PF5103

PF5103 FAIRCHILD | Alldatasheet

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• This device is designed for low level analog switching sample and hold circuits and chopper stabilized amplifiers.
• Sourced from process 51. Absolute Maximum Ratings * Ta = 25°C unless otherwise noted * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150°C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics* * Minimum land pad. Electrical Characteristics TC = 25°C unless otherwise noted Off Characteristics On Characteristics Small Signal Characteristics * Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0% Symbol Parameter Value Units VDG Drain-Gate Voltage 40 V VGS Gate-Source Voltage -40 V IGF Forward Gate Current 50 mA TJ, TSTG Operating and Storage Junction Temperature Range -55 ~ 150 °C Symbol Parameter Value Units PD Total Device Dissipation Derate above 25°C 625 5.0 mW mW/°C RθJC Thermal Resistance, Junction to Case 125 °C/W RθJA Thermal Resistance, Junction to Ambient 357 °C/W Symbol Parameter Test Condition MIN MAX Units V(BR)GSS Gate-Source Breakdwon Voltage IG = -1.0µA, VDS = 0 -40 V IGSS Gate Reverse Current VGS = -15V, VDS = 0 VGS = -15V, VDS = 0, Ta = 125oC -200 -500 pA nA VGS(off) Gate-Source Cutoff Voltage VDS = 15V, ID = 1.0nA -1.2 -2.7 V VGS(f) Gate-Source Forward Voltage VDS = 0V, IG = 10mA 1.0 V IDSS Zero-Gate Voltage Drain Current * VDS = 15V, VGS = 0 10 40 mA gfs Forward Transfer conductance VDG = 15V, ID = 500uA, f = 1.0KHz VDG = 15V, ID = 2.0mA, f = 1.0KHz 3500 7500 µmhos µmhos goss Output Conductance VDG = 15V, ID = 500uA, f = 1.0KHz 25 µmhos Ciss Input Capacitance VDG = 15V, VGS = 0V, f = 1.0MHz 16 pF Crss Reverse Transfer Capacitance VDG = 15V, VGS = 0V, f = 1.0MHz 6 pF 1. Drain 2. Source 3. Gate 1 2 3 TO-92 Marking : PF5103

2 www.fairchildsemi.com PF5103 Rev. A PF5103 N-Channel Switch Typical Characteristics r - DRAIN "ON" RESISTANCE (Ω) Parameter Interactions 0.5 1 2 5 10 100 100 V - GATE CUTOFF VOLTAGE (V) g - TRANSCONDUCTANCE (mmhos) GS (OFF) fs I , g @ V = 15V, V = 0 PULSED r @ 1.0 mA, V = 0 V @ V = 15V, I = 1.0 nA GS(off) DSS r DI DSS DS DS GS DS DS GS fs DS DS g fs Common Drain-Source 0 0.4 0.8 1.2 1.6 2 V - DRAIN-SOURCE VOLTAGE (V) I - DRAIN CURRENT (mA) DS D - 0.4 V - 1.0 V - 0.8 V - 0.2 V - 0.6 V V = 0 VGS T = 25°C TYP V = - 2.0 VGS(off) A - 1.2 V- 1.4 V Transfer Characteristics -3-2-10 V - GATE-SOURCE VOLTAGE (V) I - DRAIN CURRENT (mA) GS D V = - 3.0 VGS(off) 25°C V = 15 VDS V = - 2.0 VGS(off) 125°C - 55°C 25°C - 55°C 125°C Transfer Characteristics -1.5-1-0.50 V - GATE-SOURCE VOLTAGE (V) I - DRAIN CURRENT (mA) GS D V = - 1.6 VGS(off) 25°C V = 15 VDS V = - 1.1 VGS(off) 125°C - 55°C 25°C - 55°C 125°C Transfer Characteristics -3-2-10 V - GATE-SOURCE VOLTAGE (V) g - TRANSCONDUCTANCE (mmhos) GS fs V = - 3.0 VGS(off) 25°C V = 15 VDS V = - 2.0 VGS(off) 125°C - 55°C 25°C 125°C - 55°C Transfer Characteristics -1.5-1-0.50 V - GATE-SOURCE VOLTAGE (V) g - TRANSCONDUCTANCE (mmhos) GS fs V = - 1.6 VGS(off) 25°C V = 15 VDS V = - 1.1 VGS(off) 125°C - 55°C 25°C 125°C - 55°C

