PESD12VS2UT

PESD12VS2UT PHILIPS | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 13

Technical content

Product specification Supersedes data of 2003 Aug 20

2004 Apr 15

Double ESD protection diodes in SOT23 package

2004 Apr 15 2

Philips Semiconductors Product specification Double ESD protection diodes in SOT23 package PESDxS2UT series

FEATURES

• Uni-directional ESD protection of up to two lines
• Max. peak pulse power: Ppp = 330 W at tp = 8/20µs
• Low clamping voltage: V(CL)R = 20 V at Ipp =1 8A
• Ultra-low reverse leakage current: IRM < 700 nA
• ESD protection > 23 kV
• IEC 61000-4-2; level 4 (ESD)
• IEC 61000-4-5 (surge); Ipp = 18 A at tp = 8/20µs.

APPLICATIONS

• Computers and peripherals
• Communication systems
• Audio and video equipment
• High speed data lines
• Parallel ports.

DESCRIPTION

Uni-directional double ESD protection diodes in a SOT23 plastic package. Designed to protect up to two transmission or data lines from ElectroStatic Discharge (ESD) damage. MARKING Note 1. * = p : made in Hong Kong. * = t : made in Malaysia. * = W : made in China. QUICK REFERENCE DATA PINNING TYPE NUMBER MARKING CODE (1) PESD3V3S2UT *U9 PESD5V2S2UT *U1 PESD12VS2UT *U2 PESD15VS2UT *U3 PESD24VS2UT *U4 SYMBOL PARAMETER VALUE UNIT VRWM reverse stand-off voltage 3.3, 5.2, 12, 15 and 24 V C d diode capacitance VR =0V ; f = 1 MHz 207, 152, 38, 32 and 23 pF number of protected lines PIN DESCRIPTION 1 cathode 1 2 cathode 2 3 common anode sym022 001aaa490 Fig.1 Simplified outline (SOT23) and symbol.

2004 Apr 15 3

Philips Semiconductors Product specification Double ESD protection diodes in SOT23 package PESDxS2UT series

ORDERING INFORMATION

In accordance with the Absolute Maximum Rating System (IEC 60134). Notes 1. Non-repetitive current pulse 8/20µs exponential decay waveform; see Fig.2. 2. Measured across either pins 1 and 3 or pins 2 and 3. TYPE NUMBER PACKAGE NAME DESCRIPTION VERSION PESD3V3S2UT − plastic surface mounted package; 3 leads SOT23 PESD5V2S2UT PESD12VS2UT PESD15VS2UT PESD24VS2UT SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT P pp peak pulse power 8/20 µs pulse; notes 1 and 2 PESD3V3S2UT − 330 W PESD5V2S2UT − 260 W PESD12VS2UT − 180 W PESD15VS2UT − 160 W PESD24VS2UT − 160 W Ipp peak pulse current 8/20 µs pulse; notes 1 and 2 PESD3V3S2UT − 18 A PESD5V2S2UT − 15 A PESD12VS2UT − 5A PESD15VS2UT − 5A PESD24VS2UT − 3A Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C

2004 Apr 15 4

Philips Semiconductors Product specification Double ESD protection diodes in SOT23 package PESDxS2UT series ESD maximum ratings Notes 1. Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses; see Fig.3. 2. Measured across either pins 1 and 3 or pins 2 and 3. SYMBOL PARAMETER CONDITIONS VALUE UNIT ESD electrostatic discharge capability IEC 61000-4-2 (contact discharge); notes 1 and 2 PESD3V3S2UT 30 kV PESD5V2S2UT 30 kV PESD12VS2UT 30 kV PESD15VS2UT 30 kV PESD24VS2UT 23 kV HBM MIL-Std 883 PESDxS2UT series 10 kV ESD standards compliance ESD STANDARD CONDITIONS IEC 61000-4-2; level 4 (ESD); see Fig.3 >15 kV (air); > 8 kV (contact) HBM MIL-Std 883; class 3 >4 kV handbook, halfpage 01 0 e−t t (µs) Ipp (%) 120 MLE218 100 % Ipp; 8 µs 50 % Ipp; 20 µs Fig.2 8/20µs pulse waveform according to IEC 61000-4-5. 001aaa191 Ipp 100 % 90 % t 30 ns 60 ns 10 % tr = 0.7 to 1 ns Fig.3 ElectroStatic Discharge (ESD) pulse waveform according to IEC 61000-4-2.

