PDTB123Y PHILIPS | Alldatasheet
Document overview
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Technical content
- Product profile
1.1 General description
500 mA PNP Resistor-Equipped Transistors (RET) family. [1] Also available in SOT54A and SOT54 variant packages (seeSection2).
1.2 Features
1.3 Applications
1.4 Quick reference data
PNP 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kΩ , R2 = 10 kΩ Rev. 01 — 27 April 2005 Product data sheet Table 1: Product overview Type number Package NPN complement Philips JEITA JEDEC PDTB123YK SOT346 SC-59A TO-236 PDTD123YK PDTB123YS [1] SOT54 SC-43A TO-92 PDTD123YS PDTB123YT SOT23 - TO-236AB PDTD123YT ■ Built-in bias resistors ■ Reduces component count ■ Simplifies circuit design ■ Reduces pick and place costs ■ 500 mA output current capability ■ ±10 % resistor ratio tolerance ■ Digital application in automotive and industrial segments ■ Cost-saving alternative for BC807 series in digital applications ■ Controlling IC inputs ■ Switching loads Table 2: Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - −50 V IO output current (DC) - - −500 mA R1 bias resistor 1 (input) 1.54 2.2 2.86 k Ω R2/R1 bias resistor ratio 4.1 4.55 5
9397 750 14905 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 27 April 2005 2 of 10 Philips Semiconductors PDTB123Y series PNP 500 mA resistor-equipped transistors; R1 = 2.2 kΩ , R2 = 10 kΩ 2. Pinning information Table 3: Pinning Pin Description Simplified outline Symbol SOT54 1 input (base) 2 output (collector)
3 GND (emitter)
1 input (base) 2 output (collector) 1 input (base) 2 output (collector) SOT23, SOT346 1 input (base)
2 GND (emitter)
3 output (collector) 001aab347 006aaa148 001aab348 006aaa148 001aab447 006aaa148 006aaa144 sym003
9397 750 14905 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 27 April 2005 3 of 10 Philips Semiconductors PDTB123Y series PNP 500 mA resistor-equipped transistors; R1 = 2.2 kΩ , R2 = 10 kΩ 3. Ordering information [1] Also available in SOT54A and SOT54 variant packages (seeSection2 andSection9). 4. Marking [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. Table 4: Ordering information Type number Package Name Description Version PDTB123YK SC-59A plastic surface mounted package; 3 leads SOT346 PDTB123YS [1] SC-43A plastic single-ended leaded (through hole) package; 3 leads SOT54 PDTB123YT - plastic surface mounted package; 3 leads SOT23 Table 5: Marking codes Type number Marking code[1] PDTB123YK E8 PDTB123YS B123YS PDTB123YT *7Y Table 6: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - −50 V VCEO collector-emitter voltage open base - −50 V VEBO emitter-base voltage open collector - −5V VI input voltage positive - +5 V negative - −12 V I O output current (DC) - −500 mA Ptot total power dissipation Tamb ≤ 25 °C SOT346 [1] - 250 mW SOT54 [1] - 500 mW SOT23 [1] - 250 mW Tstg storage temperature −65 +150 °C Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C
9397 750 14905 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 27 April 2005 4 of 10 Philips Semiconductors PDTB123Y series PNP 500 mA resistor-equipped transistors; R1 = 2.2 kΩ , R2 = 10 kΩ 6. Thermal characteristics [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 7. Characteristics Table 7: Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit R th(j-a) thermal resistance from junction to ambient in free air [1] SOT346 - - 500 K/W SOT54 - - 250 K/W SOT23 - - 500 K/W Table 8: Characteristics Tamb =2 5°C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit ICBO collector-base cut-off current VCB = −40 V; IE =0A - - −100 nA VCB = −50 V; IE =0A - - −100 nA ICEO collector-emitter cut-off current VCE = −50 V; IB =0A - - −0.5 µA IEBO emitter-base cut-off current VEB = −5 V; IC =0A - - −0.65 mA hFE DC current gain V CE = −5 V; IC = −50 mA 70 - - VCEsat collector-emitter saturation voltage IC = −50 mA; IB = −2.5 mA -- −0.3 mV VI(off) off-state input voltage VI(on) on-state input voltage VCE = −0.3 V; IC = −20 mA −0.5 −1.0 −1.4 V R1 bias resistor 1 (input) 1.54 2.2 2.86 k Ω R2/R1 bias resistor ratio 4.1 4.55 5 C c collector capacitance VCB = −10 V; IE =ie =0A ; f = 100 MHz -1 1 -p F
