PF1010DF8 KEC | Alldatasheet

Document overview

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Technical content

  1. 8. 8 1/2 SEMICONDUCTOR TECHNICAL DATA PF1010DF8 Silicon Planar Type Diode Revision No : 2 For EMI Filtering and ESD Protection.

FEATURES

EMI/RFI filtering. ESD Protection to IEC 61000-4-2 Level 4. Low insertion loss. Good attenuation of high frequency signals. Low clamping voltage. Low operating and leakage current. Four elements in one package

APPLICATIONS

Cell phone handsets. RF communications equipment. MAXIMUM RATING (Ta=25 1 4 0.5 Top View Bottom View Side View DFN-8 MILLIMETERS CC E E F F I I G G H H H D D A B A B DIM 0.2 0.02+_ 0.23 0.05+_ 0.75 0.05+_ 0.35 0.05+_ 2.0 0.05+_ 2.0 0.05+_ 0.6 0.05+_ 1.2 0.05+_ GND PAD 1,8 : Filter channel 1 2,7 : Filter channel 2 3,6 : Filter channel 3 4,5 : Filter channel 4 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC SYMBOL RATING UNIT Power Dissipation PD 300 mW Operating Temperature Tj -55 150 Storage Temperature Tstg -55 150 GND 10pF 100Ω 10pF FILTERn*FILTERn* CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Reverse Stand-Off Voltage VRWM - - - 5 V Reverse Breakdown Voltage VBR It=1mA 6 - - V Reverse Leakage Current IR VRWM=3V - - 0.1 A Cutoff Frequency f3dB VR=0V, ZSOURCE=50 , ZLOAD=50 - 150 - MHz Attenuation Frequency f25dB VR=0V, ZSOURCE=50 , ZLOAD=50 800 - 3,000 MHz Resistance R Between Input and Output - 100 - Capacitance C VR=2.5V, Between I/O Pins and GND - 20 - pF EQUIVALENT CIRCUIT

  1. 8. 8 2/2 PF1010DF8 Revision No : 2 CJ - VR REVERSE VOLTAGE VR (V) 13 24 CAPACITANCE CJ (pF) S21 - f INSERTION LOSS (dB) -45 -10 1 10 100 1000 6000 FREQUENCY (MHz) -40 -35 -30 -25 -20 -15