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Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

Features

  • Pb−Free, Halogen Free and RoHS compliant.
  • Low R DS(on) to Minimize Conduction Losses.
  • Ohmic Region Good RDS(on) Ratio.
  • Optimized Gate Charge to Minimize Switching Losses.

Applications

  • Protection Circuits Applications.
  • Logic/Load Switch Circuits Applications. ABSOLUTE MAXIMUM RATINGS (T A = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage V DS 30 V Gate-Source Voltage V GS ±20 V Continuous Drain Current2 TC = 25 °C ID A TC = 100 °C 40 Pulsed Drain Current1 I DM 120 Avalanche Current I AS 25 Avalanche Energy L = 0.1mH E AS 31 mJ Power Dissipation TC = 25 °C PD 48 W TC = 100 °C 19 Junction & Storage Temperature Range T J, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case RJC 2.6 °C / W Junction-to-Ambient RJA 62.5 1Pulse width limited by maximum junction temperature. 2Package limitation current is 39A 1. GATE 2. DRAIN 3. SOURCE PRODUCT SUMMARY V(BR)DSS R DS(ON) I D 30V 6.2mΩ 63A

REV1.1 G-19-4 N-Channel Enhancement Mode Field Effect Transistor PD6B2BA TO-252 Halogen-Free & Lead-Free NIKO-SEM ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITMIN TYP MAX STATIC Drain-Source Breakdown Voltage V (BR)DSS VGS = 0V, ID = 250A 30 V Gate Threshold Voltage V GS(th) VDS = VGS, ID = 250A 1.3 1.6 2.3 Gate-Body Leakage I GSS V DS = 0V, VGS = ±20V ±100 nA Zero Gate Voltage Drain Current I DSS VDS = 24V, VGS = 0V 1 VDS = 20V, VGS = 0V, TJ = 125 °C 10 Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 15A 5.7 9 mΩVGS = 10V , ID = 20A 4.7 6.2 Forward Transconductance1 g fs V DS = 5V, ID = 20A 75 S DYNAMIC Input Capacitance C iss VGS = 0V, VDS = 15V, f = 1MHz 992 pFOutput Capacitance C oss 189 Reverse Transfer Capacitance C rss 122 Gate Resistance R g V GS = 0V, VDS = 0V, f = 1MHz 2 Ω Total Gate Charge2 Qg(VGS=10V) VDS = 15V , ID = 20A nC Qg(VGS=4.5V) 12 Gate-Source Charge2 Q gs 2.3 Gate-Drain Charge2 Q gd 7.2 Turn-On Delay Time2 t d(on) VDS = 15V ID  20A, VGS = 10V, RGEN =6Ω nS Rise Time2 t r 46 Turn-Off Delay Time2 t d(off) 37 Fall Time2 t f 44 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current3 I S 40 A Forward Voltage1 V SD I F = 20A, VGS = 0V 1.2 V Reverse Recovery Time t rr IF = 20A, dlF/dt = 100A / S 11.5 nS Reverse Recovery Charge Q rr 2 nC 1Pulse test : Pulse Width  300 sec, Duty Cycle  2％. 2Independent of operating temperature. 3Package limitation current is 39A

REV1.1 G-19-4 N-Channel Enhancement Mode Field Effect Transistor PD6B2BA TO-252 Halogen-Free & Lead-Free NIKO-SEM 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=20A CISS COSS CRSS 200 400 600 800 1000 1200 0 5 10 15 20 25 30 25℃ 125℃ -20℃ 012345 0.004 0.008 0.012 0.016 0.02 2468 1 0 ID=20A 0.003 0.006 0.009 0.012 0.015 0 6 12 18 24 30 VGS=10V VGS=4.5V 0123456 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=2.7V VGS=3V Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Capacitance Characteristic C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) On-Resistance VS Temperature On-Resistance VS Gate-To-Source RDS(ON)ON-Resistance(OHM) VGS, Gate-To-Source Voltage(V) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A)

REV1.1 G-19-4 N-Channel Enhancement Mode Field Effect Transistor PD6B2BA TO-252 Halogen-Free & Lead-Free NIKO-SEM single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJC = 2.6 ℃/W 3.TJ-TC = P*RthJC(t) 4.RthJC(t) = r(t)*RthJC DC 100ms 10ms 1ms 100 1000 0.1 1 10 100 NOTE : 1.VGS= 10V 2.TC=25˚C 3.RθJC = 2.6˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) 120 180 240 300 0.001 0.01 0.1 1 10 100 Single Pulse RθJC = 2.6˚C/W TC=25˚C 25℃150℃ 0.1 100 0 5 10 15 20 25 VDS=15V ID=20A Gate charge Characteristics Qg , Total Gate Charge(nC) VGS , Gate-To-Source Voltage(V) Source-Drain Diode Forward Voltage VSD, Source-To-Drain Voltage(V) IS , Source Current(A) Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec]