PEMZ7 PHILIPS | Alldatasheet

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Technical content

Product specification Supersedes data of 2001 Sep 25

2001 Nov 07

2001 Nov 07 2

Philips Semiconductors Product specification NPN/PNP general purpose transistors PEMZ7

FEATURES

  • 300 mW total power dissipation
  • Very small 1.6× 1.2 mm ultra thin package
  • Self alignment during soldering due to straight leads
  • Low collector capacitance
  • Low VCEsat
  • High current capabilities
  • Improved thermal behaviour due to flat leads
  • Reduced required PCB area
  • Reduced pick and place costs.

APPLICATIONS

  • Heavy duty battery powered equipment (automotive, telecom and audio-video) such as motor and lamp drivers
  • V CEsat critical applications such as latest low supply voltage IC applications
  • All battery driven equipment, to save battery power.

DESCRIPTION

NPN/PNP low VCEsat transistor pair in a SOT666 plastic package. MARKING PINNING TYPE NUMBER MARKING CODE PEMZ7 Z7 PIN DESCRIPTION 1, 4 emitter TR1; TR2 2, 5 base TR1; TR2 6, 3 collector TR1; TR2 handbook, halfpage MAM456 13 2 TR1 TR2 6 45 123 46 5 Top view Fig.1 Simplified outline (SOT666) and symbol.

2001 Nov 07 3

Philips Semiconductors Product specification NPN/PNP general purpose transistors PEMZ7 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS Notes 1. Transistor mounted on an FR4 printed-circuit board. 2. The only recommended soldering method is reflow soldering. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per transistor; for the PNP transistor with negative polarity V CBO collector-base voltage open emitter − 15 V VCEO collector-emitter voltage open base − 12 V VEBO emitter-base voltage open collector − 6V IC collector current (DC) − 500 mA ICM peak collector current − 1A IBM peak base current − 100 mA Ptot total power dissipation T amb ≤ 25 °C; note 1 − 200 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Per device Ptot total power dissipation T amb ≤ 25 °C; note 1 − 300 mW SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-a thermal resistance from junction to ambient notes 1 and 2 416 K/W

2001 Nov 07 4

Philips Semiconductors Product specification NPN/PNP general purpose transistors PEMZ7 CHARACTERISTICS Tamb =2 5°C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Per transistor; for the PNP transistor with negative polarity ICBO collector-base cut-off current VCB = 15 V; IE =0 −− 100 nA VCB = 15 V; IE = 0; Tj= 150°C −− 50 µA IEBO emitter-base cut-off current VEB =5V ; IC =0 −− 100 nA hFE DC current gain V CE =2V ; IC =1 0m A 2 0 0 −− VCEsat collector-emitter saturation voltage IC = 200 mA; IB =1 0m A −− 220 mV fT transition frequency I C = 100 mA; VCE =5V ; f = 100 MHzTR1 (NPN) 250 420 − MHz TR2 (PNP) 100 280 − MHz C c collector capacitance V CB = 10 V; IE =Ie = 0; f = 1 MHz TR1 (NPN) − 4.4 6 pF TR2 (PNP) −− 10 pF handbook, halfpage 400 600 200 100 300 500 MHC014 10-1 11 0 IC (mA) hFE 102 103 (1) (2) (3) Fig.2 DC current gain as a function of collector current; typical values. TR1 (NPN); VCE =2V . (1) Tamb = 150°C. (2) Tamb =2 5°C. (3) Tamb = −55 °C. handbook, halfpage (1)(2)(3)(4) (6) (8) IC (mA) VCE (V) 1200 800 400 21 0 468 MLD672 (9) (10) (7) (5) Fig.3 Collector current as a function of collector-emitter voltage; typical values. TR1 (NPN); Tamb =2 5°C. (1) IB = 4.60 mA (2) IB = 4.14 mA (3) IB = 3.68 mA (4) IB = 3.22 mA (5) IB = 2.76 mA (6) IB = 2.30 mA (7) IB = 1.84 mA (8) IB = 1.38 mA (9) IB = 0.92 mA (10) IB = 0.46 mA

