PG106

PG101 DSK | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 2

Technical content

FEATURES

Case:JEDEC DO-41,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.012 ounces,0.34 grams Mounting position: Any MA XIMUM RATINGS A ND ELECTRICA L CHA RA CTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. PG 103 PG 104 PG 105 PG 106 PG 107 PG

108 UNITS

Maximum recurrent peak reverse voltage V RRM 300 400 500 600 800 1000 V Max imum RMS v oltage V RMS 210 280 350 420 560 700 V Maximum DC blocking voltage V DC 300 400 500 600 800 1000 V Maximum average forw ard rectified current 9.5mm lead length, @T A =75 Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @T J =125 Maximum instantaneous forw ard voltage @ 1.0 A V F V Maximum reverse current @T A =25 at rated DC blocking voltage @T A =125 M axim um reverse recovery tim e (N ote1) t rr ns Typical junction capacitance (Note2) C J pF Typical thermal resistance (Note3) R θJA Operating junction temperature range T J Storage temperature range T STG NOTE:1. Measured with I F =0.5A, I R =1A, I rr =0.25A. PG101---PG108 DO - 41 100 100 PG 101 Easily cleaned with Freon,Alcohol,Isopropanol 200 140 3. Thermal resistance f rom junction to ambient. A 2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC. I R 100.0 - 55---- + 175 150 250 500 - 55---- +175 A I FSM FAST RECOVERY RECTIFIERS I F(AV) The plastic material carries U/L recognition 94V-0 VOLTAGE RANGE: 100 --- 1000 V CURRENT: 1.0 A 200 PG 102 A1.0 30.0 1.3 5.0 Dimensions in millimeters www.diode.kr Diode Semiconductor Korea

TJ=25 f=1MHz .4 1.0 2 41 0 2 0 4 0 1 0 0 0.6 T J =25 Pulse Width=300 µ S 0.4 0.01 0.02 0.06 0.1 0.2 1.0 100 41 0 2 0 10040 T J =125 8.3ms Single Half Sine-Wave Single Phase Half Wave 60H Z Resistive or Inductive Load 0.25 0.5 0.75 1.0 1.5 1.25 100 125 175 150 PULSE GENERATOR (NOTE2) D.U.T. N.1. N.1. OSCILLOSCOPE (NOTE 1) (+) 50VDC (APPROX) (-) N.1. (-) (+) -1.0A -0.25A +0.5A t rr 1cm AMPERES AMPERES AMPERES JUNCTION CAPACITANCE,pF PEAK FORWARD SURGE CURRENT INSTANTANEOUS FORWARD CURRENT PG101---PG108 SE T TIM E BASE FOR 50/100 ns /cm AMBIENT T EMPERAT URE, NUMBER OF CYCLES AT 60 Hz N OTE S:1.R ISE TIM E =75ns M AX. IN P U T IM P E D AN C E =1M .22pF FIG.1 -- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM FIG.2 --FORWARD CURRENT DERATING CURVE INST ANT ANEOUS FORWARD VOLT AGE,VOLT S REVERSE VOLT AGE,VOLT S FIG.4-- TYPICAL FORWARD CHARACTERISTICS FIG.5-- TYPICAL JUNCTION CAPACITANCE 2.R ISE TIM E =10ns M AX. SOU R C E IM P E D AN C E =5O AVERAGE FORWARD CURRENT FIG.3 --PEAK FORWARD SURGE CURRENT www.diode.kr Diode Semiconductor Korea