PESD12VS1UL

PESDXS1UL NXP | Alldatasheet

Document overview

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Technical content

1.1 General description

line from the damage caused by ESD and other transients.

1.2 Features

1.3 Applications

1.4 Quick reference data

Table 1. Quick reference data

PESDXS1UL_SER_2 © NXP B.V. 2009. All rights reserved. [1] The marking bar indicates the cathode. Table 2. Pinning Table 3. Ordering information Table 4. Marking codes

PESDXS1UL_SER_2 © NXP B.V. 2009. All rights reserved. [1] Non-repetitive current pulse 8/20µs exponential decay waveform according to IEC 61000-4-5. [1] Device stressed with ten non-repetitive ESD pulses. Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Table 6. ESD maximum ratings Table 7. ESD standards compliance

PESDXS1UL_SER_2 © NXP B.V. 2009. All rights reserved. Table 8. Characteristics

PESDXS1UL_SER_2 © NXP B.V. 2009. All rights reserved. [1] Non-repetitive current pulse 8/20µs exponential decay waveform according to IEC 61000-4-5. Table 8. Characteristics …continued

PESDXS1UL_SER_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 20 August 2009 6 of 13 NXP Semiconductors PESDxS1UL series ESD protection diodes in a SOD882 package Tamb =2 5°C Fig 3. Peak pulse power as a function of exponential pulse duration; typical values Fig 4. Relative variation of peak pulse power as a function of junction temperature; typical values f = 1 MHz; Tamb =2 5°C (1) PESD3V3S1UL; V RWM = 3.3 V (2) PESD5V0S1UL; V RWM = 5.0 V f = 1 MHz; Tamb =2 5°C (1) PESD12VS1UL; V RWM =1 2V (2) PESD15VS1UL; V RWM =1 5V (3) PESD24VS1UL; V RWM =2 4V Fig 5. Diode capacitance as a function of reverse voltage; typical values Fig 6. Diode capacitance as a function of reverse voltage; typical values tp (µs) 11 0 310210 001aaa726 103 102 104 PPP (W) Tj (°C) 0 200 15050 100 001aaa193 0.4 0.8 1.2 P PP PPP(25°C) VR (V) 05 4231 001aaa727 120 160 200 240 C d (pF) (1) (2) VR (V) 02 5 2010 155 001aaa728 C d (pF) (1) (3) (2)

PESDXS1UL_SER_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 20 August 2009 7 of 13 NXP Semiconductors PESDxS1UL series ESD protection diodes in a SOD882 package (1) PESD3V3S1UL; V RWM = 3.3 V (2) PESD5V0S1UL; V RWM = 5.0 V IR is less than 15 nA at 150°C for: PESD12VS1UL; V RWM =1 2V PESD15VS1UL; V RWM =1 5V PESD24VS1UL; V RWM =2 4V Fig 7. Relative variation of reverse leakage current as a function of junction temperature; typical values Fig 8. V-I characteristics for a unidirectional ESD protection diode 001aaa729 10−1 Tj (°C) −100 150 10005 0−50 IRM IRM(25 °C) (1) (2) 006aaa407 −VCL −VBR −VRWM −IRM −IR −IPP V I P-N − +

PESDXS1UL_SER_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 20 August 2009 8 of 13 NXP Semiconductors PESDxS1UL series ESD protection diodes in a SOD882 package Fig 9. ESD clamping test setup and waveforms 006aaa682 450 W 50 W Note 1: IEC 61000-4-2 network Cs = 150 pF; Rd = 330 W RG 223/U

50 W coaxR d

OSCILLOSCOPE10· ATTENUATO R vertical scale = 200 V/div horizontal scale = 50 ns/div vertical scale = 20 V/div horizontal scale = 50 ns/div vertical scale = 200 V/div horizontal scale = 50 ns/div vertical scale = 10 V/div horizontal scale = 50 ns/div GND GND GND GND GND GND GND unclamped +1 kV ESD voltage waveform (IEC 61000-4-2 network) clamped +1 kV ESD voltage waveform (IEC 61000-4-2 network) GND unclamped -1 kV ESD voltage waveform (IEC 61000-4-2 network) clamped -1 kV ESD voltage waveform (IEC 61000-4-2 network) note 1 PESD24VS1UL PESD15VS1UL PESD12VS1UL PESD5V0S1UL PESD3V3S1UL D.U.T. (DEVICE UNDER TEST)

PESDXS1UL_SER_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 20 August 2009 9 of 13 NXP Semiconductors PESDxS1UL series ESD protection diodes in a SOD882 package 7. Application information The PESDxS1UL series is designed for protection of one unidirectional data line from the damage caused by ESD and surge pulses. The PESDxS1UL series may be used on lines where the signal polarities are either positive or negative with respect to ground. The PESDxS1UL series provides a surge capability of 150 W for an 8/20µs waveform. Circuit board layout and protection device placement Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT) and surge transients. The following guidelines are recommended: 1. Place the PESDxS1UL as close to the input terminal or connector as possible. 2. The path length between the PESDxS1UL and the protected line should be minimized. 3. Keep parallel signal paths to a minimum. 4. Avoid running protected conductors in parallel with unprotected conductors. 5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and ground loops. 6. Minimize the length of the transient return path to ground. 7. Avoid using shared transient return paths to a common ground point. 8. Ground planes should be used whenever possible. For multilayer PCBs, use ground vias. Fig 10. Application diagram 006aaa681 ground line to be protected (positive signal polarity) PESDxS1UL unidirectional protection of one line ground line to be protected (negative signal polarity) PESDxS1UL

PESDXS1UL_SER_2 © NXP B.V. 2009. All rights reserved. [1] For further information and the availability of packing methods, seeSection12. Table 9. Packing methods

PESDXS1UL_SER_2 © NXP B.V. 2009. All rights reserved. Table 10. Revision history

• This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content. PESDXS1UL_SER_1 20060331 Product data sheet - -

PESDXS1UL_SER_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 20 August 2009 12 of 13 NXP Semiconductors PESDxS1UL series ESD protection diodes in a SOD882 package 11. Legal information

11.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.

11.2 Definitions

Draft —The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet —A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.

11.3 Disclaimers

General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes —NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use —NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications —Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values —Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale —NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license —Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control —This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data —The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.

11.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 12. Contact information For more information, please visit:http://www.nxp.com For sales office addresses, please send an email to:salesaddresses@nxp.com Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.

NXP Semiconductors PESDxS1UL series ESD protection diodes in a SOD882 package © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 20 August 2009 Document identifier: PESDXS1UL_SER_2 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. 13. Contents