PG05BAUSM KEC | Alldatasheet
Document overview
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Technical content
- 9. 10 1/2 SEMICONDUCTOR TECHNICAL DATA PG05BAUSM TVS Diode for ESD Protection in Portable Electronics Revision No : 2 Protection in Portable Electronics Applications.
FEATURES
Transient protection for data lines to IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact) Small package for use in portable electronics. Suitable replacement for Multi-Layer Varistors in ESD protection applications. Protects one I/O or power line. Low clamping voltage. Low leakage current.
APPLICATIONS
Cell phone handsets and accessories. Microprocessor based equipment. Personal digital assistants (PDA s) Notebooks, desktops, & servers. Portable instrumentation. Pagers peripherals. MAXIMUM RATING (Ta=25 DIM MILLIMETERS A B D E USM 2.00 0.20 1.25 0.15 0.90 0.10 0.3+0.10/-0.05 2.10 0.20 0.65 0.15+0.1/-0.06 1.30 0.00~0.10 0.70 C G H J K L K 1 3 E B D A J G C L H MM N N M 0.42 N 0.10 MIN 1. (TVS) D1 CATHODE 2. (TVS) D2 CATHODE 3. COMMON ANODE ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC SYMBOL RATING UNIT Total Power Dissipation PPK 200 mW Junction Temperature Tj 150 Storage Temperature Tstg -55 150 CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Reverse Stand-Off Voltage VRWM - - - 5 V Reverse Breakdown Voltage VBR It=5mA 6.46 - 7.14 V Reverse Leakage Current IR VRWM=5V - - 0.5 A Junction Capacitance CJ VR=0V, f=1MHz - 3 - pF Type Name Marking BA D2 D1
- 9. 10 2/2 PG05BAUSM Revision No : 2 NON-REPETITIVE PEAK PULSE POWER VS. PULSE TIME PULSE DURATION tP (µs) 1 100 10 PEAK PULSE POWER PPP (W) 100 Peak Pulse Power 8/20us Average Power Waveform Parameters : tr=8µs e-t td=20µs td=lpp/2 RATED POWER OR IPP (%) 110 50250 POWER DERATION CURVE 75 100 125 150 100 AMBIENT TEMPERATURE Ta ( C) PEAK PULSE CURRENT IPP (%) 110 1050 TIME (µs) PULSE WAVEFORM 15 20 25 30 100 CAPACITANCE CJ (pF) 210 REVERSE VOLTAGE VR (V) CJ - VR 345