3 www.fairchildsemi.com PF5103 Rev. A PF5103 N-Channel Switch Typical Characteristics(continued) Output Conductance vs Drain Current 0.01 0.1 10 0.1 100 I - DRAIN CURRENT (mA) g - OUTPUT CONDUCTANCE ( mhos)D os V = - 5.0VGS(off) T = 25°C f = 1.0 kHz V = 5.0VDG µ A 10V 15V 20V 5.0V V = - 2.0VGS(off) V = - 0.85VGS(off) 10V 15V 20V 10V 15V 20V 5.0V Transconductance vs Drain Current 0.1 1 10 100 I - DRAIN CURRENT (mA) g - TRANSCONDUCTANCE (mmhos) D fs V = - 1.4VGS(off) T = 25°C V = 15V f = 1.0 kHz A DG V = - 3.0VGS(off) Capacitance vs Voltage -20-16-12-8-40 100 V - GATE-SOURCE VOLTAGE (V) C (C ) - CAPACITANCE (pF)rs GS is C (V = 0)is DS C (V = 20)is DS C (V = 0)rs DS f = 0.1 - 1.0 MHz Noise Voltage vs Frequency 0.01 1 10 100 100 f - FREQUENCY (kHz) e - NOISE VOLTAGE (nV / Hz)n V = 15V BW = 6.0 Hz @ f = 10 Hz, 100 Hz = 0.21 @ f ≥ 1.0 kHz DG I = 10 mAD I = 1.0 mAD Noise Voltage vs Current 0.01 0.1 1 10 100 I - DRAIN CURRENT (mA) e - NOISE VOLTAGE (nV / Hz)n V = 15VDG D f = 10 Hz f = 100 Hz f = 1.0 kHz f = 10 kHz f = 100 kHz Power Dissipation vs Ambient Temperature 02 5 5 0 7 5 1 0 0 1 2 5 1 5 0 100 200 300 400 500 600 700 TEMPERATURE ( C) P - POWER DISSIPATION (mW) D o TO-92 SOT-23 0 25 50 75 100 125 150 175 200 400 600 800 Power Dissipation vs Ambient Temperature Pd, Power Dissipation,[mW] Temperature, T C[ o

4 www.fairchildsemi.com PF5103 Rev. A PF5103 N-Channel Switch Typical Characteristics(continued) On Resistance vs Drain Current 12 5 1 0 2 0 5 0 1 0 0 100 I - DRAIN CURRENT (mA) r - DRAIN "ON" RESISTANCE D DS V TYP = - 7.0V GS(off) 25°C (Ω) 125°C 25°C 125°C r @ V = 0GS - 55°C DS V TYP = - 2.0V GS(off) - 55°C Normalized Drain Resistance vs Bias Voltage 0 0.2 0.4 0.6 0.8 1 100 V /V - NORMALIZED GATE-SOURCE VOLTAGE (V)r - NORMALIZED RESISTANCE GS DS r = DS V @ 5.0V, 10 µAGS(off) r DS VGS(off) VGS1 - GS(off) Switching Turn-On Time vs Gate-Source Voltage -10-8-6-4-20 V - GATE-SOURCE CUTOFF VOLTAGE (V) t ,t - TURN-ON TIME (ns)r(ON) GS(off) d(ON) V = 3.0V t APPROX. I INDEPENDENT DD Dr V = 3.0V T = 25°C GS(off) A I = 6.6 mA V = -12V D GS t r (ON) t d (ON)2.5 mA - 6.0V Switching Turn-Off Time vs Drain Current 02468 1 0 100 I - DRAIN CURRENT (mA) t ,t - TURN-OFF TIME (ns) D d(OFF) OFF T = 25°C V = 3.0V V = -12V t DEVICE V INDEPENDENTGS(off) A DD GS d(off) V = -2.2V GS(off) - 4.0V - 7.5V t d(off) t (off)

5 www.fairchildsemi.com PF5103 Rev. A PF5103 N-Channel Switch Package Dimensions Dimensions in Millimeters 0.46 ±0.10 1.27TYP (R2.29) 3.86MAX [1.27 ±0.20] 1.27TYP [1.27 ±0.20] 3.60 ±0.20 14.47 ±0.40 1.02 ±0.10 (0.25) 4.58 ±0.20 4.58 +0.25 –0.15 0.38 +0.10 –0.05 0.38 +0.10 –0.05 TO-92

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. PF5103 N-Channel Switch DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGH T TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LI CENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPE- CIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in th e labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datas heet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. FACT Quiet Series™ GlobalOptoisolator™ GTO™ HiSeC™ I 2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ ScalarPump™ SILENT SWITCHER SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TCM™ TinyBoost™ TinyBuck™ TinyPWM™ TinyPower™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UltraFET UniFET™ VCX™ Wire™ ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E 2CMOS™ EnSigna™ FACT™ FAST FASTr™ FPS™ FRFET™ Across the board. Around the world.™ The Power Franchise Programmable Active Droop™ Rev. I20 6 www.fairchildsemi.com PF5103 Rev. A PF5103 N-Channel Switch