PE8550 | DigiCamel IC Datasheet

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faassen] wIRGnILD PE8050/PE8550 7-29-43 eo aeeenea reer NPN-PNP General Purpose ju Ha i Complementary Amplifiers & Output | Drivers : oe . © Veco ... 25 V (Min) PACKAGE © hee ... Outstanding Beta Linearity to 1.0 A PE805O T0-92 © Three hre Groups PEB550 T0-92 © Guaranteed SOA © Complements ... PE8050, (NPN), PE8550, (PNP) ABSOLUTE MAXIMUM RATINGS (Note 1) ‘Temperatures Storage Temperature -55°C to 150°C Operating Junction Temperature 150°C Power Dissipation (Vce = 8.0 V) (Notes 2 & 3) ‘Total Dissipation at 26°C Ambient Temperature 0.625 W i 25°C Case Temperature 1.0W Voltages & Currents Vceo Collector to Emitter Voltage 25V (Note 4) Veeo Collector to Base Voltage 30V Veeo Emitter to Base Voltage 6.0V le Collector Current (Continuous) 15A le Collector Current (Pulsed) 15A ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL | CHARACTERISTIC [MIN [MAX | UNITS TEST CONDITIONS | Voeo Collector to Emitter Breakdown Voltage Vv [lc=10 mA, ls=0 (Note 5) Veso Collector to Base Breakdown Voltage | 30 | | V_|lc=100yA, le=0 Veeo Emitter to Base Breakdown Voltage | 60 | | V_ |le=100uA, o=0 . leao Collector Cutoff Current [ [100 | nA _|Vco=20V, le =0 hre ‘DC Current Gain (Note 5) 50 | 200 Io = 10 MA, Vee = 1.0 65 | 200 Io = 100 mA, Vee = 1.0 V 65 | 200 Ic = 800 mA, Vee = 1.0 V 40 | 200 Ic =1.0 A, Vee = 1.0V Gain Grouping A 65 | 130 lc = 100 MA, Vee = 1.0 V Gain Grouping B 85 | 160 Gain Grouping C 120 | 200 NOTES: 4. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2, These are sleady slate limits. The factory should be consulted on applications involving pulsed or low duly cycle operations. 3. These ratings lve a maximum junction temperature ot 150°C and (0-02) junction-to-case thermal resistance of 125°C/W (derating factor of 5.0 | imW/*C}; junction-to-ambient thermal resistance of 125° G/W (derating factor of 8.0 mW/°C). 4. Rating eters to a high current point where collector to emitter voltage is lowest. 5. Pulse conditions: length = 300 ys: duty cycle = 1%. 6. For product family characteristic curves, reler to Curve Set T124 for PEBOSO & T202 for PEBSSO. 3-132

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aon PNasea/MPS3b69/FTSO3563 Den cent A Schlumberger Company . : NPN Small Signal High Frequency Amplifiers & Oscillators a : © Gre... 15. 4B (Min) @ 200 MHz (PN/FTSO918) PACKAGE © Cos ... 1,7 pF (Max) @ 10 V PNO18 To-92 © NF... 6.0 dB (Max) @ 60 MHz PN3563 T0-92 MPS918 TO-92 ABSOLUTE MAXIMUM RATINGS (Note 1) MPS3563 70-92 ‘ FTSO918 TO-236AA/AB Temperatures FTSO3563 TO-236AA/AB ‘ Storage Temperature -58°C to 150°C Operating Junction Temperature 150°C Power Dissipation (Notes 2 & 3) Total Dissipation at PN/MPS FTSO 25°C Ambient Temperature 0.625W 0.350 W" 65°C Ambient Temperature 0.300 W 25°C Case Temperature 1.0 Voltages & Currents 3563 918 Vceo Collector to Emitter Voltage 12V 12V (Note 4) Veso Collector to Base Voltage 30V 30V Veo Emitter to Base Voltage 2.0V 3.0V le Collector Current 50mA SOMA ELECTRICAL CHARACTERISTICS (25° C Ambient Temperature unless otherwise noted) (Note 6)

