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Technical content
- Product profile
1.1 General description
NPN Resistor-Equipped Transistor (RET) family in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
1.2 Features
1.3 Applications
500 mA, 50 V NPN resistor-equipped transistors Rev. 1 — 15 May 2014 Product data sheet SOT23 Table 1. Product overview
applications
1.4 Quick reference data
Table 2. Quick reference data Table 3. Pinning
2 GND (emitter)
Table 4. Ordering information
[2] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint. Table 5. Marking codes Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint. (2) FR4 PCB, single-sided copper, standard footprint. Table 7. Thermal characteristics
Product data sheet Rev. 1 — 15 May 2014 5 of 18 NXP Semiconductors PDTD1xxxT series 500 mA, 50 V NPN resistor-equipped transistors FR4 PCB, single-sided copper, tin-plated and standard footprint Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT23/TO-236AB; typical values FR4 PCB, 4-layer copper, tin-plated and standard footprint. Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT23/TO-236AB; typical values aaa-012060 102 103 Zth(j-a) (K/W) 10-1 10-5 1010-210-4 10210-1 tp (s) 10-3 1031 duty cycle = 1 0.75 0.5 0.33 0.2 0.1 0.05 0.02 0.01 aaa-012061 10-5 1010-210-4 10210-1 tp (s) 10-3 1031 102 103 Zth(j-a) (K/W) duty cycle = 1 0.75 0.5 0.33 0.2 0.1 0.05 0.02 0.01
[1] Characteristics of built-in transistor. Table 8. Characteristics Tamb = 25 C unless otherwise specified.
Product data sheet Rev. 1 — 15 May 2014 7 of 18 NXP Semiconductors PDTD1xxxT series 500 mA, 50 V NPN resistor-equipped transistors VCE = 5 V (1) T amb = 100 C (2) T amb = 25 C (3) T amb = 40 C IC/IB = 20 (1) T amb = 100 C (2) T amb = 25 C (3) T amb = 40 C Fig 4. PDTD143ET: DC current gain as a function of colle ctor current; typical values Fig 5. PDTD143ET: Collec tor-emitter saturation volt age as a function of collector current; typical values VCE = 0.3 V (1) T amb = 40 C (2) T amb = 25 C (3) T amb = 100 C VCE = 5 V (1) T amb = 40 C (2) T amb = 25 C (3) T amb = 100 C Fig 6. PDTD143ET: On-state input voltage as a function of collector current; typical values Fig 7. PDTD143ET: Off-state input voltage as a function of collector current; typical values aaa-012442 102 103 hFE IC (mA) 10-1 10310211 0 (1) (2) (3) aaa-012444 IC (mA) 11 0 310210 10-1 VCEsat (V) 10-2 (1) (2) (3) aaa-012449 102 VI(on) (V) 10-1 IC (mA) 10-1 10310211 0 (1) (2) (3) IC (mA) 10-1 101 aaa-012573 VI(off) (V) 10-1 (1) (2) (3)
Product data sheet Rev. 1 — 15 May 2014 8 of 18 NXP Semiconductors PDTD1xxxT series 500 mA, 50 V NPN resistor-equipped transistors Tamb = 25 C f = 1 MHz; Tamb = 25 C Fig 8. PDTD143ET: Collector current as a function of collector-emitter voltage; typical values Fig 9. PDTD143ET: Collector capacitance as a func tion of collector-base voltage; typical values VCE = 5 V; Tamb = 25 C Fig 10. PDTD143ET: Transition frequency as a function of collector current; typical values of built-in transistor VCE (V) 05 4231 aaa-012435 0.2 0.3 0.1 0.4 0.5 IC (A) IB = 0.35 mA 1.55 0.5 1.1 0.95 0.8 1.4 1.7 0.65 1.25 VCB (V) 05 0 4020 3010 aaa-012440 C c (pF) aaa-012066 102 103 fT (MHz) IC (mA) 10-1 10310211 0
Product data sheet Rev. 1 — 15 May 2014 9 of 18 NXP Semiconductors PDTD1xxxT series 500 mA, 50 V NPN resistor-equipped transistors VCE = 5 V (1) T amb = 100 C (2) T amb = 25 C (3) T amb = 40 C IC/IB = 20 (1) T amb = 100 C (2) T amb = 25 C (3) T amb = 40 C Fig 11. PDTD143XT: DC current gain as a function of colle ctor current; typical values Fig 12. PDTD143XT: Collec tor-emitter saturation volt age as a function of collector current; typical values VCE = 0.3 V (1) T amb = 40 C (2) T amb = 25 C (3) T amb = 100 C VCE = 5 V (1) T amb = 40 C (2) T amb = 25 C (3) T amb = 100 C Fig 13. PDTD143XT: On-state input voltage as a function of collector current; typical values Fig 14. PDTD143XT: Off-state input voltage as a function of collector current; typical values aaa-012441 102 103 hFE IC (mA) 10-1 10310211 0 (1) (2) (3) aaa-012445 IC (mA) 11 0 310210 10-1 VCEsat (V) 10-2 (1) (2) (3) aaa-012450 102 VI(on) (V) 10-1 IC (mA) 10-1 10310211 0 (1) (2) (3) IC (mA) 10-1 101 aaa-012574 VI(off) (V) 10-1 (1) (2) (3)
Product data sheet Rev. 1 — 15 May 2014 10 of 18 NXP Semiconductors PDTD1xxxT series 500 mA, 50 V NPN resistor-equipped transistors Tamb = 25 C f = 1 MHz; Tamb = 25 C Fig 15. PDTD143XT: Collector current as a function of collector-emitter voltage; typical values Fig 16. PDTD143XT: Collector capacitance as a func tion of collector-base voltage; typical values VCE = 5 V; Tamb = 25 C Fig 17. PDTD143XT: Transition frequency as a function of collector current; typical values of built-in transistor VCE (V) 05 4231 aaa-012071 0.2 0.3 0.1 0.4 0.5 IC (A) IB = 0.25 mA 0.4 0.55 0.7 0.85 1.0 1.15 1.3 1.45 1.6 VCB (V) 05 0 4020 3010 aaa-012072 C c (pF) aaa-012066 102 103 fT (MHz) IC (mA) 10-1 10310211 0
