RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
Document overview
- Manufacturer or author: STMICROELECTRONICS
- PDF pages: 22
Technical content
Datasheet sections
- 1 Electrical data
- 1.1 Maximum ratings
- 1.2 Thermal data
- 2 Electrical characteristics
- 2.1 Static
- 2.2 Dynamic
- 2.3 Moisture sensitivity level
- 3 Impedances
- 4 Typical performance
- 5 Test circuit
- 6 Common source s-parameter
- 7 Package mechanical data
- 8 Revision history
Features
■ Excellent thermal stability ■ Common source configuration ■ POUT = 70 W with 14.7dB gain @945 MHz/28 V ■ New RF plastic package
Description
The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF . Device’s superior linearity performance makes it an ideal solution for base station applications. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294). Figure 1. Pin connection Table 1. Device summary
1 Electrical data
1.1 Maximum ratings
1.2 Thermal data
Table 2. Absolute maximum ratings (TCASE = 25°C) Table 3. Thermal data
2 Electrical characteristics
2.1 Static
2.2 Dynamic
2.3 Moisture sensitivity level
Table 4. Static Table 5. Dynamic Table 6. Moisture sensitivity level
3 Impedances
Figure 2. Current conventions Table 7. Impedance data (PD57070S)
4 Typical performance
Figure 3. Capacitance vs supply voltage Figure 4. Drain current vs gate source Figure 5. Gate-source voltage vs Figure 6. Output power vs input power
960 MHz
945 MHz
890 MHz
925 MHz
Figure 7. Power gain vs output power Figure 8. Efficiency vs output power Figure 9. Input return loss vs output power Figure 10. Output power vs gate-source
Figure 11. Output power vs bias current Figure 12. Efficiency vs bias current Figure 13. Output power vs supply voltage Figure 14. Efficiency vs supply voltage
890 MHz 945 MHz
925 MHz 960 MHz
5 Test circuit
Figure 15. Test circuit schematic Note: 1 Dimensions at component symbols are reference for component placement. 3 Dimensions of input and output component from edge of transmission lines.
Table 8. Test circuit component part list Board Roger, ultra lam 2000, THK 0.030”, εr = 2.55 2oz. ED Cu 2 sides.
6 Common source s-parameter
Table 9. S-parameter for PD57070S-E (V DS = 28 V IDS = 500 mA)
Table 10. S-parameter PD57070S-E (V DS = 28 V IDS = 1 A)
Table 11. S-parameter for PD57070S-E (V DS = 28 V IDS = 2 A)
Table 12. S-parameter for PD57070S-E (V DS = 28 V IDS = 3 A)
7 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.
Figure 18. Package dimensions PowerSO-10RF formed lead Table 13. PowerSO-10RF formed lead (Gull Wing) mechanical data
Figure 19. Package dimensions PowerSO-10RF straight lead Table 14. PowerSO-10RF straight lead mechanical data
Figure 20. Tube information
Figure 21. Reel information
8 Revision history
Table 15. Document revision history 13-Jul-2006 1 Initial release. 03-Jun-2010 2 Added: Table 6: Moisture sensitivity level.