PG05DBTFC KEC | Alldatasheet

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Technical content

  1. 6. 24 1/1 SEMICONDUCTOR TECHNICAL DATA PG05DBTFC TVS Diode for ESD Protection in Portable Electronics Revision No : 2 Protection in Portable Electronics Applications.

FEATURES

50 Watts peak pulse power (tp=8/20

Transient protection for data lines to IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact) IEC 61000-4-4(EFT) 40A(tp=5/50ns) IEC 61000-4-5(Lightning) 5A(tp=8/20 Bidirectional Type Pin Configuration Structure. Small package for use in portable electronics. Suitable replacement for Multi-Layer Varistors in ESD protection applications. Protects one I/O or power line. Low clamping voltage. Low leakage current.

APPLICATIONS

Cell phone handsets and accessories. Microprocessor based equipment. Personal digital assistants (PDA’s) Notebooks, desktops, & servers. Portable instrumentation. Pagers peripherals. MAXIMUM RATING (Ta=25 TFSC DIM MILLIMETERS A B C D E 1.00 0.05 0.80+0.10/-0.05 0.60 0.05 0.30 0.05

0.40 MAX

C D B A E F 0.13 0.05F 1. ANODE 2. ANODE ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC SYMBOL RATING UNIT Peak Pulse Power (tp=8/20 s) PPK 50 Junction Temperature Tj -55 150 Storage Temperature Tstg -55 150 CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Reverse Stand-Off Voltage VRWM - - - 5 V Reverse Breakdown Voltage VBR It=1mA 5.8 - 7.8 V Reverse Leakage Current IR VRWM=3V - - 70 nA VRWM=5V - - 5 A Junction Capacitance CJ VR=0V, f=1MHz - 15 - pF Marking

  1. 6. 24 2/2 PG05DBTFC Revision No : 2 NON-REPETITIVE PEAK PULSE POWER VS. PULSE TIME PULSE DURATION TP (µs) 11 0 PPPEAK PULSE POWER P (KW) 100 100 Peak Pulse Power 8/20us Average Power Waveform Parameters : tr=8µs e -t td=20µs td=lpp/2 RATED POWER OR I (%) PP 110 50250 AMBIENT TEMPERATURE Ta ( C) POWER DERATION CURVE 75 100 125 150 100 PEAK PULSE CURRENT I (%) PP 110 1050 TIME (µs) PULSE WAVEFORM 15 20 25 30 100