PG05FBESC_15 KEC | Alldatasheet
Document overview
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Technical content
- 3. 31 1/2 SEMICONDUCTOR TECHNICAL DATA PG05FBESC TVS Diode for ESD Protection in Portable Electronics Revision No : 4 Protection in Portable Electronics Applications.
FEATURES
h50 Watts peak pulse power (tp=8/20Ǻs) hTransient protection for data lines to IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact) IEC 61000-4-4(EFT) 40A(tp=5/50ns) IEC 61000-4-5(Lightning) 5A(tp=8/20 Ǻs) hBidirectional Type Pin Configuration Structure. hSmall package for use in portable electronics. hSuitable replacement for Multi-Layer Varistors in ESD protection applications. hProtects one I/O or power line. hLow clamping voltage. hLow leakage current.
APPLICATIONS
hCell phone handsets and accessories. hMicroprocessor based equipment. hPersonal digital assistants (PDA s) hNotebooks, desktops, & servers. hPortable instrumentation. hPagers peripherals. MAXIMUM RATING (Ta=25) ELECTRICAL CHARACTERISTICS (Ta=25) CHARACTERISTIC SYMBOL RATING UNIT Peak Pulse Power (tp=8/20Ǻs) PPK 50 W Junction Temperature Tj -55q150 Storage Temperature Tstg -55q150 CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Reverse Stand-Off Voltage VRWM - - - 5 V Reverse Breakdown Voltage VBR It=1mA 5.8 - 7.8 V Reverse Leakage Current IR VRWM=5V - - 5 ǺA Junction Capacitance CJ VR=0V, f=1MHz - - 60 pF
- 3. 31 2/2 PG05FBESC Revision No : 4