2001 Nov 07 5

Philips Semiconductors Product specification NPN/PNP general purpose transistors PEMZ7 handbook, halfpage 200 1200 400 600 800 1000 MLD673 110−1 IC (mA) VBE (mV) 10 10 2 103 (1) (3) (2) Fig.4 Base-emitter voltage as a function of collector current; typical values. TR1 (NPN); VCE =2V . (1) Tamb = −55 °C. (2) Tamb =2 5°C. (3) Tamb = 150°C. handbook, halfpage 200 1200 400 600 800 1000 MHC017 10-1 11 0 1 0 2 103 VBEsat (mV) IC (mA) (1) (2) (3) Fig.5 Base-emitter saturation voltage as a function of collector current; typical values. TR1 (NPN); IC /IB = 20. (1) Tamb = 150°C. (2) Tamb =2 5°C. (3) Tamb = −55 °C. handbook, halfpage 103 102 MHC018 10-1 11 0 IC (mA) VCEsat (mV) 102 103 (1) (2) (3) Fig.6 Collector-emitter saturation voltage as a function of collector current; typical values. TR1 (NPN); IC /IB = 20. (1) Tamb = 150°C. (2) Tamb =2 5°C. (3) Tamb = −55 °C. handbook, halfpage 400 600 200 100 300 500 MHC019 -10-1 -1 -10 IC (mA) hFE -102 -103 (1) (2) (3) Fig.7 DC current gain as a function of collector current; typical values. TR2 (PNP); VCE = −2V . (1) Tamb = 150°C. (2) Tamb =2 5°C. (3) Tamb = −55 °C.

2001 Nov 07 6

Philips Semiconductors Product specification NPN/PNP general purpose transistors PEMZ7 handbook, halfpage (1)(2)(3)(4) (5) (6) (7) (8) (10) IC (mA) VCE (V) −1200 −800 −400 MLD650 (9) Fig.8 Collector current as a function of collector-emitter voltage; typical values. TR2 (PNP); Tamb =2 5°C. (1) IB = 7.0 mA (2) IB = 6.3 mA (3) IB = 5.6 mA (4) IB = 4.9 mA (5) IB = 4.2 mA (6) IB = 3.5 mA (7) IB = 2.8 mA (8) IB = 2.1 mA (9) IB = 1.4 mA (10) IB = 0.7 mA handbook, halfpage −200 −1200 −400 −600 −800 −1000 MLD667 −1−10−1 IC (mA) VBE (mV) −10 −102 −103 (1) (3) (2) Fig.9 Base-emitter voltage as a function of collector current; typical values. TR2 (PNP); VCE = −2V . (1) Tamb = −55 °C. (2) Tamb =2 5°C. (3) Tamb = 150°C. handbook, halfpage -200 -1200 -400 -600 -800 -1000 MHC022 VBEsat (mV) IC (mA) (1) (2) (3) Fig.10 Base-emitter saturation voltage as a function of collector current; typical values. TR2 (PNP); IC /IB = 20. (1) Tamb = 150°C. (2) Tamb =2 5°C. (3) Tamb = −55 °C. handbook, halfpage -103 -102 -10 MHC023 -10-1 -1 -10 IC (mA) VCEsat (mV) -102 -103 (1) (2) (3) Fig.11 Collector-emitter saturation voltage as a function of collector current; typical values. TR2 (PNP); IC /IB = 20. (1) Tamb = 150°C. (2) Tamb =2 5°C. (3) Tamb = −55 °C.

2001 Nov 07 7

Philips Semiconductors Product specification NPN/PNP general purpose transistors PEMZ7 PACKAGE OUTLINE UNIT b p cD E e1 H E Lp w REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE 01-01-04 01-08-27 IEC JEDEC EIAJ mm 0.27 0.17 0.18 0.08 1.7 1.5 1.3 1.1 0.5 e 1.0 1.7 1.5 0.1 y 0.1 DIMENSIONS (mm are the original dimensions) 0.3 0.1 SOT666 bp pin 1 index D e A Lp detail X H E EA S 0 1 2 mm scale A 0.6 0.5 c X 123 456 Plastic surface mounted package; 6 leads SOT666 YS w M A

2001 Nov 07 8

Philips Semiconductors Product specification NPN/PNP general purpose transistors PEMZ7 DATA SHEET STATUS Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was DATA SHEET STATUS (1) PRODUCT STATUS (2) DEFINITIONS Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.

2001 Nov 07 9

Philips Semiconductors Product specification NPN/PNP general purpose transistors PEMZ7 NOTES

2001 Nov 07 10

Philips Semiconductors Product specification NPN/PNP general purpose transistors PEMZ7 NOTES

2001 Nov 07 11

Philips Semiconductors Product specification NPN/PNP general purpose transistors PEMZ7 NOTES

© Koninklijke Philips Electronics N.V. 2001 SCA73 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 Printed in The Netherlands 613514/02/pp12 Date of release:2001 Nov 07 Document order number: 9397 750 09054