PD57002-E STMICROELECTRONICS | Alldatasheet

Document overview

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Technical content

Datasheet sections

  • 1 Electrical data
  • 1.1 Maximum ratings
  • 1.2 Thermal data
  • 2 Electrical Characteristics
  • 2.1 Static
  • 2.2 Dynamic
  • 3 Impedance
  • 4 Typical performance
  • 5 Common source s-parameter
  • 5.1 PD57002 (VDS = 28V IDS = 75mA)
  • 5.2 PD57002 (VDS = 28V IDS = 150mA)
  • 5.5 PD57002S (VDS = 28V IDS = 75mA)
  • 5.6 PD57002S (VDS = 28V IDS = 150mA)
  • 6 Package mechanical data
  • 7 Revision history

RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features ■ Excellent thermal stability ■ Common source configuration ■ POUT = 2W with 15dB gain @ 960MHz / 28V ■ New RF plastic package

Description

The PD57002 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1GHz. The PD57002 is designed for high gain and broadband performance operating in common source mode at 28 V. It is ideal for digital cellular BTS applications requiring high linearity. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294) Pin connection PowerSO-10RF (formed lead) PowerSO-10RF (straight lead) Gate Source Drain Order codes Part number Package Packing PD57002-E PowerSO-10RF (formed lead) Tube PD57002S-E PowerSO-10RF (straight lead) Tube

1 Electrical data

1.1 Maximum ratings

1.2 Thermal data

Table 1. Absolute maximum ratings (TCASE = 25°C) Table 2. Thermal data

2 Electrical Characteristics

2.1 Static

2.2 Dynamic

Table 3. Static Table 4. Dynamic

3 Impedance

Figure 1. Current conventions Table 5. Impedance data

4 Typical performance

Figure 2. Capacitance vs supply voltage Figure 3. Drain current vs Figure 4. Gate-source voltage vs

Figure 5. Output power vs input power Figure 6. Input return loss vs output power Figure 7. Power gain vs output power Figure 8. Efficiency vs output power

960 MHz

925 MHz

945 MHz

Figure 9. Output power vs drain voltage Figure 10. Efficiency vs drain voltage Figure 11. Output power vs drain current Figure 12. Efficiency vs drain current

960 MHz 945 MHz

Figure 13. Output power vs

5 Common source s-parameter

5.1 PD57002 (VDS = 28V IDS = 75mA)

Table 6. S-parameter

5.2 PD57002 (VDS = 28V IDS = 150mA)

Table 7. S-parameter

Table 8. S-parameter

Table 9. S-parameter

5.5 PD57002S (VDS = 28V IDS = 75mA)

Table 10. S-parameter

5.6 PD57002S (VDS = 28V IDS = 150mA)

Table 11. S-parameter

Table 12. S-parameter

Table 13. S-parameter

6 Package mechanical data

In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com

Figure 14. Package dimensions Table 14. PowerSO-10RF Formed lead (Gull Wing) Mechanical data

Figure 15. Package dimensions Table 15. PowerSO-10RF Straight Lead Mechanical data

Figure 16. Tube information

7 Revision history

Table 16. Revision history