PF1007UDF16 KEC | Alldatasheet

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Technical content

  1. 12. 27 1/2 SEMICONDUCTOR TECHNICAL DATA PF1007UDF16 EMI Filtering TVS Revision No : 0 EMI Filtering TVS For Data Line

FEATURES

EMI/RFI filtering. ESD Protection to IEC 61000-4-2 Level 4. Low insertion loss. Good attenuation of high frequency signals. Low clamping voltage. Low operating and leakage current. Eight elements in one package MAXIMUM RATING (Ta=25 1,16 : Filter channel 1 2,15 : Filter channel 2 3,14 : Filter channel 3 4,13 : Filter channel 4 5,12 : Filter channel 5 6,11 : Filter channel 6 7,10 : Filter channel 7 8,9 : Filter channel 8 UDFN-16 MILLIMETERSDIM 3.50 2.80 0.10+_ J TOP VIEW SIDE VIEW BOTTOM VIEW A C H G K L J D E F A B 1.20 0.40 0.125 0.03+0.02/-0.03

0.20 Min

0.50 0.05+_ 0.30 0.10+_ 0.20 0.05+_ 0.25 0.05+_ GND PAD C GH D E18 16 9 Pin 1 F B LK ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC SYMBOL RATING UNIT DC Power Per Resistor PR 100 mW Power Dissipation *PD 800 Junction Temperature Tj 150 Storage Temperature Tstg -55 150 7.5pF 7.5pF 100ΩFILTERn* FILTERn* GND CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Reverse Stand-Off Voltage VRWM - - - 5 V Reverse Breakdown Voltage VBR It=1mA 6 - - V Reverse Leakage Current IR VRWM=3.3V - - 1 A Cutoff Frequency f3dB VR=0V, ZSOURCE=50 , ZLOAD=50 - 200 - MHz Resistance R Between Input and Output - 100 - Capacitance C2.5V VR=2.5V, Between I/O Pins and GND - 15 - pF EQUIVALENT CIRCUIT * Total Package Power Dissipation Type Name Lot No. MARKING

  1. 12. 27 2/2 PF1007UDF16 Revision No : 0 REVERSE VOLTAGE VR (V) 100 0.1 012345 REVERSE LEAKAGE CURRENT IR (nA) REVERSE VOLTAGE VR (V) 0.5 1.5 2.0 0.0 012345 1.0 NORMALIZED CAPACITANCE CJ - VR IR - VR S21 - F FREQUENCY (MHz) -20 -40 1 10 100 1000 6000 -30 -10 INSERTION LOSS (dB)