Product data sheet Rev. 1 — 15 May 2014 11 of 18 NXP Semiconductors PDTD1xxxT series 500 mA, 50 V NPN resistor-equipped transistors VCE = 5 V (1) T amb = 100 C (2) T amb = 25 C (3) T amb = 40 C IC/IB = 20 (1) T amb = 100 C (2) T amb = 25 C (3) T amb = 40 C Fig 18. PDTD114ET: DC current gain as a function of colle ctor current; typical values Fig 19. PDTD114ET: Collector-emitter saturation volt age as a function of collector current; typical values VCE = 0.3 V (1) T amb = 40 C (2) T amb = 25 C (3) T amb = 100 C VCE = 5 V (1) T amb = 40 C (2) T amb = 25 C (3) T amb = 100 C Fig 20. PDTD114ET: On-state input voltage as a function of collector current; typical values Fig 21. PDTD114ET: Off-state input voltage as a func tion of collector current; typical values aaa-012443 102 103 hFE IC (mA) 10-1 10310211 0 (1) (2) (3) aaa-012446 IC (mA) 11 0 310210 10-1 VCEsat (V) 10-2 (1) (2) (3) aaa-012451 102 VI(on) (V) 10-1 IC (mA) 10-1 10310211 0 (1) (2) (3) IC (mA) 10-1 101 aaa-012575 VI(off) (V) 10-1 (1) (2) (3)
Product data sheet Rev. 1 — 15 May 2014 12 of 18 NXP Semiconductors PDTD1xxxT series 500 mA, 50 V NPN resistor-equipped transistors Tamb = 25 C f = 1 MHz; Tamb = 25 C Fig 22. PDTD114ET: Collector current as a function of collector-emitter voltage; typical values Fig 23. PDTD114ET: Collector capacitance as a func tion of collector-base voltage; typical values VCE = 5 V; Tamb = 25 C Fig 24. PDTD114ET: Transition frequency as a function of collector current; typical values of built-in transistor VCE (V) 05 4231 aaa-012073 0.2 0.3 0.1 0.4 0.5 IC (A) IB = 0.35 mA 0.5 0.65 0.8 0.95 1.1 1.25 1.4 1.55 1.7 VCB (V) 05 0 4020 3010 aaa-012074 C c (pF) aaa-012066 102 103 fT (MHz) IC (mA) 10-1 10310211 0
Product data sheet Rev. 1 — 15 May 2014 13 of 18 NXP Semiconductors PDTD1xxxT series 500 mA, 50 V NPN resistor-equipped transistors 8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. 9. Package outline Fig 25. Package outline PDTD1xxxT series (SOT23/TO-236AB) 04-11-04Dimensions in mm 0.45 0.15 1.9 1.1 0.9 3.0 2.8 2.5 2.1 1.4 1.2 0.48 0.38 0.15 0.09
Product data sheet Rev. 1 — 15 May 2014 14 of 18 NXP Semiconductors PDTD1xxxT series 500 mA, 50 V NPN resistor-equipped transistors 10. Soldering Dimensions in mm Fig 26. Reflow soldering footprint PDTD1xxxT series (SOT23/TO-236AB) Dimensions in mm Fig 27. Wave soldering footprint PDTD1xxxT series (SOT23/TO-236AB) solder lands solder resist occupied area solder paste sot023_fr 0.5 (3×) 0.6 (3×) 0.6 (3×) 0.7 (3×) 3.3 2.9 1.7 1.9 Dimensions in mm solder lands solder resist occupied area preferred transport direction during soldering sot023_fw 2.8 4.5 1.4 4.6 1.4 (2×) 1.2 (2×) 2.2 2.6 Dimensions in mm
Table 9. Revision history
Product data sheet Rev. 1 — 15 May 2014 16 of 18 NXP Semiconductors PDTD1xxxT series 500 mA, 50 V NPN resistor-equipped transistors 12. Legal information
12.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of mu ltiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only . The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. NXP Semiconductors takes no responsibility for the content in this document if provided by an information source outside of NXP Semiconductors. In no event shall NXP Semiconductors be liable fo r any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoe ver, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes t o information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use in automotive applications — This NXP Semiconducto rs product has been qualified for use in automotive applications. Unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications — Applications that are described herein for any of these product s are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and product s using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liabili ty related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors product s are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specificati on for product development. Preliminary [short] data sheet Qualification This document contains data from t he preliminary specification. Product [short] data sheet Production This document contains the product specification.
Product data sheet Rev. 1 — 15 May 2014 17 of 18 NXP Semiconductors PDTD1xxxT series 500 mA, 50 V NPN resistor-equipped transistors No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may b e subject to export control regulations. Export might require a prior authorization from competent authorities. Quick reference data — The Quick reference data is an extract of the product dat a given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Translations — A non-English (translated) version of a document is for refe rence only. The English version shall prevail in case of any discrepancy between the translated and English versions.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
NXP Semiconductors PDTD1xxxT series 500 mA, 50 V NPN resistor-equipped transistors © NXP Semiconductors N.V. 2014. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 15 May 2014 Document identifier: PDTD1XXXT_SER Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. 14. Contents