PF08109B

PF08109B RENESAS | Alldatasheet

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Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.com Renesas Technology Corp. Customer Support Dept. April 1, 2003 To all our customers

Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corporation product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corporation or a third party. 2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corporation by various means, including the Renesas Technology Corporation Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corporation for further details on these materials or the products contained therein.

MOS FET Power Amplifier Module for E-GSM and DCS1800 Dual Band Handy Phone ADE-208-821C (Z) Rev.3 Feb. 2001 Application

• Dual band Amplifier for E-GSM (880 MHz to 915 MHz) and DCS1800 (1710 MHz to 1785 MHz)
• For 3.5 V nominal battery use

Features

• 2 in / 2 out dual band amplifire
• Simple external circuit including output matching circuit
• High gain 3stage amplifier : 0 dBm input Typ
• Lead less thin & Small package : 11 × 13.75 × 1.8 mm Typ
• High efficiency : 50% Typ at nominal output power for E-GSM 43% Typ at 32.7 dBm for DCS1800 Pin Arrangement 10: 11: 12: N/C N/C Pout DCS Vdd DCS Vdd GSM Pout GSM N/C Vtxlo Pin GSM Vapc GSM Vapc DCS Pin DCS GND
• RF-O-12 G 910G1112 7 56G G

Rev.3, Feb. 2001, page 2 of 23 Absolute Maximum Ratings (Tc = 25°C) Item Symbol Rating Unit Supply voltage Vdd 8 V Idd GSM 3ASupply current Idd DCS 2A Vtxlo voltage Vtxlo 4 V Vapc voltage Vapc 4 V Input power Pin 10 dBm Operating case temperature Tc (op) −30 to +100 °C Storage temperature Tstg −30 to +100 °C Pout GSM 5 WOutput power Pout DCS 3 W Note: The maximum ratings shall be valid over both the E-GSM-band (880 MHz to 915 MHz), and the DCS1800-band (1710 MHz to 1785 MHz). Electrical Characteristics for DC (Tc = 25°C) Item Symbol Min Typ Max Unit Test Condition Drain cutoff current Ids  100 µA Vdd = 8 V, Vapc = 0 V Vapc control current Iapc  3 mA Vapc =2.2 V Vtxlo control current Itxlo  100 µA Vtxlo = 2.4 V

Rev.3, Feb. 2001, page 3 of 23 Electrical Characteristics for E-GSM mode (Tc = 25°C) Test conditions unless otherwise noted: f = 880 to 915 MHz, Vdd GSM = 3.5 V, Pin GSM = 0 dBm, Rg = Rl = 50 Ω, Tc = 25°C, Vapc DCS = 0.1 V Pulse operation with pulse width 577 µs and duty cycle 1:8 shall be used. Item Symbol Min Typ Max Unit Test Condition Frequency range f 880  915 MHz Total efficiency (Hi) ηT(Hi) 41 50  % 2nd harmonic distortion 2nd H.D. − 45 −38 dBc 3rd harmonic distortion 3rd H.D. − 45 −40 dBc Input VSWR VSWR (in)  1.5 3  Pout GSM = 35.5dBm, Vtxlo = 0.1V, Vapc GSM = controlled Total efficiency (Lo) ηT(Lo) 27 35  % Pout GSM = 30.8dBm, Vtxlo = 2.4V, Vapc GSM = controlled Output power (1)(Hi) Pout (1)(Hi) 35.5 36.0  dBm Vapc GSM = 2.2V, Vtxlo = 0.1V Output power (1)(Lo) Pout (1)(Lo) 30.8 31.3  dBm Vapc GSM = 2.2V, Vtxlo = 2.4V Output power (2)(Hi) Pout (2)(Hi) 33.5 34.0  dBm Vdd GSM = 3.0V, Vapc GSM = 2.2V, Tc = +85°C, Vtxlo = 0.1V Output power (2)(Lo) Pout (2)(Lo) 28.8 29.3  dBm Vdd GSM = 3.0V, Vapc GSM = 2.2V, Tc = +85°C, Vtxlo = 2.4V Isolation  − 42 −36 dBm Vapc GSM = 0.2V, Vtxlo = 0.1V Isolation at DCS RF-output when GSM is active  − 23 −17 dBm Pout GSM = 35.5dBm, Vtxlo = 0.1V Measured at f = 1760 to 1830MHz Switching time t r, tf  12 µs Pout GSM = 0 to 35.5dBm, Vtxlo = 0.1V Stability  No parasitic oscillation  Vdd GSM = 3.0 to 5.1V, Pout GSM ≤ 35.5dBm, Vtxlo = 0.1, 2.4V, Vapc GSM ≤ 2.2V, GSMpulse. Rg = 50Ω, Output VSWR = 6 : 1 All phases Load VSWR tolerance  No degradation  Vdd GSM = 3.0 to 5.1V, t = 20sec., Pout GSM ≤ 35.5dBm, Vtxlo = 0.1, 2.4V, Vapc GSM ≤ 2.2V, GSM pulse. Rg = 50Ω, Output VSWR = 10 : 1 All phases