3663 MPS918

SYMBOL | CHARACTERISTIC MIN. MAX | MIN MAX |UNITS| TEST CONDITIONS BVceo _| Collector to Base Breakdown | 30 V [tc=100 pA, le =0 Voltage 30 V_|to=10yA, le =0 BVeso | Emitter to Base Breakdown V |le=10pA, lo =0 Voltage leao Collector Cutoff Current | | 60 | | 10 | nA |Voo=15V.e=0 fre DC Current Gain (Note 5) le = 3.0 mA, Vor = 1.0V lc = 8.0 MA, Vee = 10 V Veeown | Collector to Emitter Sustaining) 12 V_ | tc=30mA, lb=0 : Voltage (Notes 4 & 5) Veeisay | Collector to Emitter Saturation V__ | tc=10 mA, le =1.0 mA Voltage (Note 5) Vecsey | Base to Emitter Saturation V_ | ic=10mA, lp=1.0mA Voltage NOTES: so Tyrese ratings are limiting values above which the serviceability of any individual semiconductor device may be impalred. 2. These ere steady state Imits, The factory should be consulted on applications involving pulsed or tow duty cycle operations. 3 Thece ratinge give a meximum junction temperature of 150°C and (T.-92) juncon-to-case thermal resistance of 125° CW (derating factor of 80 MWC), enclon-to-ambient thermal resistance of 200° CIW (derating factor of 60 mW/*C); (TO-286) junction-to-amblent thermal resistance of 357° CAW (derating factor of 28 mW” C). 4. Rating rofers to a high current point where collector to emitter voltage is lowest 5. Pulse conditions: length = 200 ys; duty cycle < 1%. 6. For product family characteristic curves, refer to Curve Set T121 * Package mounted on 99.5% alumina & mm x8 mm x 0.6 mm. ee 3-134 . 1 : e

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PN918/MPssi8/FTsosi8 7-3)-23 PN3563/MPS3563/FTSO3563 $A . ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted) (Note 6) |

3863 MPS918

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T= 31-2 a . ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted) (Note 6) PN918 a a al Ne f = 100 MHz Goo Available Power Gain (neutralized) 15 lc = 6.0 MA, Vea = 12 V, (test circuit 254 for PN918) f = 200 MHz Ree | a (test circuit no. 264) f = 500 MHz . en Ra f= 500 MHz f = 60 kHz, Ra = 4009 a 3-136 . 1 ~ |

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election PN3565/FTSO3565 127-23 FAIRCHILD ° _. NPN Low Level High Gain A Schlumberger Company rat, Amplifiers i | | . © Veco ... 25 V (Min) PACKAGE © hire ... 150-600 @ 1.0 mA PN3565 TO-92 - FTSO3565, TO-236AA/AB ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature -55°C to 150°C Operating Junction Temperature 150°C Power Dissipation (Note 2) eg Total Dissipation at PN FTSO 7” 25°C Ambient Temperature 0.625W 0.350 W* 25°C Case Temperature 1.0W Voltages & Currents Veco Collector to Emitter Voltage 25V (Note 3) Veao Collector to Base Voltage 30V Veso Emitter to Base Voltage 60V le Collector Current 50 mA ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted) (Note 4) SYMBOL] CHARACTERISTIC MIN | MAX_| UNITS TEST CONDITIONS | BVceo _| Collector to Base Breakdown Voltage | 30 | | V__| lc= 100 4A, le=0 BVeso | Emitter to Base Breakdown Voltage | 60 | | V_ | lo=0,le=10uA eso Collector Cutoff Current [| [50 [nA _| Vos =25V, le =0 lego Collector Cutoff Current [30 | uA _| Vos =25V, le =0, Ta= 65°C hre DC Current Gain 150 | 600 lo = 1.0 MA, Vee = 10V 70 bc = 100 pA, Voe = 10 V Vezowwus | Collector to Emitter Sustaining Voltage 25 |_| V__| lo=2.0 mA, ls=0 Vcewav _ | Collector to Emitter Saturation Voltage| (| 0.35 | V_ | Ic=1.0mA, la=0.1 mA : Cov Open Circuit Output Capacitance | | 40 | pF _| le =0, Veo =5.0V, f= 140 kHz ' tie High Frequency Current Gain [20 | 42 | | c= 1.0mA, Voe=5.0V, f=20 MHz i hie Input Resistance [20 | 20 | ka | ic=1.0mA, Voe=5.0V, 1=1.0 kHz . hoe Output Conductance [0.5 | 100 | umhos | tc = 1.0 mA, Voz =5.0 V, f= 1.0 kHz i hee ‘Small Signal Current Gain [120 [750 |_| lo = 1.0 mA, Vor =5.0 V, f= 1.0 kHz , NOTES: 1. These ratings are limiting valuos above which the serviceability of any individual semiconductor device may be impaled. 2. These ratings glve a maximum junction temperature of 160°C and (TO82) junction-lo-case thermal resistance of 125° C/W (derating factor of 80 mW/* Cj; junction-to-ambient thermal resistance of 200° C/W (derating factor of 5.0 mW/*C); (T0236) junction-to-ambient thermal resistance of 257° GAW (derating factor of 28 mW/*C). 3. Raling refers toa high current point where collector to emiter voltage Is lowest. 4. For product family characteristic curves, refer to Curve Set T155. * Package mounted on 99.5% alumina @ mm x 8 mm x08 mm. 3-137

