PFR850S STMICROELECTRONICS | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
PFR 850S → 856S FAST RECOVERY RECTIFIER DIODES PRELIMINARY DATASHEET LOW FORWARD VOLTAGE DROP HIGH SURGE CURRENT CAP ABILITY
APPLICATIONS
AC-DC POWER SUPPLIES AND CONVER- TERS FREE WHEELING DIODES, etc.
DESCRIPTION
Their high efficiency and high reliability combined with small size and low cost make these fast reco- very rectifier diodes very attractive components for many demanding applications. August 1996 - Ed: 1 DO-201AD (Plastic) Symbol Parameter Value Unit IFRM Repetitive Peak Forward Current tp ≤ 20µs 100 A IF (AV) Average Forward Current* T a = 90°C δ = 0.5 IFSM Surge non Repetitive Forward Current t p = 10ms Sinusoidal 100 A Ptot Power Dissipation* Ta = 90°C 3.5 W Tstg Tj Storage and Junction T emperature Range - 40 to + 175 - 40 to + 175 TL Maximum Lead T emperature for Soldering during 10s at 4mm from case 230 °C ABSOLUTE MAXIMUM RATINGS (limiting values) Symbol Parameter Value Unit R th (j - a) Junction-ambient* 25 °C/W THERMAL RESISTANCE Symbol Parameter PFR Unit 850S 851S 852S 854S 856S VRRM Repetitive Peak Reverse Voltage 50 100 200 400 600 V VRSM Non Repetitive Peak Reverse Voltage 75 150 250 450 650 V * On infinite heatsink with 10mm lead length.
Synbol Test Conditions Min. Typ. Max. Unit IR Tj = 25°C VR = VRRM 10 µA Tj = 100°C 250 VF Tj = 25°C IF = 3A 1.25 V ST A TIC CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit trr Tj = 25°C I F = 1A PRF 850S → 854S 150 ns VR = 30V di F/dt = - 25A/µs PRF 856S 200 IRM Tj = 25°C I F = 1A 2A VR = 30V di F/dt = - 25A/µs RECOVERY CHARACTERISTICS PFR 850S → 856S
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. © 1996 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMP ANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - T aiwan - Thailand - United Kingdom - U.S.A. PACKAGE MECHANICAL DATA DO-201AD BA E E ØD ØD ØCB note 2 note 1note 1 REF. DIMENSIONS NOTES Millimeters Inches Min. Max. Min. Max. A 9.50 0.374 1 - The lead diameter ∅ D is not controlled over zone E 2 - The minimum axial lengh within which the device may be placed with its leads bent at right angles is 0.59"(15 mm) B 25.40 1.000 ∅ C 5.30 0.209 ∅ D 1.30 0.051 E 1.25 0.049 Weight : 1 g Marking : T ype number White band indicates cathode cooling method : by convertion (method A) Date code PFR 850S → 856S