Rev.3, Feb. 2001, page 4 of 23 (Tc = 25°C) Test conditions unless otherwise noted: f = 1710 to 1785 MHz, Vdd DCS = 3.5 V, Pin DCS = 0 dBm, Rg = Rl = 50 Ω, Tc = 25°C, Vapc GSM =0.1 V Pulse operation with pulse width 577 µs and duty cycle 1:8 shall be used. Item Symbol Min Typ Max Unit Test Condition Frequency range f 1710  1785 MHz Total efficiency (Hi) ηT(Hi) 36 43  % 2nd harmonic distortion 2nd H.D. − 45 −38 dBc 3rd harmonic distortion 3rd H.D. − 45 −40 dBc Input VSWR VSWR (in)  1.5 3  Pout DCS = 32.7dBm, Vapc DCS = controlled Total efficiency (Lo) ηT(Lo) 17 25  % Pout DCS = 26.7dBm, Vapc DCS = controlled Output power (1) Pout (1) 32.7 33.2  dBm Vapc DCS = 2.2V, Output power (2) Pout (2) 30.7 31.2  dBm Vdd DCS = 3.0V, Vapc DCS = 2.2V, Tc = +85°C Isolation  − 42 −36 dBm Vapc DCS = 0.2V Isolation at GSM RF-output when DCS is active  − 10 0 dBm Pout DCS = 32.7dBm, Measured at f = 1710 to 1785MHz Switching time t r, tf  12 µs Pout DCS = 0 to 32.7dBm Stability  No parasitic oscillation  Vdd DCS = 3.0 to 5.1V, Pout DCS ≤ 32.7dBm, Vapc DCS ≤ 2.2V, DCS pulse. Rg = 50Ω, Output VSWR = 6 : 1 All phases Load VSWR tolerance  No degradation  Vdd DCS = 3.0 to 5.1V, Pout DCS ≤ 32.7dBm, t = 20sec., Vapc DCS ≤ 2.2V, DCS pulse. Rg = 50Ω, Output VSWR = 10 : 1 All phases

Rev.3, Feb. 2001, page 5 of 23 Characteristic Curves −60 −50 −40 −30 −20 −10 −60 −50 −40 −30 −20 −10 Pout (dBm) Eff (%) Pout (dBm) Eff (%) Vapc (V) Vapc (V) High mode, f = 880 MHz Low mode, f = 880 MHz f = 880 MHz, Vdd = 3.5 V, Vapc = control, Vtxlo = 0.1 V, Pin = 0 dBm, Tc = 25°C, Rg = Rl = 50 Ω f = 880 MHz, Vdd = 3.5 V, Vapc = control, Vtxlo = 2.4 V, Pin = 0 dBm, Tc = 25°C, Rg = Rl = 50 Ω Pout Pout Eff Eff

Rev.3, Feb. 2001, page 6 of 23 −60 −50 −40 −30 −20 −10 −60 −50 −40 −30 −20 −10 Pout (dBm) Eff (%) Pout (dBm) Eff (%) Vapc (V) Vapc (V) High mode, f = 915 MHz Low mode, f = 915 MHz f = 915 MHz, Vdd = 3.5 V, Vapc = control, Vtxlo = 0.1 V, Pin = 0 dBm, Tc = 25°C, Rg = Rl = 50 Ω f = 915 MHz, Vdd = 3.5 V, Vapc = control, Vtxlo = 2.4 V, Pin = 0 dBm, Tc = 25°C, Rg = Rl = 50 Ω Pout Pout Eff Eff

Rev.3, Feb. 2001, page 7 of 23 Pout (dBm) 800 840 880 920 960 1000 f (MHz) High mode Low mode High mode Low mode Eff (%) 800 840 880 920 960 1000 f (MHz) Vdd = 3.5 V, Vapc = 2.2 V, Pin = 0 dBm, Tc = 25°C, Rg = Rl = 50 Ω High mode: Vtxlo = 0.1 V Low mode: Vtxlo = 2.4 V Vdd = 3.5 V, Vapc = control, Pin = 0 dBm, Tc = 25°C, Rg = Rl = 50 Ω High mode: Pout = 35.5 dBm Vtxlo = 0.1 V Low mode: Pout = 30.8 dBm Vtxlo = 2.4 V