2004 Apr 15 5

Philips Semiconductors Product specification Double ESD protection diodes in SOT23 package PESDxS2UT series

ELECTRICAL CHARACTERISTICS

Tj=2 5°C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VRWM reverse stand-off voltage PESD3V3S2UT −− 3.3 V PESD5V2S2UT −− 5.2 V PESD12VS2UT −− 12 V PESD15VS2UT −− 15 V PESD24VS2UT −− 24 V IRM reverse leakage current PESD3V3S2UT V RWM = 3.3 V − 0.7 2 µA PESD5V2S2UT V RWM = 5.2 V − 0.15 1 µA PESD12VS2UT V RWM = 12 V − <0.02 1 µA PESD15VS2UT V RWM = 15 V − <0.02 1 µA PESD24VS2UT V RWM = 24 V − <0.02 1 µA VBR breakdown voltage I Z = 5 mA PESD3V3S2UT 5.2 5.6 6.0 V PESD5V2S2UT 6.4 6.8 7.2 V PESD12VS2UT 14.7 15.0 15.3 V PESD15VS2UT 17.6 18.0 18.4 V PESD24VS2UT 26.5 27.0 27.5 V C d diode capacitance f = 1 MHz; V R =0V PESD3V3S2UT − 207 300 pF PESD5V2S2UT − 152 200 pF PESD12VS2UT − 38 75 pF PESD15VS2UT − 32 70 pF PESD24VS2UT − 23 50 pF V(CL)R clamping voltage notes 1 and 2 PESD3V3S2UT I pp =1A −− 7V Ipp =1 8A −− 20 V PESD5V2S2UT I pp =1A −− 9V Ipp =1 5A −− 20 V PESD12VS2UT I pp =1A −− 19 V Ipp =5A −− 35 V PESD15VS2UT I pp =1A −− 23 V Ipp =5A −− 40 V PESD24VS2UT I pp =1A −− 36 V Ipp =3A −− 70 V

2004 Apr 15 6

Philips Semiconductors Product specification Double ESD protection diodes in SOT23 package PESDxS2UT series Notes 1. Non-repetitive current pulse 8/20µs exponential decay waveform; see Fig.2. 2. Measured either across pins 1 and 3 or pins 2 and 3. R diff differential resistance PESD3V3S2UT I R =1m A −− 400 Ω PESD5V2S2UT I R =1m A −− 80 Ω PESD12VS2UT I R =1m A −− 200 Ω PESD15VS2UT I R =1m A −− 225 Ω PESD24VS2UT I R = 0.5 mA −− 300 Ω SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT GRAPHICAL DATA 001aaa147 103 102 104 Ppp (W) tp (µs) 11 0 410310 10 2 (1) (2) Fig.4 Peak pulse power dissipation as a function of pulse time; typical values. Tamb =2 5°C. tp = 8/20µs exponential decay waveform; see Fig.2. (1) PESD3V3S2UT and PESD5V2S2UT. (2) PESD12VS2UT, PESD15VS2UT, PESD24VS2UT Tj (°C) 0 200 15050 100 001aaa193 0.4 0.8 1.2 P pp Ppp(25˚C) Fig.5 Relative variation of peak pulse power as a function of junction temperature; typical values.

2004 Apr 15 7

Philips Semiconductors Product specification Double ESD protection diodes in SOT23 package PESDxS2UT series VR (V) 05 4231 001aaa148 120 160 200 240 C d (pF) (1) (2) Fig.6 Diode capacitance as a function of reverse voltage; typical values. Tamb = 25°C; f = 1 MHz. (1) PESD3V3S2UT; V RWM = 3.3 V. (2) PESD5V2S2UT; V RWM =5V . VR (V) 02 5 2010 155 001aaa149 C d (pF) (1) (3) (2) Fig.7 Diode capacitance as a function of reverse voltage; typical values. Tamb = 25°C; f = 1 MHz. (1) PESD12VS2UT; V RWM =1 2V . (2) PESD15VS2UT; V RWM =1 5V . (3) PESD24VS2UT; V RWM =2 4V .

