PDB3910L HUIXIN | Alldatasheet

Document overview

  • Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
  • PDF pages: 6

Technical content

Features

Absolute Maximum Ratings Tc=25℃ unless otherwise noted Thermal Characteristics DFN2X2-6L Pin Configuration

Applications

D D G S S D G S  MB / VGA / Vcore  POL Applications  SMPS 2nd SR D S D D D D G

Potens semiconductor corp. Ver.1.07 PDB3910L 30V N-Channel MOSFETs Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250μA 30 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.04 --- V/℃ IDSS Drain-Source Leakage Current VDS=30V , VGS=0V , TJ=25℃ --- --- 1 μA VDS=24V , VGS=0V , TJ=125℃ --- --- 10 μA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA On Characteristics RDS(ON) Static Drain-Source On-Resistance3 VGS=10V , ID=6A --- 10.2 13 m VGS=4.5V , ID=4A --- 13.3 18 m VGS(th) Gate Threshold Voltage VGS=VDS , ID =250μA 1.2 1.8 2.5 V △VGS(th) VGS(th) Temperature Coefficient --- -4 --- mV/℃ Dynamic and switching Characteristics Qg Total Gate Charge3 , 4 VDS=15V , VGS=10V , ID=5A --- 10.7 16 nC Qgs Gate-Source Charge3 , 4 --- 1.7 2.6 Qgd Gate-Drain Charge3 , 4 --- 2.5 5 Td(on) Turn-On Delay Time3 , 4 VDD=15V , VGS=10V , RG=6 ID=5A --- 3.8 6 ns Tr Rise Time3 , 4 --- 10 15 Td(off) Turn-Off Delay Time3 , 4 --- 22 33 Tf Fall Time3 , 4 --- 6.6 10 Ciss Input Capacitance VDS=15V , VGS=0V , F=1MHz --- 750 1150 pF Coss Output Capacitance --- 120 180 Crss Reverse Transfer Capacitance --- 90 140 Rg Gate resistance VGS=0V, VDS=0V, F=1MHz --- 2.8 ---  Symbol Parameter Conditions Min. Typ. Max. Unit EAS Single Pulse Avalanche Energy VDD=25V, L=0.1mH, IAS=4A 0.8 --- --- mJ Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- 10 A ISM Pulsed Source Current3 --- --- 20 A VSD Diode Forward Voltage3 VGS=0V , IS=1A , TJ=25℃ --- --- 1 V trr Reverse Recovery Time VR=30V, IS=10A di/dt=100A/µs, TJ=25℃ --- 120 --- ns Qrr Reverse Recovery Charge --- 175 --- nC Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. VDD=25V,VGS=10V,L=0.1mH,IAS=16A.,RG=25,Starting TJ=25℃. 3. The data tested by pulsed , pulse width ≦ 300µs , duty cycle ≦ 2%. 4. Essentially independent of operating temperature. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Drain-Source Diode Characteristics and Maximum Ratings Guaranteed Avalanche Energy

Potens semiconductor corp. Ver.1.07 PDB3910L 30V N-Channel MOSFETs 25 50 75 100 125 150 0.4 0.6 0.8 1.2 1.4 -50 0 50 100 150 0.5 1.5 2.5 -50 0 50 100 150 0 2 4 6 8 10 VGS=2.5V VGS=3V VGS=2.7V 0 2 4 6 8 10 Tc=25℃ ID=4A ID=6A 3 4 5 6 7 Tc=25℃ VGS=4.5V VGS=6V VGS=10V ID , Continuous Drain Current (A) Fig.1 Typical Output Characteristics ID , Continuous Drain Current (A) TC , Case Temperature (℃) Fig.2 Continuous Drain Current vs. TC Normalized On Resistance TJ , Junction Temperature (℃) Fig.3 Normalized RDSON vs. TJ Normalized Gate Threshold V oltage TJ , Junction Temperature (℃) Fig.4 Normalized Vth vs. TJ RDS(ON) , Turn-On Resistance (mohm) Fig.5 Turn-On Resistance vs. VGS Fig.6 Turn-On Resistance vs. ID RDS(ON) , Turn-On Resistance (mohm) VDS ,Drain to Source V oltage (V) VGS , Gate to Source V oltage (V) ID , Drain Current (A)

Potens semiconductor corp. Ver.1.07 PDB3910L 30V N-Channel MOSFETs Fig.10 Maximum Safe Operation Area Fig.11 Switching Time Waveform Fig.12 EAS Waveform Fig.8 Gate Charge Characteristics 0.01 0.1 100 0.1 1 10 100 TC=25℃ DC 100ms 10ms 100μs 10μs 1ms Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10% 0.01 0.1 NOTES: DUTY FACTOR: D = t1/t2SINGLE PULSE 0.5 0.2 0.1 0.05 0.02 0.01 IAS VGS BVDSS VDD EAS= 1

2 L x IAS

0.1 1 10 Ciss Coss Crss 0 3 6 9 12 ID=5A VDS=15V VDS , Drain to Source V oltage (V) Qg , Gate Charge (nC) Normalized Thermal Response VGS , Gate to Source V oltage (V) (mohm) Fig.9 Normalized Transient Impedance Square Wave Pulse Duration (s) VDS , Drain to Source V oltage (V) ID , Continuous Drain Current (A) Capacitance (pF) Fig.7 Capacitance Characteristics

Potens semiconductor corp. Ver.1.07 PDB3910L 30V N-Channel MOSFETs Symbol Dimensions In Millimeters Dimensions In Inches MAX MIN MAX MIN A 0.800 0.500 0.031 0.019 A2 0.250 0.145 0.010 0.006 b 0.350 0.250 0.014 0.010 D 2.100 1.900 0.083 0.075 D1 1.050 0.800 0.041 0.031 D2 0.430 0.250 0.017 0.010 D3 0.200BSC 0.008BSC D4 0.200BSC 0.008BSC E 2.100 1.900 0.083 0.075 E1 1.250 0.800 0.049 0.031 E2 0.750 0.460 0.029 0.018 e 0.650BSC 0.026BSC L 0.350 0.225 0.014 0.009 DFN2X2-6L PACKAGE INFORMATION

Potens semiconductor corp. Ver.1.07 PDB3910L 30V N-Channel MOSFETs RECOMMENDED LAND PATTERN DFN2X2-6L unit : mm 0.65 0.30 0.30 0.60 1.60 1.725 0.325 2.05 0.90 0.95