PDEB2310L HUIXIN | Alldatasheet

Document overview

  • Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
  • PDF pages: 6

Technical content

Features

Applications

 MB / VGA / Vcore  POL Applications  SMPS 2nd SR  Li-Battery Protection Absolute Maximum Ratings Tc=25℃ unless otherwise noted Thermal Characteristics DFN2X2-6L Pin Configuration D S G D D D D G S S D S D D D D G

Potens semiconductor corp. Ver.1.08 PDEB2310L V 20V N-Channel MOSFETs Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250μA 20 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.02 --- V/℃ IDSS Drain-Source Leakage Current VDS=20V , VGS=0V , TJ=25℃ --- --- 1 μA VDS=16V , VGS=0V , TJ=125℃ --- --- 10 μA IGSS Gate-Source Leakage Current VGS=±10V , VDS=0V --- --- ±10 μA On Characteristics RDS(ON) Static Drain-Source On-Resistance VGS=4.5V , ID=5A --- 10 13 m VGS=1.8V , ID=2A --- 15 21 m VGS(th) Gate Threshold Voltage VGS=VDS , ID =250μA 0.3 0.6 1 V △VGS(th) VGS(th) Temperature Coefficient --- -2 --- mV/℃ Dynamic and switching Characteristics Qg Total Gate Charge2 , 3 VDS=10V , VGS=4.5V , ID=5A --- 16.9 26 nC Qgs Gate-Source Charge2 , 3 --- 1.1 3 Qgd Gate-Drain Charge2 , 3 --- 4 7 Td(on) Turn-On Delay Time2 , 3 VDD=10V , VGS=4.5V , RG=25 ID=1A --- 6.8 13 ns Tr Rise Time2 , 3 --- 20 38 Td(off) Turn-Off Delay Time2 , 3 --- 41.8 79 Tf Fall Time2 , 3 --- 13.2 25 Ciss Input Capacitance VDS=10V , VGS=0V , F=1MHz --- 1020 1480 pF Coss Output Capacitance --- 160 240 Crss Reverse Transfer Capacitance --- 110 160 Rg Gate resistance VGS=0V, VDS=0V, F=1MHz --- 2 4  Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- 9.9 A ISM Pulsed Source Current --- --- 19.8 A VSD Diode Forward Voltage VGS=0V , IS=1A , TJ=25℃ --- --- 1 V Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. The data tested by pulsed , pulse width ≦ 300μs , duty cycle ≦ 2%. 3. Essentially independent of operating temperature. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Drain-Source Diode Characteristics and Maximum Ratings

Potens semiconductor corp. Ver.1.08 PDEB2310L V 20V N-Channel MOSFETs 0 1 2 3 4 5 VGS=1.2V VGS=1.5V VGS=1.8V VGS=2.5V VGS=4.5V 25 50 75 100 125 150 0 1 2 3 4 5 Tc=25℃ ID=5A 2 3 4 5 6 7 Tc=25℃ VGS=1.8V VGS=2.5V VGS=4.5V ID , Continuous Drain Current (A) Fig.1 Typical Output Characteristics ID , Continuous Drain Current (A) TC , Case Temperature (℃) Fig.2 Continuous Drain Current vs. TC Normalized On Resistance TJ , Junction Temperature (℃) Fig.3 Normalized RDSON vs. TJ Normalized Gate Threshold V oltage TJ , Junction Temperature (℃) Fig.4 Normalized Vth vs. TJ RDS(ON) , Turn-On Resistance (mohm) Fig.5 Turn-On Resistance vs. VGS Fig.6 Turn-On Resistance vs. ID RDS(ON) , Turn-On Resistance (mohm) VDS ,Drain to Source V oltage (V) VGS , Gate to Source V oltage (V) ID , Drain Current (A)

Potens semiconductor corp. Ver.1.08 PDEB2310L V 20V N-Channel MOSFETs Fig.10 Maximum Safe Operation Area Fig.11 Switching Time Waveform Fig.8 Gate Charge Characteristics Fig.12 Gate Charge Waveform 100 1000 0.1 1 10 Ciss Coss Crss 0 4 8 12 16 ID=5A VDS=10V 0.01 0.1 100 0.1 1 10 TC=25℃ DC 100ms 10ms 100μs 10μs 1ms VGS 10V / 4.5V Qg QgdQgs Gate Charge Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10% 0.01 0.1 NOTES: DUTY FACTOR: D = t1/t2SINGLE PULSE 0.5 0.2 0.1 0.05 0.02 0.01 VDS , Drain to Source V oltage (V) Qg , Gate Charge (nC) Normalized Thermal Response VGS , Gate to Source V oltage (V) (mohm) Fig.9 Normalized Transient Impedance Square Wave Pulse Duration (s) VDS , Drain to Source V oltage (V) ID , Continuous Drain Current (A) Capacitance (pF) Fig.7 Capacitance Characteristics

Potens semiconductor corp. Ver.1.08 PDEB2310L V 20V N-Channel MOSFETs Symbol Dimensions In Millimeters Dimensions In Inches MAX MIN MAX MIN A 0.800 0.500 0.031 0.019 A2 0.250 0.145 0.010 0.006 b 0.350 0.250 0.014 0.010 D 2.100 1.900 0.083 0.075 D1 1.050 0.800 0.041 0.031 D2 0.430 0.250 0.017 0.010 D3 0.200BSC 0.008BSC D4 0.200BSC 0.008BSC E 2.100 1.900 0.083 0.075 E1 1.250 0.800 0.049 0.031 E2 0.750 0.460 0.029 0.018 e 0.650BSC 0.026BSC L 0.350 0.225 0.014 0.009 DFN2X2-6L PACKAGE INFORMATION

Potens semiconductor corp. Ver.1.08 PDEB2310L V 20V N-Channel MOSFETs RECOMMENDED LAND PATTERN DFN2X2-6L unit : mm 0.65 0.30 0.30 0.60 1.60 1.725 0.325 2.05 0.90 0.95