Features

Document overview

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Technical content

Features

 IEC61000-4-2(ESD):±18kV Air, ±15kV Contact  IEC61000-4-4(EFT):40A(5/50ns)  IEC61000-4-5(Lightning):3A(8/20μS)  Low leakage current, maximum of 50nA at rated voltage  Ultra low capacitance  Low clamping voltage  Lead free in compliance with EU RoHS2.0 (2011/65/EU & 2015/865/EU directive)  Green molding compound as per IEC61249 Std. . (Halogen Free) Mechanical Data  Case: Molded plastic, DFN 2L  Terminals: Solderable per MIL-STD-750, Method 2026  Approx. Weight: 0.00004 ounces, 0.0011 grams

Applications

 USB 3.0 Data Line Protection  Mobile Phones and accessories  Hand held portable  Digital Cameras  Computer Interfaces Protection  Serial and Parallel Ports Protection  Control Signal Lines Protection Maximum Ratings PARAMETER SYMBOL VALUE UNITS ESD IEC61000-4-2(Air) ESD IEC61000-4-2(Contact) VESD ±18 ±15 kV Operating Junction Temperature Range TJ -55 to +150 oC Storage Temperature Range TSTG -55 to +150 oC

April 15,2017-REV.00 Page 2

Electrical Characteristics

PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS Reverse Stand-Off Voltage (Note 1) VRWM - - - 3.3 V Reverse Breakdown Voltage VBR IBR=1mA 4 - - V Reverse Leakage Current IR VR=3.3V - - 50 nA Clamping Voltage VCL IPP=1A, tP=8/20s - - 9 V IPP=3A, tP=8/20s - - 13 V Clamping Voltage TLP (Note 2) VCL IPP=8A, tP=100ns - 15 - V IPP=16A, tP=100ns - 22 - V Dynamic Resistance RDYN tP=100ns - 0.88 -  Off State Junction Capacitance CJ 0Vdc Bias f=1MHz - 0.3 0.4 pF Note: 1. A transient suppressor is selected according to the working peak reverse voltage(V RWM), which should be equal to or greater than the DC or continuous peak operation voltage level. 2. Testing using Transmission Line Pulse (TLP) conditions: Z0 = 50Ω, tP = 100 ns.

April 15,2017-REV.00 Page 3 TYPICAL CHARACTERISTIC CURVES Fig.1 Typical Junction Capacitance Fig.2 Transmission Line Pulsing (TLP) Measurement Fig.3 Typical Peak Clamping Voltage(8/20s) Fig.4 8/20s Pulse Waveform 0.1 0.2 0.3 0.4 0.5 VR, Reverse Bias Voltage (V) CJ, Junction Capacitance (pF) IO to GND 0 5 10 15 20 25 TLP Curent (A) TLP Volatge (V) IO to GND IPP, Peak Current (A) VC,Clamping Voltage (V) VC, Clamping Voltage (V) IO to GND Percent of IPP Time, μs 0 5 10 15 20 25 30 Rise time 10-90%-8μs 100 50% of IPP@20μs

April 15,2017-REV.00 Page 4 Part No Packing Code Version Mounting Pad Layout Part No Packing Code Package Type Packing Type Marking Version PE1403M1Q_R1_00001 DFN 2L 8K pcs / 7” reel RH Halogen free

April 15,2017-REV.00 Page 5 Disclaimer

  • Reproducing and modifying information of the document is prohibited without permission from Panjit International Inc..
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