PESDXS2UQ PHILIPS | Alldatasheet

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Product specification Supersedes data of 2003 Dec 15

2004 Apr 27

Double ESD protection diodes in SOT663 package M3D793

2004 Apr 27 2

Philips Semiconductors Product specification Double ESD protection diodes in SOT663 package PESDxS2UQ series

FEATURES

  • Uni-directional ESD protection of up to two lines
  • Max. peak pulse power: Ppp = 150 W at tp = 8/20µs
  • Low clamping voltage: V(CL)R = 20 V at Ipp =1 5A
  • Low reverse leakage current: IRM <1n A
  • ESD protection > 30 kV
  • IEC 61000-4-2; level 4 (ESD)
  • IEC 61000-4-5 (surge); Ipp = 15 A at tp = 8/20µs.

APPLICATIONS

  • Computers and peripherals
  • Communication systems
  • Audio and video equipment
  • High speed data lines
  • Parallel ports.

DESCRIPTION

Uni-directional double ESD protection diodes in a SOT663 plastic package. Designed to protect up to two transmission or data lines from ElectroStatic Discharge (ESD) damage. MARKING Note 1. * = p : made in Hong Kong. * = t : made in Malaysia. * = W : made in China. QUICK REFERENCE DATA PINNING TYPE NUMBER MARKING CODE (1) PESD3V3S2UQ *E1 PESD5V0S2UQ *E2 PESD12VS2UQ *E3 PESD15VS2UQ *E4 PESD24VS2UQ *E5 SYMBOL PARAMETER VALUE UNIT VRWM reverse stand-off voltage 3.3, 5, 12, 15 and 24 V C d diode capacitance VR =0V ; f = 1 MHz 200, 150, 38, 32 and 23 pF number of protected lines PIN DESCRIPTION 1 cathode 1 2 cathode 2 3 common anode sym022 1 2 001aaa732 Fig.1 Simplified outline (SOT663) and symbol.

2004 Apr 27 3

Philips Semiconductors Product specification Double ESD protection diodes in SOT663 package PESDxS2UQ series

ORDERING INFORMATION

In accordance with the Absolute Maximum Rating System (IEC 60134). Notes 1. Non-repetitive current pulse 8/20µs exponential decaying waveform; see Fig.2. 2. Measured across either pins 1 and 3 or pins 2 and 3. TYPE NUMBER PACKAGE NAME DESCRIPTION VERSION PESD3V3S2UQ − plastic surface mounted package; 3 leads SOT663 PESD5V0S2UQ PESD12VS2UQ PESD15VS2UQ PESD24VS2UQ SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT P pp peak pulse power 8/20 µs pulse; notes 1 and 2 − 150 W Ipp peak pulse current 8/20 µs pulse; notes 1 and 2 PESD3V3S2UQ − 15 A PESD5V0S2UQ − 15 A PESD12VS2UQ − 5A PESD15VS2UQ − 5A PESD24VS2UQ − 3A Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C

2004 Apr 27 4

Philips Semiconductors Product specification Double ESD protection diodes in SOT663 package PESDxS2UQ series ESD maximum ratings Notes 1. Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses; see Fig.3. 2. Measured across either pins 1 and 3 or pins 2 and 3. SYMBOL PARAMETER CONDITIONS VALUE UNIT ESD electrostatic discharge capability IEC 61000-4-2 (contact discharge); notes 1 and 2 PESD3V3S2UQ 30 kV PESD5V0S2UQ 30 kV PESD12VS2UQ 30 kV PESD15VS2UQ 30 kV PESD24VS2UQ 23 kV HBM MIL-Std 883 PESDxS2UQ series 10 kV ESD standards compliance ESD STANDARD CONDITIONS IEC 61000-4-2; level 4 (ESD); see Fig.3 >15 kV (air); > 8 kV (contact) HBM MIL-Std 883; class 3 >4 kV handbook, halfpage 01 0 e−t t (µs) Ipp (%) 120 MLE218 100 % Ipp; 8 µs 50 % Ipp; 20 µs Fig.2 8/20µs pulse waveform according to IEC 61000-4-5. 001aaa191 Ipp 100 % 90 % t 30 ns 60 ns 10 % tr = 0.7 to 1 ns Fig.3 ElectroStatic Discharge (ESD) pulse waveform according to IEC 61000-4-2.

