PDTA114Y NXP | Alldatasheet

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Technical content

Supersedes data of 2003 Sep 09

2004 Aug 02

PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ

2004 Aug 02 2

NXP Semiconductors Product data sheet PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ PDTA114Y series

FEATURES

  • Built-in bias resistors
  • Simplified circuit design
  • Reduction of component count
  • Reduced pick and place costs.

APPLICATIONS

  • General purpose switching and amplification
  • Inverter and interface circuits
  • Circuit driver. QUICK REFERENCE DATA

DESCRIPTION

PNP resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). SYMBOL PARAMETER TYP. MAX. UNIT VCEO collector-emitter voltage − −50 V IO output current (DC) − −100 mA R1 bias resistor 10 − kΩ R2 bias resistor 47 − kΩ PRODUCT OVERVIEW Note 1. * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in China. TYPE NUMBER PACKAGE MARKING CODE NPN COMPLEMENT PHILIPS EIAJ PDTA114YE SOT416 SC-75 36 PDTC114YE PDTA114YEF SOT490 SC-89 37 PDTC114YEF PDTA114YK SOT346 SC-59 54 PDTC114YK PDTA114YM SOT883 SC-101 DF PDTC114YM PDTA114YS SOT54 (TO-92) SC-43 TA114Y PDTC114YS PDTA114YT SOT23 − *29(1) PDTC114YT PDTA114YU SOT323 SC-70 *55(1) PDTC114YU

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NXP Semiconductors Product data sheet PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ PDTA114Y series SIMPLIFIED OUTLINE, SYMBOL AND PINNING TYPE NUMBER SIMPLIFIED OUTLINE AND SYMBOL PINNING PIN DESCRIPTION PDTA114YS 1 base 2 collector 3 emitter PDTA114YE 1 base PDTA114YEF 2 emitter PDTA114YK 3 collector PDTA114YT PDTA114YU PDTA114YM 1 base 2 emitter 3 collector handbook, halfpage MAM338 handbook, halfpage MDB271Top view 1 2 handbook, halfpage MDB267 Bottom view

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NXP Semiconductors Product data sheet PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ PDTA114Y series LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). Notes 1. Refer to standard mounting conditions. 2. Reflow soldering is the only recommended soldering method. 3. Refer to SOT883 standard mounting conditions; FR4 with 60 μm copper strip line. THERMAL CHARACTERISTICS Notes 1. Refer to standard mounting conditions. 2. Reflow soldering is the only recommended soldering method. 3. Refer to SOT883 standard mounting conditions; FR4 with 60 μm copper strip line. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − −50 V VCEO collector-emitter voltage open base − −50 V VEBO emitter-base voltage open collector − −10 V VI input voltage positive − +6 V negative − −40 V IO output current (DC) − −100 mA ICM peak collector current − −100 mA Ptot total power dissipation Tamb ≤ 25 °C SOT54 note 1 − 500 mW SOT23 note 1 − 250 mW SOT346 note 1 − 250 mW SOT323 note 1 − 200 mW SOT490 notes 1 and 2 − 250 mW SOT883 notes 2 and 3 − 250 mW SOT416 note 1 − 150 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient in free air SOT54 note 1 250 K/W SOT23 note 1 500 K/W SOT346 note 1 500 K/W SOT323 note 1 625 K/W SOT490 note 1 500 K/W SOT883 notes 2 and 3 500 K/W SOT416 note 1 833 K/W

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NXP Semiconductors Product data sheet PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ PDTA114Y series CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector-base cut-off current VCB = −50 V; IE = 0 − − −100 nA ICEO collector-emitter cut-off current VCE = −30 V; IB = 0 − − −1 μA VCE = −30 V; IB = 0; Tj = 150 °C − − −50 μA IEBO emitter-base cut-off current VEB = −5 V; IC = 0 − − −150 μA hFE DC current gain VCE = −5 V; IC = −5 mA 100 − − VCEsat collector-emitter saturation voltage IC = −5 mA; IB = −0.25 mA − − −100 mV Vi(off) input-off voltage IC = −100 μA; VCE = −5 V − −0.7 −0.5 V Vi(on) input-on voltage IC = −1 mA; VCE = −0.3 V −1.4 −0.8 − V R1 input resistor 7 10 13 kΩ resistor ratio 3.7 4.7 5.7 Cc collector capacitance IE = ie = 0; VCB = −10 V; f = 1 MHz − − 3 pF

