PDB3912L HUIXIN | Alldatasheet

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Technical content

Features

Absolute Maximum Ratings Tc=25℃ unless otherwise noted Thermal Characteristics DFN2X2-6L Pin Configuration

Applications

D D G S S D G S  MB / VGA / Vcore  POL Applications  SMPS 2nd SR D S D D D D G

Potens semiconductor corp. Ver.1.03 PDB3912L 30V N-Channel MOSFETs Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250µA 30 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.04 --- V/℃ IDSS Drain-Source Leakage Current VDS=30V , VGS=0V , TJ=25℃ --- --- 1 µA VDS=24V , VGS=0V , TJ=125℃ --- --- 10 µA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA On Characteristics RDS(ON) Static Drain-Source On-Resistance3 VGS=10V , ID=4A --- 15.5 19 m VGS=4.5V , ID=3A --- 20.5 27 m VGS(th) Gate Threshold Voltage VGS=VDS , ID =250µA 1.2 1.6 2.5 V △VGS(th) VGS(th) Temperature Coefficient --- -4 --- mV/℃ gfs Forward Transconductance VDS=10V , ID=2A --- 4 --- S Dynamic and switching Characteristics Qg Total Gate Charge2 , 3 VDS=15V , VGS=10V , ID=4A --- 5.2 7.8 nC Qgs Gate-Source Charge2 , 3 --- 0.6 0.9 Qgd Gate-Drain Charge2 , 3 --- 2 3 Td(on) Turn-On Delay Time2 , 3 VDD=15V , VGS=10V , RG=6 ID=4A --- 2.8 4.2 ns Tr Rise Time2 , 3 --- 7.2 11 Td(off) Turn-Off Delay Time2 , 3 --- 15.8 24 Tf Fall Time2 , 3 --- 4.6 7 Ciss Input Capacitance VDS=15V , VGS=0V , F=1MHz --- 490 750 pF Coss Output Capacitance --- 80 120 Crss Reverse Transfer Capacitance --- 55 90 Rg Gate resistance VGS=0V, VDS=0V, f=1MHz --- 2.2 ---  Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- 8 A ISM Pulsed Source Current3 --- --- 16 A VSD Diode Forward Voltage3 VGS=0V , IS=1A , TJ=25℃ --- --- 1 V trr Reverse Recovery Time VR=30V,IS=8A di/dt=100A/µs, TJ=25℃ --- 130 --- ns Qrr Reverse Recovery Charge --- 200 --- nC Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. The data tested by pulsed , pulse width ≦ 300µs , duty cycle ≦ 2%. 3. Essentially independent of operating temperature. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Drain-Source Diode Characteristics and Maximum Ratings

Potens semiconductor corp. Ver.1.03 PDB3912L 30V N-Channel MOSFETs Fig.1 Continuous Drain Current vs. TJ Fig.3 Normalized Vth vs. TJ TJ , Junction Temperature (℃) ID , Continuous Drain Current (A) Normalized On Resistance Fig.2 Normalized RDSON vs. TJ TJ , Junction Temperature (℃) Normalized Gate Threshold V oltage VGS , Gate to Source V oltage (V) Qg , Gate Charge (nC) Fig.4 Gate Charge Waveform Normalized Thermal Response Square Wave Pulse Duration (s) ID , Continuous Drain Current (A) VDS , Drain to Source V oltage (V) Fig.6 Maximum Safe Operation Area Fig.5 Normalized Transient Response TJ , Junction Temperature (℃)

Potens semiconductor corp. Ver.1.03 PDB3912L 30V N-Channel MOSFETs Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10% VGS 10V / 4.5V Qg QgdQgs Gate Charge Fig.8 Gate Charge Waveform Fig.7 Switching Time Waveform

Potens semiconductor corp. Ver.1.03 PDB3912L 30V N-Channel MOSFETs Symbol Dimensions In Millimeters Dimensions In Inches MAX MIN MAX MIN A 0.800 0.500 0.031 0.019 A2 0.250 0.145 0.010 0.006 b 0.350 0.250 0.014 0.010 D 2.100 1.900 0.083 0.075 D1 1.050 0.800 0.041 0.031 D2 0.430 0.250 0.017 0.010 D3 0.200BSC 0.008BSC D4 0.200BSC 0.008BSC E 2.100 1.900 0.083 0.075 E1 1.250 0.800 0.049 0.031 E2 0.750 0.460 0.029 0.018 e 0.650BSC 0.026BSC L 0.350 0.225 0.014 0.009 DFN2X2-6L PACKAGE INFORMATION

Potens semiconductor corp. Ver.1.03 PDB3912L 30V N-Channel MOSFETs RECOMMENDED LAND PATTERN DFN2X2-6L unit : mm 0.65 0.30 0.30 0.60 1.60 1.725 0.325 2.05 0.90 0.95