PESDXU1UT PHILIPS | Alldatasheet
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Technical content
- Product profile
1.1 General description
Ultra low capacitance ElectroStatic Discharge (ESD) protection diode in a SOT23 (TO-236AB) small SMD plastic package designed to protect one high-speed data line from the damage caused by ESD and other transients.
1.2 Features
1.3 Applications
1.4 Quick reference data
[1] Measured from pin 1 to 2 PESDxU1UT series Ultra low capacitance ESD protection diode in SOT23 package Rev. 01 — 11 May 2005 Product data sheet ■ Unidirectional ESD protection of one line■ ESD protection > 23 kV ■ Ultra low diode capacitance: Cd = 0.6 pF ■ IEC 61000-4-2; level 4 (ESD) ■ Max. peak pulse power: PPP up to 200 W■ IEC 61000-4-5; (surge) ■ Low clamping voltage ■ 10/100/1000 Ethernet ■ Local Area Network (LAN) equipment ■ FireWire ■ Computers and peripherals ■ Communication systems ■ High-speed datalines Table 1: Quick reference data Symbol Parameter Conditions Min Typ Max Unit VRWM reverse stand-off voltage PESD3V3U1UT - - 3.3 V PESD5V0U1UT - - 5.0 V PESD12VU1UT - - 12 V PESD15VU1UT - - 15 V PESD24VU1UT - - 24 V C d diode capacitance f = 1 MHz; V R =0V [1] - 0.6 1.5 pF
9397 750 14912 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 11 May 2005 2 of 13 Philips Semiconductors PESDxU1UT series Ultra low capacitance ESD protection diode in SOT23 package 2. Pinning information 3. Ordering information 4. Marking [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China Table 2: Pinning Pin Description Simplified outline Symbol 1 cathode ESD protection diode 2 cathode compensation diode 3 common anode 006aaa441 Table 3: Ordering information Type number Package Name Description Version PESD3V3U1UT - plastic surface mounted package; 3 leads SOT23 PESD5V0U1UT PESD12VU1UT PESD15VU1UT PESD24VU1UT Table 4: Marking codes Type number Marking code[1] PESD3V3U1UT *AP PESD5V0U1UT *AQ PESD12VU1UT *AR PESD15VU1UT *AS PESD24VU1UT *AT
9397 750 14912 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 11 May 2005 3 of 13 Philips Semiconductors PESDxU1UT series Ultra low capacitance ESD protection diode in SOT23 package 5. Limiting values [1] Non-repetitive current pulse 8/20µs exponential decay waveform according to IEC 61000-4-5. Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit PPP peak pulse power 8/20 µs [1] PESD3V3U1UT - 80 W PESD5V0U1UT - 80 W PESD12VU1UT - 200 W PESD15VU1UT - 200 W PESD24VU1UT - 200 W I PP peak pulse current 8/20 µs [1] PESD3V3U1UT - 5 A PESD5V0U1UT - 5 A PESD12VU1UT - 5 A PESD15VU1UT - 5 A PESD24VU1UT - 3 A T j junction temperature - 150 °C Tamb ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C
9397 750 14912 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 11 May 2005 4 of 13 Philips Semiconductors PESDxU1UT series Ultra low capacitance ESD protection diode in SOT23 package [1] Device stressed with ten non-repetitive ESD pulses. [2] Measured from pin 1 to 2 Table 6: ESD maximum ratings Symbol Parameter Conditions Min Max Unit VESD electrostatic discharge voltage IEC 61000-4-2 (contact discharge) [1][2] PESD3V3U1UT - 30 kV PESD5V0U1UT - 30 kV PESD12VU1UT - 30 kV PESD15VU1UT - 30 kV PESD24VU1UT - 23 kV PESDxU1UT HBM MIL-STD-883 - 10 kV Table 7: ESD standards compliance Standard Conditions IEC 61000-4-2; level 4 (ESD) > 15 kV (air); > 8 kV (contact) HBM MIL-STD-883; class 3 > 4 kV Fig 1. 8/20µs pulse waveform according to IEC 61000-4-5 Fig 2. ESD pulse waveform according to IEC 61000-4-2 t (µs) 04 0 3010 20 001aaa630 120 IPP (%) e−t 100 % IPP ; 8 µs 50 % IPP ; 20 µs 001aaa631 IPP 100 % 90 % t 30 ns 60 ns 10 % tr = 0.7 ns to 1 ns