9397 750 14905 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 27 April 2005 5 of 10 Philips Semiconductors PDTB123Y series PNP 500 mA resistor-equipped transistors; R1 = 2.2 kΩ , R2 = 10 kΩ VCE =−5 V (1) Tamb = 100°C (2) Tamb = 25°C (3) Tamb =−40 °C IC /IB = 20 (1) Tamb = 100°C (2) Tamb = 25°C (3) Tamb =−40 °C Fig 1. DC current gain as a function of collector current; typical values Fig 2. Collector-emitter saturation voltage as a function of collector current; typical values VCE =−0.3 V (1) Tamb =−40 °C (2) Tamb = 25°C (3) Tamb = 100°C VCE =−5 V (1) Tamb =−40 °C (2) Tamb = 25°C (3) Tamb = 100°C Fig 3. On-state input voltage as a function of collector current; typical values Fig 4. Off-state input voltage as a function of collector current; typical values 006aaa357 102 103 hFE IC (mA) (1) (2) (3) 006aaa358 IC (mA) −1 −102−10 −10−1 VCEsat (V) −10−2 (1) (2) (3) 006aaa359 IC (mA) -10 VI(on) (V) -10-1 (1) (2) (3) IC (mA) -10-1 -10-1 006aaa360 -10 VI(off) (V) -10-1 (1) (2) (3)
9397 750 14905 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 27 April 2005 6 of 10 Philips Semiconductors PDTB123Y series PNP 500 mA resistor-equipped transistors; R1 = 2.2 kΩ , R2 = 10 kΩ 8. Package outline Fig 5. Package outline SOT346 (SC-59A/TO-236) Fig 6. Package outline SOT54 (SC-43A/TO-92) Fig 7. Package outline SOT54A Fig 8. Package outline SOT54 variant Fig 9. Package outline SOT23 (TO-236AB) 04-11-11Dimensions in mm 3.0 2.5 1.7 1.3 0.26 0.10 1.9 0.50 0.35 1.3 1.0 3.1 2.7 0.6 0.2 04-11-16Dimensions in mm 5.2 5.0 14.5 12.7 4.8 4.4 4.2 3.6 0.45 0.38 0.48 0.40 1.27 2.54 04-06-28Dimensions in mm 5.2 5.0 14.5 12.7 4.8 4.4 4.2 3.6 0.45 0.38 0.48 0.40 2.54 5.08 3 max 05-01-10Dimensions in mm 5.2 5.0 14.5 12.7 4.8 4.4 4.2 3.6 0.45 0.38 0.48 0.40 1.27 1.27 2.54 2.5 max 04-11-04Dimensions in mm 0.45 0.15 1.9 1.1 0.9 3.0 2.8 2.5 2.1 1.4 1.2 0.48 0.38 0.15 0.09
9397 750 14905 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 27 April 2005 7 of 10 Philips Semiconductors PDTB123Y series PNP 500 mA resistor-equipped transistors; R1 = 2.2 kΩ , R2 = 10 kΩ 9. Packing information [1] For further information and the availability of packing methods, seeSection14. Table 9: Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number Package Description Packing quantity 3000 5000 10000 PDTB123YK SOT346 4 mm pitch, 8 mm tape and reel -115 - -135 PDTB123YS SOT54 bulk, straight leads - -412 - SOT54A tape and reel, wide pitch - - -116 tape ammopack, wide pitch - - -126 SOT54 variant bulk, delta pinning - -112 - PDTB123YT SOT23 4 mm pitch, 8 mm tape and reel -215 - -235
9397 750 14905 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 27 April 2005 8 of 10 Philips Semiconductors PDTB123Y series PNP 500 mA resistor-equipped transistors; R1 = 2.2 kΩ , R2 = 10 kΩ 10. Revision history Table 10: Revision history Document ID Release date Data sheet status Change notice Doc. number Supersedes PDTB123Y_SER_1 20050427 Product data sheet - 9397 750 14905 -
Philips Semiconductors PDTB123Y series PNP 500 mA resistor-equipped transistors; R1 = 2.2 kΩ , R2 = 10 kΩ 9397 750 14905 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 27 April 2005 9 of 10 11. Data sheet status [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 12. Definitions Short-form specification —The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 13. Disclaimers Life support —These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes —Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 14. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com Level Data sheet status[1] Product status[2][3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN).
© Koninklijke Philips Electronics N.V. 2005 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 27 April 2005 Document number: 9397 750 14905 Published in The Netherlands Philips Semiconductors PDTB123Y series PNP 500 mA resistor-equipped transistors; R1 = 2.2 kΩ , R2 = 10 kΩ 15. Contents