PDTA114T PHILIPS | Alldatasheet

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Technical content

Product specification Supersedes data of 2003 Sep 09

2004 Aug 02

PNP resistor-equipped transistors; R1 = 10 kΩ , R2 = open

2004 Aug 02 2

Philips Semiconductors Product specification PNP resistor-equipped transistors; R1 = 10 kΩ , R2 = open PDTA114T series

FEATURES

  • Built-in bias resistors
  • Simplified circuit design
  • Reduction of component count
  • Reduced pick and place costs.

APPLICATIONS

  • General purpose switching and amplification
  • Inverter and interface circuits
  • Circuit driver. QUICK REFERENCE DATA

DESCRIPTION

PNP resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). SYMBOL PARAMETER TYP. MAX. UNIT VCEO collector-emitter voltage −− 50 V IO output current (DC)−− 100 mA R1 bias resistor 10 − kΩ R2 open −−− PRODUCT OVERVIEW Note 1. * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in China. TYPE NUMBER PACKAGE MARKING CODE NPN COMPLEMENT PHILIPS EIAJ PDTA114TE SOT416 SC-75 11 PDTC114TE PDTA114TEF SOT490 SC-89 46 PDTC114TEF PDTA114TK SOT346 SC-59 23 PDTC114TK PDTA114TM SOT883 SC-101 DE PDTC114TM PDTA114TS SOT54 (TO-92) SC-43 TA114T PDTC114TS PDTA114TT SOT23 − *11 (1) PDTC114TT PDTA114TU SOT323 SC-70 *23 (1) PDTC114TU

2004 Aug 02 3

Philips Semiconductors Product specification PNP resistor-equipped transistors; R1 = 10 kΩ , R2 = open PDTA114T series SIMPLIFIED OUTLINE, SYMBOL AND PINNING TYPE NUMBER SIMPLIFIED OUTLINE AND SYMBOL PINNING PIN DESCRIPTION PDTA114TS 1 base 2 collector 3 emitter PDTA114TE 1 base PDTA114TEF 2 emitter PDTA114TK 3 collector PDTA114TT PDTA114TU PDTA114TM 1 base 2 emitter 3 collector handbook, halfpage MAM352 handbook, halfpage MDB272Top view 1 2 MDB268 handbook, halfpage Bottom view

2004 Aug 02 4

Philips Semiconductors Product specification PNP resistor-equipped transistors; R1 = 10 kΩ , R2 = open PDTA114T series LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). Notes 1. Refer to standard mounting conditions. 2. Reflow soldering is the only recommended soldering method. 3. Refer to SOT883 standard mounting conditions; FR4 with 60µm copper strip line. THERMAL CHARACTERISTICS Notes 1. Refer to standard mounting conditions. 2. Reflow soldering is the only recommended soldering method. 3. Refer to SOT883 standard mounting conditions; FR4 with 60µm copper strip line. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V CBO collector-base voltage open emitter −− 50 V VCEO collector-emitter voltage open base −− 50 V VEBO emitter-base voltage open collector −− 5V IO output current (DC) −− 100 mA ICM peak collector current −− 100 mA Ptot total power dissipation T amb ≤ 25 °C SOT54 note 1 − 500 mW SOT23 note 1 − 250 mW SOT346 note 1 − 250 mW SOT323 note 1 − 200 mW SOT416 note 1 − 150 mW SOT883 notes 2 and 3 − 250 mW SOT490 notes 1 and 2 − 250 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-a thermal resistance from junction to ambient in free air SOT54 note 1 250 K/W SOT23 note 1 500 K/W SOT346 note 1 500 K/W SOT323 note 1 625 K/W SOT416 note 1 833 K/W SOT883 notes 2 and 3 500 K/W SOT490 notes 1 and 2 500 K/W

2004 Aug 02 5

Philips Semiconductors Product specification PNP resistor-equipped transistors; R1 = 10 kΩ , R2 = open PDTA114T series CHARACTERISTICS Tamb =2 5°C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector-base cut-off current VCB = −50 V; IE =0 −−− 100 nA ICEO collector-emitter cut-off current VCE = −30 V; IB =0 −−− 1 µA VCE = −30 V; IB = 0; Tj= 150°C −−− 50 µA IEBO emitter-base cut-off current V EB = −5 V; IC =0 −−− 100 nA hFE DC current gain V CE = −5 V; IC = −1 mA 200 −− VCEsat collector-emitter saturation voltage IC = −10 mA; IB = −0.5 mA −−− 150 mV R1 input resistor 7 10 13 k Ω C c collector capacitance I E =ie = 0; VCB = −10 V; f = 1 MHz−− 3p F

