

μPG2430T6Z 31 fo 3 egaP 00.1.veR 0010JE0300SD90R Oct 24, 2011 ELECTRICAL CHARACTERISTICS 1 (TA = +25°C, Vcont (H) = 3.0 V, Vcont (L) = 0 V, ZO = 50 Ω, DC blocking capacitors = 8 pF, unless otherwise specified) Parameter Symbol Path Test Conditions MIN. TYP. MAX. Unit L ssoL noitresnI ins RFC to f = 0.5 to 1.0 GHz Note 1 − 0.45 0.60 dB zHG 0.2 ot 0.1 = f 3 ,2 ,1FR Note 1 − 0.45 0.60 dB zHG 5.2 ot 0.2 = f − 0.55 0.70 dB zHG 9.4 ot 5.2 = f − 0.60 0.80 dB zHG 0.6 ot 9.4 = f − 0.65 0.90 dB zHG 0.1 ot 5.0 = f ot CFR LSI noitalosI Note 1 24 28 − dB zHG 0.2 ot 0.1 = f 3 ,2 ,1FR Note 1 24 28 − dB 82 32 zHG 5.2 ot 0.2 = f )FFO( − dB 82 32 zHG 9.4 ot 5.2 = f − dB 52 02 zHG 0.6 ot 9.4 = f − dB zHG 0.1 ot 5.0 = f LR ssoL nruteR Note 1 − 23 − dB zHG 0.2 ot 0.1 = f Note 1 16 23 − dB 32 61 zHG 5.2 ot 0.2 = f − dB 32 61 zHG 9.4 ot 5.2 = f − dB 32 01 zHG 0.6 ot 9.4 = f − dB Input Power Note 2 RF1, 2, 3 f = 6.0 GHz +25.0 +28.0 − dBm 1 dB Loss Compression Pin (1 dB) RFC to f = 2.5 GHz +28.0 +31.0 − dBm Input Power Note 3 RF1, 2, 3 f = 6.0 GHz +28.0 +31.0 − dBm Input 3rd Order Intercept Point IIP3 f = 2.5 GHz, 2 tone,

5 MHz spacing

− 53 − dBm 2nd Harmonics 2f0 f = 2.5 GHz, Pin = +22 dBm − 75 − dBc 3rd Harmonics 3f0 f = 2.5 GHz, Pin = +22 dBm − 75 − dBc Switch Control Current Icont No RF input − 0.1 5.0 μA Switch Control Speed tSW 50% CTL to 90/10% RF − 50 300 ns Notes: 1. DC blocking capacitors = 56 pF at f = 0.5 to 2.0 GHz 2. Pin (0.1 dB) is the measured input power level when the insertion loss increases 0.1 dB more than that of the linear range. 3. Pin (1 dB) is the measured input power level when the insertion loss increases 1 dB more than that of the linear range. CAUTION It is necessary to use DC blocking capacitors with this device. A Business Par tner of Renesas Electronics Corporation.

μPG2430T6Z 31 fo 4 egaP 00.1.veR 0010JE0300SD90R Oct 24, 2011 ELECTRICAL CHARACTERISTICS 2 (TA = +25°C, Vcont (H) = 1.8 V, Vcont (L) = 0 V, ZO = 50 Ω, DC blocking capacitors = 8 pF, unless otherwise specified) Parameter Symbol Path Test Conditions MIN. TYP. MAX. Unit L ssoL noitresnI ins RFC to f = 0.5 to 1.0 GHz Note 1 − 0.45 0.60 dB zHG 0.2 ot 0.1 = f 3 ,2 ,1FR Note 1 − 0.45 0.60 dB zHG 5.2 ot 0.2 = f − 0.55 0.70 dB zHG 9.4 ot 5.2 = f − 0.60 0.80 dB zHG 0.6 ot 9.4 = f − 0.65 0.90 dB zHG 0.1 ot 5.0 = f ot CFR LSI noitalosI Note 1 24 28 − dB zHG 0.2 ot 0.1 = f 3 ,2 ,1FR Note 1 24 28 − dB 82 32 zHG 5.2 ot 0.2 = f )FFO( − dB 82 32 zHG 9.4 ot 5.2 = f − dB 52 02 zHG 0.6 ot 9.4 = f − dB zHG 0.1 ot 5.0 = f LR ssoL nruteR Note 1 − 23 − dB zHG 0.2 ot 0.1 = f Note 1 16 23 − dB 32 61 zHG 5.2 ot 0.2 = f − dB 32 61 zHG 9.4 ot 5.2 = f − dB 32 01 zHG 0.6 ot 9.4 = f − dB Input Power Note 2 RF1, 2, 3 f = 6.0 GHz +19.0 +22.0 − dBm 1 dB Loss Compression Pin (1 dB) RFC to f = 2.5 GHz +24.0 +27.0 − dBm Input Power Note 3 RF1, 2, 3 f = 6.0 GHz +22.0 +25.0 − dBm Input 3rd Order Intercept Point IIP3 f = 2.5 GHz, 2 tone, − 50 − dBm 2nd Harmonics 2f0 f = 2.5 GHz, Pin = +17 dBm − 75 − dBc 3rd Harmonics 3f0 f = 2.5 GHz, Pin = +17 dBm − 75 − dBc Switch Control Current Icont No RF input − 0.1 5.0 μA Switch Control Speed tSW 50% CTL to 90/10% RF − 100 600 ns Notes: 1. DC blocking capacitors = 56 pF at f = 0.5 to 2.0 GHz 2. Pin (0.1 dB) is the measured input power level when the insertion loss increases 0.1 dB more than that of the linear range. 3. Pin (1 dB) is the measured input power level when the insertion loss increases 1 dB more than that of the linear range. CAUTION It is necessary to use DC blocking capacitors with this device. A Business Par tner of Renesas Electronics Corporation.