9397 750 14912 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 11 May 2005 5 of 13 Philips Semiconductors PESDxU1UT series Ultra low capacitance ESD protection diode in SOT23 package 6. Characteristics [1] Non-repetitive current pulse 8/20µs exponential decay waveform according to IEC 61000-4-5. [2] Measured from pin 1 to 2 Table 8: Characteristics Tamb = 25°C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit VRWM reverse stand-off voltage PESD3V3U1UT - - 3.3 V PESD5V0U1UT - - 5.0 V PESD12VU1UT - - 12 V PESD15VU1UT - - 15 V PESD24VU1UT - - 24 V I RM reverse leakage current PESD3V3U1UT V RWM = 3.3 V - 0.25 2 µA PESD5V0U1UT V RWM = 5.0 V - 0.03 1 µA PESD12VU1UT V RWM = 12 V - < 1 50 nA PESD15VU1UT V RWM = 15 V - < 1 50 nA PESD24VU1UT V RWM = 24 V - < 1 50 nA VBR breakdown voltage I R = 5 mA [2] PESD3V3U1UT 5.8 6.4 6.9 V PESD5V0U1UT 7.0 7.6 8.2 V PESD12VU1UT 14.2 15.0 16.7 V PESD15VU1UT 17.1 18.9 20.3 V PESD24VU1UT 25.4 27.8 30.3 V C d diode capacitance f = 1 MHz; V R = 0 V [2] - 0.6 1.5 pF VCL clamping voltage [1][2] PESD3V3U1UT I PP = 1 A - - 9 V IPP = 5 A - - 20 V PESD5V0U1UT I PP = 1 A - - 12 V IPP = 5 A - - 21 V PESD12VU1UT I PP = 1 A - - 23 V IPP = 5 A - - 39 V PESD15VU1UT I PP = 1 A - - 28 V IPP = 5 A - - 53 V PESD24VU1UT I PP = 1 A - - 40 V IPP = 3 A - - 76 V rdif differential resistance IR = 1 mA PESD3V3U1UT - - 400 Ω PESD5V0U1UT - - 80 Ω PESD12VU1UT - - 200 Ω PESD15VU1UT - - 225 Ω PESD24VU1UT - - 300 Ω
9397 750 14912 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 11 May 2005 6 of 13 Philips Semiconductors PESDxU1UT series Ultra low capacitance ESD protection diode in SOT23 package PESD3V3U1UT; PESD5V0U1UT IR is less than 10 nA at 150°C for: PESD12VU1UT; PESD15VU1UT; PESD24VU1UT Fig 3. V-I characteristics Fig 4. Relative variation of reverse leakage current as a function of junction temperature; typical values 006aaa407 VCL VBR VRWM IRM IR IPP V I P-N − + 006aaa442 Tj (°C) −100 150 10005 0−50 10−1 IR IR(25˚C)
9397 750 14912 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 11 May 2005 7 of 13 Philips Semiconductors PESDxU1UT series Ultra low capacitance ESD protection diode in SOT23 package 7. Application information The PESDxU1UT series is designed for protection of high-speed datalines from damage caused by ESD and surge pulses. PESDxU1UT devices combine an ESD protection diode and an ultra low capacitance compensation diode to ensure an effective device capacitance as low as 0.6 pF . The PESDxU1UT series provides a surge capability of up to 200 W per line for an 8/20µs waveform. Two PESDxU1UT devices in anti-parallel configuration provide ESD protection in a common-mode application. The two PESDxU1UT devices should be connected as follows: protected data line is connected to device 1 / pin 2 device 2 / pin 1 Ground is connected to device 1 / pin 1 device 2 / pin 2 pin 3 is not connected for both devices Fig 5. Bi-directional ESD protection of one line, common mode Two PESDxU1UT devices in anti-parallel configuration provide ESD protection in a differential-mode configuration as e.g. for Ethernet applications. The two PESDxU1UT should be connected as follows: I/O line 1 is connected to device 1 / pin 2 device 2 / pin 1 I/O line 2 is connected to device 1 / pin 1 device 2 / pin 2 pin 3 is not connected for both devices Fig 6. Differential mode Ethernet protection 006aaa443 3 n.c.n.c.3 protected data line ground PESDxU1UTPESDxU1UT ETHERNET TRANSCEIVER 006aaa444 3 n.c.n.c. I/O 1 I/O 2 PESDxU1UTPESDxU1UT
9397 750 14912 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 11 May 2005 8 of 13 Philips Semiconductors PESDxU1UT series Ultra low capacitance ESD protection diode in SOT23 package Circuit board layout and protection device placement Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT) and surge transients. The following guidelines are recommended: 1. Place the PESDxU1UT as close to the input terminal or connector as possible. 2. The path length between the PESDxU1UT and the protected line should be minimized. 3. Keep parallel signal paths to a minimum. 4. Avoid running protected conductors in parallel with unprotected conductors. 5. Minimize all printed-circuit board conductive loops including power and ground loops. 6. Minimize the length of the transient return path to ground. 7. Avoid using shared transient return paths to a common ground point. 8. Ground planes should be used whenever possible. For multilayer printed-circuit boards, use ground vias.