Rev.3, Feb. 2001, page 8 of 23 −6 −40 −22 4 6 Pin (dBm) −6 −40 −22 4 6 Pin (dBm) Pout (dBm) Pout (dBm) High mode Low mode Vdd = 3.5 V, Vapc = 2.2 V, Vtxlo = 0.1 V, Tc = 25°C, Rg = Rl = 50 Ω Vdd = 3.5 V, Vapc = 2.2 V, Vtxlo = 2.4 V, Tc = 25°C, Rg = Rl = 50 Ω f = 880 MHz f = 915 MHz f = 880 MHz f = 915 MHz

Rev.3, Feb. 2001, page 9 of 23 −6 −40 −22 4 6 Pin (dBm) Eff (%) High mode Pout = 35.5 dBm, Vdd = 3.5 V, Vapc = control, Vtxlo = 0.1 V, Tc = 25°C, Rg = Rl = 50 Ω f = 880 MHz f = 915 MHz f = 880 MHz f = 915 MHz −6 −40 −22 4 6 Pin (dBm) Eff (%) High mode Pout = 34.8 dBm, Vdd = 3.5 V, Vapc = control, Vtxlo = 0.1 V, Tc = 25°C, Rg = Rl = 50 Ω

Rev.3, Feb. 2001, page 10 of 23 f = 880 MHz f = 915 MHz Low mode −6 −40 −2 246 Pin (dBm) Eff (%) Pout = 30.8 dBm, Vdd = 3.5 V, Vapc = control, Vtxlo = 2.4 V, Tc = 25°C, Rg = Rl = 50 Ω

Rev.3, Feb. 2001, page 11 of 23 High mode High mode Low mode Low mode 26 28 30 32 36 34 38 Pout (dBm) −20 −10 0 10 30 20 40 Pout (dBm) Eff (%) Id (A) f = 880 MHz, Vdd = 3.5 V, Vapc = control, Pin = 0 dBm, Tc = 25°C, Rg = Rl = 50 Ω High mode: Vtxlo = 0.1 V Low mode: Vtxlo = 2.4 V f = 880 MHz, Vdd = 3.5 V, Vapc = control, Pin = 0 dBm, Tc = 25°C, Rg = Rl = 50 Ω High mode: Vtxlo = 0.1 V Low mode: Vtxlo = 2.4 V

Rev.3, Feb. 2001, page 12 of 23 High mode High mode Low mode Low mode 26 28 30 32 36 34 38 Pout (dBm) −20 −10 0 10 30 20 40 Pout (dBm) Eff (%) Id (A) f = 915 MHz, Vdd = 3.5 V, Vapc = control, Pin = 0 dBm, Tc = 25°C, Rg = Rl = 50 Ω High mode: Vtxlo = 0.1 V Low mode: Vtxlo = 2.4 V f = 915 MHz, Vdd = 3.5 V, Vapc = control, Pin = 0 dBm, Tc = 25°C, Rg = Rl = 50 Ω High mode: Vtxlo = 0.1 V Low mode: Vtxlo = 2.4 V

Rev.3, Feb. 2001, page 13 of 23 −50 −40 −30 −20 −10 Pout (dBm) −50 −40 −30 −20 −10 Pout (dBm) Eff (%) Eff (%) Vapc (V) Vapc (V) f = 1710 MHz f = 1785 MHz f = 1710 MHz, Vdd = 3.5 V, Vapc = control, Pin = 0 dBm, Tc = 25°C, Rg = Rl = 50 Ω f = 1785 MHz, Vdd = 3.5 V, Vapc = control, Pin = 0 dBm, Tc = 25°C, Rg = Rl = 50 Ω Pout Eff Pout Eff

Rev.3, Feb. 2001, page 14 of 23 Eff (%) 22 24 28 26 30 32 34 Pout (dBm) Vdd = 3.5 V, Vapc = control, Pin = 0 dBm, Tc = 25°C, Rg = Rl = 50 Ω f = 1785 MHz f = 1710 MHz

Rev.3, Feb. 2001, page 15 of 23 1600 1650 1700 1800 1750 1850 1900 f (MHz) Pout (dBm) Eff (%) 1600 1650 1700 1800 1750 1850 1900 f (MHz) Vdd = 3.5 V, Vapc = 2.2 V, Pin = 0 dBm, Tc = 25°C, Rg = Rl = 50 Ω Vdd = 3.5 V, Vapc = control, Pin = 0 dBm, Tc = 25°C, Rg = Rl = 50 Ω Pout = 32.7 dBm Pout = 26.7 dBm