μPG2430T6Z 31 fo 5 egaP 00.1.veR 0010JE0300SD90R Oct 24, 2011 EVALUATION CIRCUIT 3Vcont1 1 000 pF RFC Vcont2 Vcont3 4RF1 5 RF2 C1C1 C1 C1 Note 1 000 pF 1 000 pF RF3 Note: It is recommended to connect the pin directly to the ground, or not to connect the pin to anything. Remarks C1 : 0.5 to 2.0 GHz 56 pF : 2.0 to 6.0 GHz 8 pF The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.

APPLICATION INFORMATION

• CB are DC blocking capacitors external to the device. A value of 8 pF is sufficient for operation from 2 GHz to 6 GHz bands. The value may be tailored to provide specific electrical responses.
• The RF ground connections should be kept as short as possible and connected to directly to a good RF ground for best performance.
• LESD provides a means to increase the ESD protection on a specific RF port, typically the port attached to the antenna. A Business Par tner of Renesas Electronics Corporation.

μPG2430T6Z 31 fo 6 egaP 00.1.veR 0010JE0300SD90R Oct 24, 2011 TYPICAL CHARACTERISTICS (Vcont (H) = 3.0 V, Vcont (L) = 0 V, ZO = 50 Ω, DC blocking capacitors = 8 pF, unless otherwise specified) Insertion Loss Lins (dB) Frequency f (GHz) RFC-RF1/RF2/RF3 INSERTION LOSS vs. FREQUENCY –0.4 –1.2 631 2 4 50 –0.2 –0.6 –0.8 DC blocking capacitors = 56 pF 8 pF Vcont (H) = 1.8 - 3.0 V Isolation ISL (dB) Frequency f (GHz) RFC-RF1/RF2/RF3 ISOLATION vs. FREQUENCY –50 –10 –15 –20 –25 –30 –35 –40 –45 RFC-RF3 (RF1 on) 631 2 4 50 RFC-RF2 RFC-RF1 RFC-RF3 (RF2 on) DC blocking capacitors = 56 pF Vcont (H) = 1.8 - 3.0 V –50 –10 –15 –20 –25 –30 –35 –40 –45 631 2 4 50 DC blocking capacitors = 56 pF Vcont (H) = 1.8 - 3.0 V Isolation ISL (dB) Frequency f (GHz) RFC-RF1/RF2/RF3 ISOLATION vs. FREQUENCY –50 –10 –15 –20 –25 –30 –35 –40 –45 RFC-RF3 (RF1 on) 631 2 4 50 RFC-RF2 RFC-RF1 RFC-RF3 (RF2 on) DC blocking capacitors = 8 pF Vcont (H) = 1.8 - 3.0 V Return Loss (RFC) RL (dB) Frequency f (GHz) RETURN LOSS (RFC) vs. FREQUENCY RF2 on RF1 on RF3 on –50 –10 –15 –20 –25 –30 –35 –40 –45 631 2 4 50 DC blocking capacitors = 8 pF Vcont (H) = 1.8 - 3.0 V Return Loss (RFC) RL (dB) Frequency f (GHz) RETURN LOSS (RFC) vs. FREQUENCY RF2 on RF1 on RF3 on Remark The graphs indicate nominal characteristics. A Business Par tner of Renesas Electronics Corporation.

