PESDXXXS1UJ UMW | Alldatasheet

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Unidirectional ElectroStatic Discharge (ESD) protection diodes in a very small Surface- Mounted Device (SMD) plastic package designed to protect one signal line from the damage caused by ESD and transient overvoltage. Features Applications Quick reference data n Transient Voltage Suppression (TVS) protection of one line n ESD protection up to 30 kV n Max. peak pulse power: PPP = 890 W n IEC 61000-4-2; level 4 (ESD) n Low clamping voltage: VCL =1 9V n IEC 61000-4-5 (surge); IPP =4 7A n Low leakage current: IRM = 300 nA n AEC-Q101 qualified n Computers and peripherals n Communication systems n Audio and video equipment n Portable electronics n Cellular handsets and accessories n Medical and industrial equipment Tamb = 25°C unless otherwise specified. V RWM reverse standoff voltage PESD5V0S1UJ - - 5 V PESD12VS1UJ - - 12 V C d diode capacitance f = 1 MHz; V R = 0 V PESD5V0S1UJ - 480 530 pF PESD12VS1UJ - 160 180 pF UMW PESDXXXS1UJ R Symbol Parameter Conditions Min Typ Max Unitwww.umw-ic.com 1 友台半导体有限公司

R Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). P PP peak pulse power t p = 8/20µ s [1][2] PESD5V0S1UJ - 890 W PESD12VS1UJ - 600 W IPP peak pulse current t p = 8/20µ s [1][2] PESD5V0S1UJ - 47 A PESD12VS1UJ - 22.5 A P tot total power dissipation Tamb ≤ 25 °C [3] - 420 mW [4] - 720 mW Tj junction temperature - 150 °C Tamb ambient temperature −55 +150 °C Tstg storage temperature −65 +150 °C Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). [1] Non-repetitive current pulse 8/20µs exponential decay waveform according to IEC 61000-4-5. [2] Soldering point of cathode tab. [3] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. ESD maximum ratings Tamb = 25°C unless otherwise specified. VESD electrostatic discharge voltage IEC 61000-4-2 (contact discharge) [1] -3 0 k V machine model - 400 V MIL-STD-883 (human body model) -1 6 k V [1] Device stressed with ten non-repetitive ESD pulses. ESD standards compliance IEC 61000-4-2; level 4 (ESD) > 15 kV (air); > 8 kV (contact) MIL-STD-883; class 3 (human body model) > 4 kV Standard Conditions Symbol Parameter Conditions Min Max Unit Symbol Parameter Conditions Min Max Unit Symbol Parameter Conditions Min Max Unitwww.umw-ic.com 2 友台半导体有限公司

R Fig 1. 8/20µs pulse waveform according to IEC 61000-4-5 Fig 2. ESD pulse waveform according to IEC 61000-4-2 t (µs) 04 0 3010 20 001aaa630 120 IPP (%) e−t 100 % IPP ; 8 µs 50 % IPP ; 20 µs www.techpublic.com.tw in free air [1] - - 290 K/W [2] - - 170 K/W Thermal characteristics R th(j-a) thermal resistance from junction to ambient R th(j-sp) thermal resistance from junction to solder point[3] - - 3 5 K/W [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm [3] Soldering point of cathode tab. Symbol Parameter Conditions Min Typ Max Unitwww.umw-ic.com 3 友台半导体有限公司

R Characteristics [1] Non-repetitive current pulse 8/20µs exponential decay waveform according to IEC 61000-4-5. Tamb = 25°C unless otherwise specified. VRWM reverse standoff voltage PESD5V0S1UJ - - 5 V PESD12VS1UJ - - 12 V IRM reverse leakage current PESD5V0S1UJ V RWM = 5 V - 0.3 4 µA PESD12VS1UJ V RWM = 12 V - < 1 100 nA VBR breakdown voltage I R = 5 mA PESD5V0S1UJ 6.2 6.8 7.3 V PESD12VS1UJ 13.3 14.5 15.75 V C d diode capacitance f = 1 MHz; VR = 0 V PESD5V0S1UJ - 480 530 pF PESD12VS1UJ - 160 180 pF VCL clamping voltage [1] PESD5V0S1UJ I PP = 47 A - - 19 V IPP = 25 A - - 13.5 V IPP = 5 A - - 9.8 V PESD12VS1UJ I PP = 22.5 A - - 27 V IPP = 15 A - - 23.5 V IPP = 5 A - - 19 V rdif differential resistance IR = 5 mA PESD5V0S1UJ - 2 100 Ω PESD12VS1UJ - 5 100 Ω Symbol Parameter Conditions Min Typ Max Unitwww.umw-ic.com 4 友台半导体有限公司

R T amb =2 5 C (1) PESD5V0S1UJ (2) PESD12VS1UJ Fig 3. Peak pulse power as a function of exponential pulse duration; typical values Fig 4. Relative variation of peak pulse power as a function of junction temperature; typical values f = 1 MHz; Tamb =2 5°C (1) PESD5V0S1UJ (2) PESD12VS1UJ (1) PESD5V0S1UJ (2) PESD12VS1UJ Fig 5. Diode capacitance as a function of reverse voltage; typical values Fig 6. Reverse leakage current as a function of ambient temperature; typical values tp (µs) 101 104103102 006aab414 103 102 104 PPP (W) 101 (1) (2) Tj (°C) 0 200 15050 100 001aaa193 0.4 0.8 1.2 PPP PPP(25°C) 006aab415 VR (V) 01 2 84 200 300 100 400 500 C d (pF) (1) (2) 006aab416 102 103 IRM (nA) 10−1 Tamb (°C) −75 17512525 75−25 (1) (2)www.umw-ic.com 5 友台半导体有限公司 GND unclamped +8 kV ESD pulse waveform (IEC 61000-4-2 network) vertical scale = 10 A/div horizontal scale = 15 ns/div clamped +8 kV ESD pulse waveform (IEC 61000-4-2 network) vertical scale = 10 V/div horizontal scale = 10 ns/div PESD12VS1UJ PESD5V0S1UJ

R 04-09-13Dimensions in mm 0.80 0.65 0.25 0.10 0.5 0.3 2.7 2.3 1.8 1.6 0.40 0.25 1.35 1.15 Marking Orderinginformation OutlineDrawing–SOD -323OutlineDrawing–SOD -323F Ordercode Package Baseqt Deliverymode 3000UMW PESD5V0S1UJ Markingcode TapeandreelSOD-323F UMWPESD12VS1UJ 1R SOD-323F 3000 Tapeandreelwww.umw-ic.com 6 友台半导体有限公司