PF0380UDF8 KEC | Alldatasheet
Document overview
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Technical content
- 1. 8 1/1 SEMICONDUCTOR TECHNICAL DATA PF0380UDF8 EMI Filtering TVS Revision No : 0 EMI Filtering TVS For Wireless Headsets.
FEATURES
EMI/RFI filtering. ESD Protection to IEC 61000-4-2 Level 4. Low insertion loss. Good attenuation of high frequency signals. Low clamping voltage. Low operating and leakage current. MAXIMUM RATING (Ta=25 ) 1,8 : Filter channel 1 2,7 : Filter channel 2 3,6 : Filter channel 3 4,5 : Filter channel 4 UDFN-8 MILLIMETERS C H G K L J A D E F A B DIM 1.80 1.20 0.40 0.125 0.03+0.02/-0.03
0.20 Min
0.50 0.05+_ 1.00 0.10+_ 0.30 0.10+_ 0.20 0.05+_ 0.25 0.05+_ TOP VIEW SIDE VIEW BOTTEM VIEW J B Pin 1 C GH D F E 1 4 8 5 LK GND PAD ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC SYMBOL RATING UNIT Power Dissipation *PD 400 mW Junction Temperature Tj 150 Storage Temperature Tstg -55 150 80pF 80pF 2.9nHFILTERn* FILTERn* GND EQUIVALENT CIRCUIT TENTATIVE CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Reverse Stand-Off Voltage VRWM - - - 12 V Reverse Breakdown Voltage VBR It=1mA 13.7 - 17.7 V Reverse Leakage Current IR VRWM=12V - - 0.1 A Inductance L Between Input and Output - 2.9 - nH Capacitance C0V VR=0V, Between I/O Pins and GND - 250 - pF C2.5V VR=2.5V, Between I/O Pins and GND - 160 - Series Resistance RS Between I/O Pins and GND - 0.28 - * Total Package Power Dissipation Type Name Lot No. MARKING