2004 Aug 02 6

Philips Semiconductors Product specification PNP resistor-equipped transistors; R1 = 10 kΩ , R2 = open PDTA114T series PACKAGE OUTLINES UNIT A 1 max bp cD E e1 H E Lp Qw REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ mm 0.1 0.30 0.15 0.25 0.10 1.8 1.4 0.9 0.7 0.5 e 1 1.75 1.45 0.2 v 0.2 DIMENSIONS (mm are the original dimensions) 0.45 0.15 0.23 0.13 SOT416 SC-75 w Mbp D e A Lp Q detail X H E E AB B v M A 0 0.5 1 mm scale A 0.95 0.60 c X Plastic surface mounted package; 3 leads SOT416 97-02-28

2004 Aug 02 7

Philips Semiconductors Product specification PNP resistor-equipped transistors; R1 = 10 kΩ , R2 = open PDTA114T series UNIT A 1 bp cD E e1 H E Lp Qw v REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ mm 0.50 0.35 0.26 0.10 3.1 2.7 1.7 1.3 0.95 e 1.9 3.0 2.5 0.33 0.23 0.20.2 DIMENSIONS (mm are the original dimensions) 0.6 0.2 SOT346 TO-236 SC-59 bp D e A Lp Q detail X H E E w M v M A B A B 0 1 2 mm scale A 1.3 1.0 0.1 0.013 c X Plastic surface mounted package; 3 leads SOT346 98-07-17

2004 Aug 02 8

Philips Semiconductors Product specification PNP resistor-equipped transistors; R1 = 10 kΩ , R2 = open PDTA114T series UNIT A 1 max.A (1) bb 1 e1eL L 1 REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC JEITA mm 0.50 0.46 0.20 0.12 0.55 0.470.03 0.62 0.55 0.35 0.65 DIMENSIONS (mm are the original dimensions) Note 1. Including plating thickness 0.30 0.22 0.30 0.22 SOT883 SC-101 03-02-05 03-04-03 DE 1.02 0.95 L E b A D 0 0.5 1 mm scale Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm SOT883 e

2004 Aug 02 9

Philips Semiconductors Product specification PNP resistor-equipped transistors; R1 = 10 kΩ , R2 = open PDTA114T series UNIT A REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC JEITA mm 5.2 5.0 b 0.48 0.40 c 0.45 0.38 D 4.8 4.4 d 1.7 1.4 E 4.2 3.6 L 14.5 12.7 e 2.54 1.27 L1(1) max. 2.5 0.66 0.55 DIMENSIONS (mm are the original dimensions) Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. SOT54 TO-92 SC-43A 97-02-28 04-06-28 A L 0 2.5 5 mm scale b c D b1 L1 d E Plastic single-ended leaded (through hole) package; 3 leads SOT54 e

2004 Aug 02 10

Philips Semiconductors Product specification PNP resistor-equipped transistors; R1 = 10 kΩ , R2 = open PDTA114T series UNIT A 1 max. bp cD E e1 H E Lp Qw v REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE 97-02-28 99-09-13 IEC JEDEC EIAJ mm 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 0.95 e 1.9 2.5 2.1 0.55 0.45 0.10.2 DIMENSIONS (mm are the original dimensions) 0.45 0.15 SOT23 TO-236AB bp D e A Lp Q detail X H E E w M v M A B AB 0 1 2 mm scale A 1.1 0.9 c X Plastic surface mounted package; 3 leads SOT23

2004 Aug 02 11

Philips Semiconductors Product specification PNP resistor-equipped transistors; R1 = 10 kΩ , R2 = open PDTA114T series UNIT A 1 max bp cD E e1 H E Lp Qw v REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ mm 0.11.1 0.8 0.4 0.3 0.25 0.10 2.2 1.8 1.35 1.15 0.65 e 1.3 2.2 2.0 0.23 0.13 0.20.2 DIMENSIONS (mm are the original dimensions) 0.45 0.15 SOT323 SC-70 w Mbp D e A B Lp Q detail X c H E E v M A AB y 0 1 2 mm scale A X Plastic surface mounted package; 3 leads SOT323 97-02-28

2004 Aug 02 12

Philips Semiconductors Product specification PNP resistor-equipped transistors; R1 = 10 kΩ , R2 = open PDTA114T series UNIT b p cD E e1 H E Lp wv REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE 98-10-23 IEC JEDEC EIAJ mm 0.33 0.23 0.2 0.1 1.7 1.5 0.95 0.75 0.5 e 1.0 1.7 1.5 0.10.1 DIMENSIONS (mm are the original dimensions) 0.5 0.3 SOT490 SC-89 bp D e A Lp detail X H E E w M v M A B AB 0 1 2 mm scale A 0.8 0.6 c X Plastic surface mounted package; 3 leads SOT490

2004 Aug 02 13

Philips Semiconductors Product specification PNP resistor-equipped transistors; R1 = 10 kΩ , R2 = open PDTA114T series DATA SHEET STATUS Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. LEVEL DATA SHEET STATUS PRODUCT STATUS (2)(3) DEFINITION I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.

© Koninklijke Philips Electronics N.V. 2004 SCA76 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 Printed in The Netherlands R75/06/pp14 Date of release:2004 Aug 02 Document order number: 9397 750 13646