μPG2430T6Z 31 fo 7 egaP 00.1.veR 0010JE0300SD90R Oct 24, 2011 –50 –10 –15 –20 –25 –30 –35 –40 –45 631 2 4 50 DC blocking capacitors = 56 pF Vcont (H) = 1.8 - 3.0 V RF2 on RF1 on RF3 on Return Loss (RF1, 2, 3) RL1, 2, 3 (dB) Frequency f (GHz) RETURN LOSS (RF1, 2, 3) vs. FREQUENCY Return Loss (RF1, 2, 3) RL1, 2, 3 (dB) Frequency f (GHz) RETURN LOSS (RF1, 2, 3) vs. FREQUENCY –50 –10 –15 –20 –25 –30 –35 –40 –45 631 2 4 50 DC blocking capacitors = 8 pF Vcont (H) = 1.8 - 3.0 V RF2 on RF1 on RF3 on Insertion Loss Lins (dB) Switch Control Voltage (H) Vcont (H) (V) RFC-RF1/RF2/RF3 INSERTION LOSS vs. SWITCH CONTROL VOLTAGE (H) 3 42 2.5 3.51 1.5 –0.4 –1.2 –0.2 –0.6 –0.8

6 GHz

f = 2.5 GHz f = 2.5 GHz f = 6.0 GHz Isolation ISL (dB) Switch Control Voltage (H) Vcont (H) (V) RFC-RF1/RF2/RF3 ISOLATION vs. SWITCH CONTROL VOLTAGE (H) –50 –10 –15 –20 –25 –30 –35 –40 –45 2.5 41.5 2 3 3.51 RFC-RF3 (RF1 on) RFC-RF2 RFC-RF1 / RF3 (RF2 on) Isolation ISL (dB) Switch Control Voltage (H) Vcont (H) (V) RFC-RF1/RF2/RF3 ISOLATION vs. SWITCH CONTROL VOLTAGE (H) –50 –10 –15 –20 –25 –30 –35 –40 –45 2.5 41.5 2 3 3.51 RFC-RF2 RFC-RF1 RFC-RF3 (RF1 on) RFC-RF3 (RF2 on) Remark The graphs indicate nominal characteristics. A Business Par tner of Renesas Electronics Corporation.

μPG2430T6Z 31 fo 8 egaP 00.1.veR 0010JE0300SD90R Oct 24, 2011 Return Loss (RFC) RL (dB) RETURN LOSS (RFC) vs. SWITCH CONTROL VOLTAGE (H) Switch Control Voltage (H) Vcont (H) (V) Return Loss (RFC) RL (dB) RETURN LOSS (RFC) vs. SWITCH CONTROL VOLTAGE (H) Switch Control Voltage (H) Vcont (H) (V) f = 2.5 GHz –50 –10 –15 –20 –25 –30 –35 –40 –45 2.5 41.5 2 3 3.51 RF1 on RF2 on RF3 on Switch Control Voltage (H) Vcont (H) (V) f = 2.5 GHz –50 –10 –15 –20 –25 –30 –35 –40 –45 2.5 41.5 2 3 3.51 RF1 on RF2 on RF3 on f = 6.0 GHz –50 –10 –15 –20 –25 –30 –35 –40 –45 2.5 41.5 2 3 3.51 RF1 on RF2 on RF3 on Return Loss (RF1, 2, 3) RL1, 2, 3 (dB) RETURN LOSS (RF1, 2, 3) vs. SWITCH CONTROL VOLTAGE (H) Switch Control Voltage (H) Vcont (H) (V) Switch Control Voltage (H) Vcont (H) (V) f = 6.0 GHz –50 –10 –15 –20 –25 –30 –35 –40 –45 2.5 41.5 2 3 3.51 RF1 on RF2 on RF3 on Return Loss (RF1, 2, 3) RL1, 2, 3 (dB) RETURN LOSS (RF1, 2, 3) vs. SWITCH CONTROL VOLTAGE (H) Switch Control Voltage (H) Vcont (H) (V) Insertion Loss Lins (dB) Input Power Pin (dBm) RFC-RF1/RF2/RF3 INSERTION LOSS, Icont vs. INPUT POWER –0.5 –1.5 –2.5 –3 25 3520 3015 Vcont (H) = 3.0 V 1.8 V 0.6 0.5 0.4 0.3 0.2 0.1 Switch Control Current Icont ( A)μ f = 2.5 GHz 3.0 V 1.8 V Lins Icont Insertion Loss Lins (dB) Input Power Pin (dBm) RFC-RF1/RF2/RF3 INSERTION LOSS, Icont vs. INPUT POWER –0.5 –1.5 –2.5 –3 25 3520 3015 1.8 V 0.6 0.5 0.4 0.3 0.2 0.1 Switch Control Current Icont ( A)μ f = 6.0 GHz 3.0 V 1.8 V Lins Icont Vcont (H) = 3.0 V Remark The graphs indicate nominal characteristics. A Business Par tner of Renesas Electronics Corporation.