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Philips Semiconductors Product specification Double ESD protection diodes in SOT663 package PESDxS2UQ series

ELECTRICAL CHARACTERISTICS

Tj=2 5°C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VRWM reverse stand-off voltage PESD3V3S2UQ −− 3.3 V PESD5V0S2UQ −− 5V PESD12VS2UQ −− 12 V PESD15VS2UQ −− 15 V PESD24VS2UQ −− 24 V IRM reverse leakage current PESD3V3S2UQ V RWM = 3.3 V − 0.55 3 µA PESD5V0S2UQ V RWM = 5 V − 50 300 nA PESD12VS2UQ V RWM = 12 V − <1 30 nA PESD15VS2UQ V RWM = 15 V − <1 50 nA PESD24VS2UQ V RWM = 24 V − <1 50 nA VBR breakdown voltage I Z = 5 mA PESD3V3S2UQ 5.2 5.6 6.0 V PESD5V0S2UQ 6.4 6.8 7.2 V PESD12VS2UQ 14.7 15.0 15.3 V PESD15VS2UQ 17.6 18.0 18.4 V PESD24VS2UQ 26.5 27.0 27.5 V C d diode capacitance f = 1 MHz; V R =0V PESD3V3S2UQ − 200 275 pF PESD5V0S2UQ − 150 215 pF PESD12VS2UQ − 38 100 pF PESD15VS2UQ − 32 70 pF PESD24VS2UQ − 23 50 pF V(CL)R clamping voltage notes 1 and 2 PESD3V3S2UQ I pp =1A −− 8V Ipp =1 5A −− 20 V PESD5V0S2UQ I pp =1A −− 9V Ipp =1 5A −− 20 V PESD12VS2UQ I pp =1A −− 19 V Ipp =5A −− 35 V PESD15VS2UQ I pp =1A −− 23 V Ipp =5A −− 40 V PESD24VS2UQ I pp =1A −− 36 V Ipp =3A −− 70 V

2004 Apr 27 6

Philips Semiconductors Product specification Double ESD protection diodes in SOT663 package PESDxS2UQ series Notes 1. Non-repetitive current pulse 8/20µs exponential decay waveform; see Fig.2. 2. Measured either across pins 1 and 3 or pins 2 and 3. R diff differential resistance PESD3V3S2UQ I R =5m A −− 40 Ω PESD5V0S2UQ I R =5m A −− 15 Ω PESD12VS2UQ I R =5m A −− 15 Ω PESD15VS2UQ I R =1m A −− 225 Ω PESD24VS2UQ I R = 0.5 mA −− 300 Ω SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT GRAPHICAL DATA tp (µs) 11 0 310210 001aaa726 103 102 104 Ppp (W) Fig.4 Peak pulse power dissipation as a function of pulse time; typical values. Tamb =2 5°C. tp = 8/20µs exponential decaying waveform; see Fig.2. Tj (°C) 0 200 15050 100 001aaa193 0.4 0.8 1.2 P pp Ppp(25˚C) Fig.5 Relative variation of peak pulse power as a function of junction temperature; typical values.

2004 Apr 27 7

Philips Semiconductors Product specification Double ESD protection diodes in SOT663 package PESDxS2UQ series VR (V) 05 4231 001aaa727 120 160 200 240 C d (pF) (1) (2) Fig.6 Diode capacitance as a function of reverse voltage; typical values. Tamb = 25°C; f = 1 MHz. (1) PESD3V3S2UQ; V RWM = 3.3 V. (2) PESD5V0S2UQ; V RWM =5V . VR (V) 02 5 2010 155 001aaa728 C d (pF) (1) (3) (2) Fig.7 Diode capacitance as a function of reverse voltage; typical values. Tamb = 25°C; f = 1 MHz. (1) PESD12VS2UQ; V RWM =1 2V . (2) PESD15VS2UQ; V RWM =1 5V . (3) PESD24VS2UQ; V RWM =2 4V .