Rev.3, Feb. 2001, page 16 of 23 −6 −40 −22 4 6 Pin (dBm) Pout (dBm) −6 −40 −2 246 Pin (dBm) Eff (%) Vdd = 3.5 V, Vapc = 2.2 V, Pin = 0 dBm, Tc = 25°C, Rg = Rl = 50 Ω Vdd = 3.5 V, Vapc = control, Pout = 32.7 dBm, Tc = 25°C, Rg = Rl = 50 Ω f = 1710 MHz f = 1785 MHz f = 1785 MHz f = 1710 MHz

Rev.3, Feb. 2001, page 17 of 23 −6 −40 −22 4 6 Pin (dBm) Eff (%) Vdd = 3.5 V, Vapc = control, Pout = 26.7 dBm, Tc = 25°C, Rg = Rl = 50 Ω f = 1710 MHz f = 1785 MHz f = 1710 MHz f = 1785 MHz 2520 3015 35 Pout (dBm) −35 −25 −30 −20 −15 −10 Cross band Isolation at GSM RF-output when DCS is active (dBm) Vdd = 3.5 V, Vapc = control, Pin = 0 dBm, Tc = 25°C, Rg = Rl = 50 Ω

Rev.3, Feb. 2001, page 18 of 23 Vdd (V) Pout (dBm) GSM Hi mode Pin = 0 dBm, Vapc = 2.2 V, Tc = 25°C, Vtxlo = 0.1 V f = 880 MHz f = 915 MHz Vdd (V) Pout (dBm) GSM Lo mode Pin = 0 dBm, Vapc = 2.2 V, Tc = 25°C, Vtxlo = 2.4 V f = 880 MHz f = 915 MHz

Rev.3, Feb. 2001, page 19 of 23 Vdd (V) Eff (%) GSM Hi mode Pin = 0 dBm, Po = 35.5 dBm, Tc = 25°C, Vtxlo = 0.1 V f = 880 MHz f = 915 MHz Vdd (V) Eff (%) GSM Lo mode Pin = 0 dBm, Po = 30.8 dBm, Tc = 25°C, Vtxlo = 2.4 V f = 880 MHz f = 915 MHz

Rev.3, Feb. 2001, page 20 of 23 Vdd (V) Pout (dBm) DCS Pin = 0 dBm, Vapc = 2.2 V, Tc = 25°C f = 1710 MHz f = 1785 MHz Vdd (V) Eff (%) DCS Pin = 0 dBm, Po = 32.7 dBm, Tc = 25°C f = 1710 MHz f = 1785 MHz

Rev.3, Feb. 2001, page 21 of 23 10 15 25 30 20 35 40 Pout (dBm) −60 −50 −30 −40 −20 −10 Isolation at DCS RF-output when GSM is active (dBm) 10 15 25 30 20 35 40 Pout (dBm) −60 −50 −30 −40 −20 −10 Isolation at DCS RF-output when GSM is active (dBm) f = 915 MHz, Vdd = 3.5 V, Vapc = control, Vtxlo = 0.1 V, Pin = 0 dBm, Tc = 25°C, Rg = Rl = 50 Ω measured at f = 1830 MHz f = 880 MHz, Vdd = 3.5 V, Vapc = control, Vtxlo = 0.1 V, Pin = 0 dBm, Tc = 25°C, Rg = Rl = 50 Ω measured at f = 1760 MHz

Rev.3, Feb. 2001, page 22 of 23 Package Dimensions (Upper side) (Bottom side) Hitachi Code JEDEC JEITA Mass (reference value) RF-O-12 Unit: mm 1.8 ± 0.2 11.0 ± 0.3 (10.8) 11.0 ± 0.3 13.75 ± 0.3 13.75 ± 0.3 11.0 ± 0.3 (3.3) (3.3) (0.8) (0.8) (0.8) (1.4)(2.4)(2.4) (2.6)(2.6) (4.6)(4.6) (2.5) (2.5) G G 312 411 GG 510 G 910G1112 7 56G G Remark: Coplanarity of bottom side of terminals are less than 0 ± 0.1mm. (1.45)(1.4) (1.0) (1.4) (1.2) (1.4) 10: 11: 12: N/C N/C Pout DCS Vdd DCS Vdd GSM Pout GSM N/C Vtxlo Pin GSM Vapc GSM Vapc DCS Pin DCS GND

Rev.3, Feb. 2001, page 23 of 23 Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corporation product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corporation or a third party. 2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corporation by various means, including the Renesas Technology Corporation Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corporation for further details on these materials or the products contained therein. Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan http://www.renesas.com Copyright © 2003. Renesas Technology Corporation, All rights reserved. Printed in Japan. Colophon 0.0