μPG2430T6Z 31 fo 9 egaP 00.1.veR 0010JE0300SD90R Oct 24, 2011 1 dB Loss Compression Input Power Pin (1 dB) (dBm) 0.1 dB Loss Compression Input Power Pin (0.1 dB) (dBm) Switch Control Voltage (H) Vcont (H) (V) RFC-RF1/RF2/RF3 Pin (1 dB), Pin (0.1 dB) vs. SWITCH CONTROL VOLTAGE (H) f = 2.5 GHz 2.5 41.5 2 3 3.51 Pin (1 dB) Pin (0.1 dB) 1 dB Loss Compression Input Power Pin (1 dB) (dBm) 0.1 dB Loss Compression Input Power Pin (0.1 dB) (dBm) Switch Control Voltage (H) Vcont (H) (V) RFC-RF1/RF2/RF3 Pin (1 dB), Pin (0.1 dB) vs. SWITCH CONTROL VOLTAGE (H) f = 6.0 GHz 2.5 41.5 2 3 3.51 Pin (1 dB) Pin (0.1 dB) Remark The graphs indicate nominal characteristics. A Business Par tner of Renesas Electronics Corporation.

μPG2430T6Z 31 fo 01 egaP 00.1.veR 0010JE0300SD90R Oct 24, 2011 MOUNTING PAD LAYOUT DIMENSIONS 8-PIN PLASTIC TSON (UNIT: mm) 0.7 1.2 8-0.15 1.1 1.7 0.4 Remark The mounting pad layout in this document is for reference only. When designing PCB, please consider workability of mounting, solder joint reliability, prevention of solder bridge and so on, in order to optimize the design. A Business Par tner of Renesas Electronics Corporation.

μPG2430T6Z 31 fo 11 egaP 00.1.veR 0010JE0300SD90R Oct 24, 2011 PACKAGE DIMENSIONS 8-PIN PLASTIC TSON (UNIT: mm) A A 0.7±0.1 (Bottom View)(Top View) 1.5±0.1 1.5±0.1 0.37+0.03 –0.05 0.08 MIN. 0.15+0.07 –0.05 0.3±0.07 (0.24) (Side View) 0.4±0.06 0.2±0.1 1.2±0.1 (C0.15) Remark A > 0 ( ): Reference value A Business Par tner of Renesas Electronics Corporation.

μPG2430T6Z 31 fo 21 egaP 00.1.veR 0010JE0300SD90R Oct 24, 2011 RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office. lobmyS noitidnoC snoitidnoC gniredloS dohteM gniredloS Infrared Reflow Peak temperature (package surface temperature) : 260°C or below ssel ro sdnoces 01 : erutarepmet kaep ta emiT Time at temperature of 220°C or higher : 60 seconds or less Preheating time at 120 to 180°C : 120±30 seconds Maximum number of reflow processes : 3 times Maximum chlorine content of rosin flux (% mass) : 0.2% (Wt.) or below IR260 Partial Heating Peak temperature (terminal temperature) : 350°C or below Soldering time (per side of device) : 3 seconds or less Maximum chlorine content of rosin flux (% mass) : 0.2% (Wt.) or below HS350 CAUTION Do not use different soldering methods together (except for partial heating). A Business Par tner of Renesas Electronics Corporation.

μPG2430T6Z 31 fo 31 egaP 00.1.veR 0010JE0300SD90R Oct 24, 2011 Caution GaAs Products This product uses gallium arsenide (GaAs). GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points.

• Follow related laws and ordinances when disposing of the product. If there are no applicable laws and/or ordinances, dispose of the product as recommended below. 1. Commission a disposal company able to (with a license to) collect, transport and dispose of materials that contain arsenic and other such industrial waste materials. 2. Exclude the product from general industrial waste and household garbage, and ensure that the product is controlled (as industrial waste subject to special control) up until final disposal.
• Do not burn, destroy, cut, crush, or chemically dissolve the product.
• Do not lick the product or in any way allow it to enter the mouth. A Business Par tner of Renesas Electronics Corporation.

All trademarks and registered trademarks are the property of their respective owners. C - 1 Revision History μPG2430T6Z Data Sheet Rev. Date Page Summary

1.00 Oct 24, 2011 - First edition issued

Bluetooth is a registered trademark owned by Bluetooth SIG, Inc., U.S.A.