2004 Apr 27 8

Philips Semiconductors Product specification Double ESD protection diodes in SOT663 package PESDxS2UQ series 001aaa729 10−1 Tj (°C) −100 150 10005 0−50 IR IR(25°C) (1) (2) Fig.8 Relative variation of reverse leakage current as a function of junction temperature; typical values. IR is less than 15 nA at 150°C for: PESD12VS2UQ; V RWM =1 2V . PESD15VS2UQ; V RWM =1 5V . PESD24VS2UQ; V RWM =2 4V . (1) PESD3V3S2UQ; V RWM = 3.3 V. (2) PESD5V0S2UQ; V RWM =5V .

2004 Apr 27 9

Philips Semiconductors Product specification Double ESD protection diodes in SOT663 package PESDxS2UQ series 001aaa731 450 Ω 50 Ω Note 1: IEC61000-4-2 network CZ = 150 pF; RZ = 330 Ω D.U.T.: PESDxS2UQ RG 223/U 50 Ω coaxR Z C Z ESD TESTER 4 GHz DIGITAL OSCILLOSCOPE10× ATTENUATOR vertical scale = 200 V/div horizontal scale = 50 ns/div vertical scale = 20 V/div horizontal scale = 50 ns/div vertical scale = 200 V/div horizontal scale = 50 ns/div vertical scale = 10 V/div horizontal scale = 50 ns/div GND GND GND GND GND GND GND unclamped +1 kV ESD voltage waveform (IEC61000-4-2 network) clamped +1 kV ESD voltage waveform (IEC61000-4-2 network) GND unclamped −1 kV ESD voltage waveform (IEC61000-4-2 network) clamped −1 kV ESD voltage waveform (IEC61000-4-2 network) note 1 PESD24VS2UQ PESD15VS2UQ PESD12VS2UQ PESD5V2S2UQ PESD3V3S2UQ Fig.9 ESD clamping test set-up and waveforms.

2004 Apr 27 10

Philips Semiconductors Product specification Double ESD protection diodes in SOT663 package PESDxS2UQ series

APPLICATION INFORMATION

The PESDxS2UQ series is designed for uni-directional protection for up to two data lines against damage caused by ElectroStatic Discharge (ESD) and surge pulses. The PESDxS2UQ series may be used on lines where the signal polarities are below ground. PESDxS2UQ series provide a surge capability of up to 150 W (P pp) per line for an 8/20µs waveform. Circuit board layout and protection device placement Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT) and surge transients. The following guidelines are recommended:

  • Place the PESDxS2UQ as close as possible to the input terminal or connector.
  • The path length between the PESDxS2UQ and the protected line should be minimized.
  • Keep parallel signal paths to a minimum.
  • Avoid running protected conductors in parallel with unprotected conductors.
  • Minimize all printed-circuit board conductive loops including power and ground loops.
  • Minimize the length of transient return paths to ground.
  • Avoid using shared return paths to a common ground point.
  • Ground planes should be used whenever possible. For multilayer printed-circuit boards use ground vias. 001aaa730 PESDxS2UQ line 1 to be protected uni-directional protection of two lines bi-directional protection of one line line 2 to be protected ground PESDxS2UQ line 1 to be protected ground Fig.10 Typical application: ESD protection of data lines.

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Philips Semiconductors Product specification Double ESD protection diodes in SOT663 package PESDxS2UQ series PACKAGE OUTLINE UNIT b p cD E e1 H E Lp w REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE 01-12-04 02-05-21 IEC JEDEC JEITA mm 0.33 0.23 0.18 0.08 1.7 1.5 1.3 1.1 0.5 e 1.0 1.7 1.5 0.1 y 0.1 DIMENSIONS (mm are the original dimensions) 0.3 0.1 SOT663 bp D e A Lp detail X H E EB 0 1 2 mm scale A 0.6 0.5 c X Plastic surface mounted package; 3 leads SOT663 Y w M B

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Philips Semiconductors Product specification Double ESD protection diodes in SOT663 package PESDxS2UQ series DATA SHEET STATUS Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. LEVEL DATA SHEET STATUS (1) PRODUCT STATUS (2)(3) DEFINITION I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.

© Koninklijke Philips Electronics N.V. 2004 SCA76 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 Printed in The Netherlands R76/02/pp13 Date of release:2004 Apr 27 Document order number: 9397 750 13053