2004 Apr 15 8

Philips Semiconductors Product specification Double ESD protection diodes in SOT23 package PESDxS2UT series 001aaa270 10−1 Tj (°C) −100 150 10005 0−50 IR IR(25˚C) (1) Fig.8 Relative variation of reverse leakage current as a function of junction temperature; typical values. IR is less than 10 nA at 150°C for: PESD12V52UT; V RWM =1 2V . PESD15VS2UT; V RWM =1 5V . PESD24VS2UT; V RWM =2 4V . (1) PESD3V3S2UT; V RWM = 3.3 V. PESD5V2S2UT; V RWM =5V .

2004 Apr 15 9

Philips Semiconductors Product specification Double ESD protection diodes in SOT23 package PESDxS2UT series 001aaa492 450 Ω 50 Ω Note 1: IEC61000-4-2 network CZ = 150 pF; RZ = 330 Ω D.U.T.: PESDxS2UT RG 223/U 50 Ω coaxR Z C Z ESD TESTER 4 GHz DIGITAL OSCILLOSCOPE10× ATTENUATOR vertical scale = 200 V/div horizontal scale = 50 ns/div vertical scale = 20 V/div horizontal scale = 50 ns/div vertical scale = 200 V/div horizontal scale = 50 ns/div vertical scale = 10 V/div horizontal scale = 50 ns/div GND GND GND GND GND GND GND unclamped +1 kV ESD voltage waveform (IEC61000-4-2 network) clamped +1 kV ESD voltage waveform (IEC61000-4-2 network) GND unclamped −1 kV ESD voltage waveform (IEC61000-4-2 network) clamped −1 kV ESD voltage waveform (IEC61000-4-2 network) note 1 PESD24VS2UT PESD15VS2UT PESD12VS2UT PESD5V2S2UT PESD3V3S2UT Fig.9 ESD clamping test set-up and waveforms.

2004 Apr 15 10

Philips Semiconductors Product specification Double ESD protection diodes in SOT23 package PESDxS2UT series

APPLICATION INFORMATION

The PESDxS2UT series is designed for uni-directional protection for up to two lines against damage caused by ElectroStatic Discharge (ESD) and surge pulses. The PESDxS2UT series may be used on lines where the signal polarities are below ground. PESDxS2UT series provide a surge capability of up to 330 W (P pp) per line for an 8/20µs waveform. Circuit board layout and protection device placement Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT) and surge transients. The following guidelines are recommended:

• Place the PESDxS2UT as close as possible to the input terminal or connector.
• The path length between the PESDxS2UT and the protected line should be minimized.
• Keep parallel signal paths to a minimum.
• Avoid running protected conductors in parallel with unprotected conductors.
• Minimize all printed-circuit board conductive loops including power and ground loops.
• Minimize the length of transient return paths to ground.
• Avoid using shared return paths to a common ground point.
• Ground planes should be used whenever possible. For multilayer printed-circuit boards use ground vias. 001aaa491 PESDxS2UT line 1 to be protected unidirectional protection of two lines bidirectional protection of one line line 2 to be protected ground PESDxS2UT line 1 to be protected ground Fig.10 Typical application: ESD protection of data lines.

2004 Apr 15 11

Philips Semiconductors Product specification Double ESD protection diodes in SOT23 package PESDxS2UT series PACKAGE OUTLINE UNIT A 1 max. bp cD E e1 H E Lp Qw v REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE 97-02-28 99-09-13 IEC JEDEC EIAJ mm 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 0.95 e 1.9 2.5 2.1 0.55 0.45 0.10.2 DIMENSIONS (mm are the original dimensions) 0.45 0.15 SOT23 TO-236AB bp D e A Lp Q detail X H E E w M v M A B AB 0 1 2 mm scale A 1.1 0.9 c X Plastic surface mounted package; 3 leads SOT23

2004 Apr 15 12

Philips Semiconductors Product specification Double ESD protection diodes in SOT23 package PESDxS2UT series DATA SHEET STATUS Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. LEVEL DATA SHEET STATUS (1) PRODUCT STATUS (2)(3) DEFINITION I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.

© Koninklijke Philips Electronics N.V. 2004 SCA76 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 Printed in The Netherlands R76/03/pp13 Date of release:2004 Apr 15 Document order number: 9397 750 12823