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NXP Semiconductors Product data sheet PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ PDTA114Y series PACKAGE OUTLINES UNIT b p cD E e1 HE Lp wv REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE 05-07-28 06-03-16 IEC JEDEC JEITA mm 0.33 0.23 0.2 0.1 1.7 1.5 0.95 0.75 0.5 e 1.0 1.7 1.5 0.10.1 DIMENSIONS (mm are the original dimensions) 0.5 0.3 SOT490 SC-89 bp D e A Lp detail X HE E w M v M A B AB 0 1 2 mm scale A 0.8 0.6 c X Plastic surface-mounted package; 3 leads SOT49 0

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NXP Semiconductors Product data sheet PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ PDTA114Y series UNIT A1 bp cD E e1 HE Lp Qw v REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC JEITA mm 0.50 0.35 0.26 0.10 3.1 2.7 1.7 1.3 0.95 e 1.9 3.0 2.5 0.33 0.23 0.20.2 DIMENSIONS (mm are the original dimensions) 0.6 0.2 SOT346 TO-236 SC-59A bp D e A Lp Q detail X HE E w M v M A B A B 0 1 2 mm scale A 1.3 1.0 0.1 0.013 c X Plastic surface-mounted package; 3 leads SOT34 6 04-11-11 06-03-16

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NXP Semiconductors Product data sheet PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ PDTA114Y series UNIT A1 max.A(1) bb 1 e1eL L 1 REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC JEITA mm 0.50 0.46 0.20 0.12 0.55 0.470.03 0.62 0.55 0.35 0.65 DIMENSIONS (mm are the original dimensions) Note 1. Including plating thickness 0.30 0.22 0.30 0.22 SOT883 SC-101 03-02-05 03-04-03 DE 1.02 0.95 L E b A D 0 0.5 1 mm scale Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm SOT88 3 e

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NXP Semiconductors Product data sheet PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ PDTA114Y series UNIT A REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC JEITA mm 5.2 5.0 b 0.48 0.40 c 0.45 0.38 D 4.8 4.4 d 1.7 1.4 E 4.2 3.6 L 14.5 12.7 e 2.54 1.27 (1) max. 2.5 0.66 0.55 DIMENSIONS (mm are the original dimensions) Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. SOT54 TO-92 SC-43A 04-06-28 04-11-16 A L 0 2.5 5 mm scale b c D b1 L1 d E Plastic single-ended leaded (through hole) package; 3 leads SOT5 4 e

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NXP Semiconductors Product data sheet PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ PDTA114Y series UNIT A1 max. bp cD E e1 HE Lp Qw v REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE 04-11-04 06-03-16 IEC JEDEC JEITA mm 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 0.95 e 1.9 2.5 2.1 0.55 0.45 0.10.2 DIMENSIONS (mm are the original dimensions) 0.45 0.15 SOT23 TO-236AB bp D e A Lp Q detail X HE E w M v M A B AB 0 1 2 mm scale A 1.1 0.9 c X Plastic surface-mounted package; 3 leads SOT2 3

2004 Aug 02 11

NXP Semiconductors Product data sheet PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ PDTA114Y series UNIT max bp cD E e1 HE Lp Qw v REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC JEITA mm 0.11.1 0.8 0.4 0.3 0.25 0.10 2.2 1.8 1.35 1.15 0.65 e 1.3 2.2 2.0 0.23 0.13 0.20.2 DIMENSIONS (mm are the original dimensions) 0.45 0.15 SOT323 SC-70 w Mbp D e A B Lp Q detail X c HE E v M A AB y 0 1 2 mm scale A X Plastic surface-mounted package; 3 leads SOT32 3 04-11-04 06-03-16

2004 Aug 02 12

NXP Semiconductors Product data sheet PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ PDTA114Y series UNIT max bp cD E e1 HE Lp Qw REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC JEITA mm 0.1 0.30 0.15 0.25 0.10 1.8 1.4 0.9 0.7 0.5 e 1 1.75 1.45 0.2 v 0.2 DIMENSIONS (mm are the original dimensions) 0.45 0.15 0.23 0.13 SOT416 SC-75 w Mbp D e A Lp Q detail X HE E AB B v M A 0 0.5 1 mm scale A 0.95 0.60 c X Plastic surface-mounted package; 3 leads SOT41 6 04-11-04 06-03-16

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NXP Semiconductors Product data sheet PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ PDTA114Y series DATA SHEET STATUS Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. DISCLAIMERS General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license ⎯ Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control ⎯ This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.

For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Printed in The Netherlands R75/04/pp14 Date of release: 2004 Aug 02 Document order number: 9397 750 13647