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i SS Snpany pity Small Signal General Purpose 7-44-23 eee . i . | © Vero «.. 30 V (Min) PACKAGE © bre «.. 150-600 @ 10 mA PN3566 0-92 © Complement ... MPS3638A FTSO3566 TO-236AA/AB ABSOLUTE MAXIMUM RATINGS (Note 1) ‘Temperatures Storage Temperature -55°C to 150°C | Operating Junction Temperature 150°C ! Power Dissipation (Notes 2 & 3) Total Dissipation at PN _-FTSO 25°C Ambient Temperature 0.625W 0.350 W* 25°C Case Temperature 1.0W Voltages & Currents Vceo Collector to Emitter Voltage 30V (Note 4) Vcso Collector to Base Voltage 40V Veso Emitter to Base Voltage 5.0V le Collector Current 200 mA ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL] CHARACTERISTIC [win [Max] UNITS TEST CONDITIONS BVeso _| Collector to Base Breakdown Voltage p40 | | V_ |lc=100pA t= 0 BVeso _| Emitter to Base Breakdown Voltage feo {| V_ |te=10uA,le=0 leao Collector Cutoff Current [| 50 | nA | Voo=20V, le=0 loso Collector Cutoff Current [80 | A | Veo = 20V, le = 0, Ta = 75°C . leao Emitter Cutoff Current [| 10 | pA _|Veo=5.0V, lo= 0 hee DG Pulse Current Gain (Note 5) 760 | 600 Te= 10 MA, Vee = 10V 80 lc = 2.0 mA, Vee = 10V noTes: NOTES: ings are Kmiing values above whic the ssrucebiliy of any Incivdual semiconductor device may be impaver, 1 These at sats te The factory should be consulted on application Involving pulsed or low duly eycle peters 2 Toone ao steady tata inte effin amportre of 150 Cand (TO-62} jntionto-case thermal eitanc of 125" CM (orang Bets A TRE at a nt ermal resitance of 200°C eraing factor of 50 mC): (TO-200) junction toamblent hema eustance of 357° CAW (dorating factor of 28 mW/*C). 4, Rating eters oa high current point where coactor to emitter voltage is lowest ©. Pulae conditions: length = 200 ps: duty oyele < 1% €._ For product family characteristic curves, refer to Cue Set TH. Package mounted on 98 6% alumine & mm x 8 mm x 0.6 mm 3-138

. - ~ —_ — : FAIRCHILD SEMICONDUCTOR By DE 34bab74 oo27419 3 | PN3566/FTSO3566 Fr 24. 23 a . ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted) (Note 6) ‘SYMBOL | CHARACTERISTIC MIN TEST CONDITIONS Veewan | Collector to Emitter Saturation Voltage V_ | c= 100 mA, le = 10 mA (Pulsed) (Note 5) Veco | Collector to Emitter Sustaining Voltage V__ | lc =80 mA, le = 0 (pulsed) (Notes 4 & 5) Veeiow | Base to Emitter "On" Voltage V__ | te= 100 mA, Vee = 1.0V : (pulsed) (Note 5) ce : : Con Output Capacitance |__| 28 | pF | Voo=10V, le=0, f= 140 kHz a tie High Frequency Current Gain [20 [35 | To = 30 MA, Vee = 10 V, f= 20 MHz 3-139

