PG03FSESC_15 KEC | Alldatasheet

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Technical content

  1. 11. 6 1/2 SEMICONDUCTOR TECHNICAL DATA PG03FSESC Single Line TVS Diode for ESD Protection in Portable Electronics Revision No : 2 Protection in Portable Electronics Applications.

FEATURES

50 Watts peak pulse power (tp=8/20

Transient protection for data lines to IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact) IEC 61000-4-4(EFT) 40A(tp=5/50ns) IEC 61000-4-5(Lightning) 5A(tp=8/20 Small package for use in portable electronics. Suitable replacement for Multi-Layer Varistors in ESD protection applications. (* Multi-Layer Varistors [0402 Size]) Protects on I/O or power line. Low clamping voltage. Low leakage current.

APPLICATIONS

Cell phone handsets and accessories. Microprocessor based equipment. Personal digital assistants (PDA’s) Notebooks, desktops, & servers. Portable instrumentation. Pagers peripherals. MAXIMUM RATING (Ta=25 ESC DIM MILLIMETERS A B C D E 1.60 0.10 1.20 0.10 0.80 0.10 0.30 0.05 0.60 0.10 CATHODE MARK D C B A E 1. ANODE 2. CATHODE F 0.13 0.05F ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC SYMBOL RATING UNIT Peak Pulse Power (tp=8/20 s) PPK 50 W Peak Pulse Current (tp=8/20 s) IPP 5 A Operating Temperature Tj -55 150 Storage Temperature Tstg -55 150 CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Reverse Stand-Off Voltage VRWM - - - 3.3 V Reverse Breakdown Voltage VBR It=1mA 4.0 - - V Reverse Leakage Current IR VRWM=3.3V - - 20 A Clamping Voltage VC IPP=5A, tp=8/20 s - - 10.9 V Junction Capacitance CJ VR=0V, f=1MHz - - 100 pF Marking CATHODE MARK

  1. 11. 6 2/2 PG03FSESC Revision No : 2 CAPACITANCE C (pF) J REVERSE VOLTAGE V (VOLTS) C - VR Peak Pulse Power 8/20us Average Power Waveform Parameters : tr=8µs e -t td=20µs td=lpp/2 R J 100 RATED POWER OR I (%) PP 110 50250 AMBIENT TEMPERATURE Ta ( C) POWER DERATION CURVE 75 100 125 150 100 PEAK PULSE CURRENT I (%) PP 110 1050 TIME (µs) PULSE WAVEFORM 15 20 25 30 100 NON-REPETITIVE PEAK PULSE POWER VS. PULSE TIME PULSE DURATION TP (µs) 11 0 PPPEAK PULSE POWER P (W) 100 100