9397 750 14912 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 11 May 2005 9 of 13 Philips Semiconductors PESDxU1UT series Ultra low capacitance ESD protection diode in SOT23 package 8. Test information Fig 7. ESD clamping test set-up and waveforms 006aaa445 50 Ω R Z C Z D.U.T. (Device Under Test) vertical scale = 200 V/div horizontal scale = 50 ns/div unclamped +1 kV ESD voltage waveform (IEC 61000-4-2 network) clamped +1 kV ESD voltage waveform (IEC 61000-4-2 network) unclamped −1 kV ESD voltage waveform (IEC 61000-4-2 network) clamped −1 kV ESD voltage waveform (IEC 61000-4-2 network) vertical scale = 200 V/div horizontal scale = 50 ns/div vertical scale = 20 V/div horizontal scale = 50 ns/div vertical scale = 20 V/div; horizontal scale = 50 ns/div GND GND 450 Ω RG 223/U 50 Ω coax ESD TESTER IEC 61000-4-2 network C Z = 150 pF; RZ = 330 Ω
4 GHz DIGITAL
10× ATTENUATOR GND GND GND GND GND GND PESD3V3U1UT PESD5V0U1UT PESD12VU1UT PESD15VU1UT PESD24VU1UT
9397 750 14912 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 11 May 2005 10 of 13 Philips Semiconductors PESDxU1UT series Ultra low capacitance ESD protection diode in SOT23 package 9. Package outline 10. Packing information [1] For further information and the availability of packing methods, seeSection16. Fig 8. Package outline SOT23 (TO-236AB) 04-11-04Dimensions in mm 0.45 0.15 1.9 1.1 0.9 3.0 2.8 2.5 2.1 1.4 1.2 0.48 0.38 0.15 0.09 Table 9: Packing methods The -xxx numbers are the last three digits of the 12NC ordering code.[1] Type number Package Description Packing quantity 3000 10000 PESD3V3U1UT SOT23 4 mm pitch, 8 mm tape and reel -215 -235 PESD5V0U1UT PESD12VU1UT PESD15VU1UT PESD24VU1UT
9397 750 14912 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 11 May 2005 11 of 13 Philips Semiconductors PESDxU1UT series Ultra low capacitance ESD protection diode in SOT23 package 11. Revision history Table 10: Revision history Document ID Release date Data sheet status Change notice Doc. number Supersedes PESDXU1UT_SER_1 20050511 Product data sheet - 9397 750 14912 -
Philips Semiconductors PESDxU1UT series Ultra low capacitance ESD protection diode in SOT23 package 9397 750 14912 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 11 May 2005 12 of 13 12. Data sheet status [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 13. Definitions Short-form specification —The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 14. Disclaimers Life support —These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes —Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 15. Trademarks Notice —All referenced brands, product names, service names and trademarks are the property of their respective owners. 16. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com Level Data sheet status[1] Product status[2][3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN).
© Koninklijke Philips Electronics N.V. 2005 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 11 May 2005 Document number: 9397 750 14912 Published in The Netherlands Philips Semiconductors PESDxU1UT series Ultra low capacitance ESD protection diode in SOT23 package 17. Contents