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| FAIRGHIED PN3567/FTSO3567 BE PN3569/FTSO3569 A Schlumberger Company . NPN Small Signal General Purpose Amplifiers RY AX : H © Voeo ... 40 V (Min) PACKAGE . t © here ... 100-300 @ 10 mA (3569); 40-120 @ 150 mA (3567) PN3567 TO-92 ‘ © Complement ... MPS4355 PN3569 TO-92 FTSO3567 TO-236AA/AB ; ABSOLUTE MAXIMUM RATINGS (Note 1) FTSO3569 TO-236AA/AB : t _ Storage Temperature -55°C to 150°C. : Operating Junction Temperature 150°C Power Dissipation (Notes 2 & 3) Total Dissipation at PN FTSO 25°C Ambient Temperature 0.625 W 0.350 W* 25°C Case Temperature 1.0 W Voltages & Currents Vceo Collector to Emitter Voltage 40V (Notes 4 & 6) Veso Collector to Base Voltage B0V Veso Emitter to Base Voltage 5.0V Io Collector Current 500 mA lo Base Current 100 mA ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted) (Note 7) 3567 3569 SYMBOL] CHARACTERISTIC MIN MAX} MIN MAX | UNITS. TEST CONDITIONS BVceo Collector to Emitter Breakdown v Ic = 30 mA, Is =0 Voltage (Note 5) : BVceo Collector to Base Breakdown 80 | 80 v Ic = 100 pA, le =O Voltage BVeso Emitter to Base Breakdown Vv le = 10 wA, Ic =O _ Voltage Icao Collector Cutoff Current nA | Ves = 40V, le =O BA Vos = 40 V, le =0, Ta= 75°C leao Emitter Cutoff Current | [25] | 2 [| nA |Ve=40V,lo=0 NOTES: 1. These ratings are tmitng values above which the serviceability of any Individual somiconductor device may be impaled. 2. Those are steady stata limits. The factory should be consulted on applications involving pulsed or low duty cyte pportions, 3. These stings give a maximum juncton temperature of 150°C and (0-22) junction-to-case thermal resistance of 125" C/W (derating factor of 80 inW/*C);junetion-to-ambient thermal resistance of 200° G/W (dering factor of 8.0 mW/"Ci; (0-226) juncionvto-ambiont thermo recavanes ot 357° CM (doraling factor of 28 mW"), 4, Rating refers to high current point where collector to emitter voltage is lowost 5. Pulse conditions: length ~ S00 pa: duly eyete - 1% 6 Applicable 0 to 30 mA. . 7. For product family characteristic curves, refer to Curve Set T¥46. : Package mounted on 99.5% alumina 8 mim x 8 mm x 0 mm, 3-140 i oe

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a ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted) (Note 7) 3567 3569 SYMBOL | CHARACTERISTIC. MIN MAX _|MIN MAX _| UNITS. TEST CONDITIONS ' Dre DC Current Gain (Note 5) 40 120 | 100 le = 150 MA, Voce = 1.0 V : 40 100 Ic = 30 MA, Voce = 1.0 V . Veeisa Collector to Emitter Saturation v Ig = 150 mA, lp = 15 mA 7 Voltage (Note 5) Veewow — | Base to Emitter “On” Voltage i 1 V__ | te = 180 mA, Vee = 1.0 V a (Note 5) z Gx | Goliector to Base Capacitance |__| 20 || 20 | pF | Ves=10V,le=O.1=140KH2 Go| Emitterto Base Capacitance [| eo | | @0_| pF _| Ven=0.5V, lo=0,t=140kHz [rre} Magnitude of Common Emitter lc = 50 MA, Vee = 10 V, Small Signal Current Gain f = 20 MHz 3-141 eee a p Pitewee ve

Product Information

PE8550 specifications and overview.

Summary

NPN-PNP General Purpose Complementary Amplifiers & Output Drivers

Description

NPN-PNP General Purpose Complementary Amplifiers & Output Drivers

Source title PE8550 Datasheet(PDF) - Fairchild Semiconductor

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