PD55035-E STMICROELECTRONICS | Alldatasheet

Document overview

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Technical content

Datasheet sections

  • 1 Electrical data
  • 1.1 Maximum ratings
  • 1.2 Thermal data
  • 2 Electrical Characteristics
  • 2.1 Static
  • 2.2 Dynamic
  • 3 Impedance
  • 4 Typical performance
  • 5 Test circuit
  • 6 Typical performance 175MHz
  • 7 Common source s-parameter
  • 8 Package mechanical data
  • 9 Revision history

RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features ■ Excellent thermal stability ■ Common source configuration ■ POUT = 35W with 16.9dB gain @ 500MHz / 12.5V ■ New RF plastic package

Description

The PD55035 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. PD55035 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF . PD55035’s superior linearity performance makes it an ideal solution for car mobile radio. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294) Pin connection PowerSO-10RF (formed lead) PowerSO-10RF (straight lead) Gate Source Drain Order codes Part number Package Packing PD55035-E PowerSO-10RF (formed lead) Tube PD55035S-E PowerSO-10RF (straight lead) Tube PD55035TR-E PowerSO-10RF (formed lead) Tape and reel PD55035STR-E PowerSO-10RF (straight lead) Tape and reel

1 Electrical data

1.1 Maximum ratings

1.2 Thermal data

Table 1. Absolute maximum ratings (TCASE = 25°C) Table 2. Thermal data

2 Electrical Characteristics

2.1 Static

2.2 Dynamic

Table 3. Static Table 4. Dynamic

3 Impedance

Figure 1. Current conventions Table 5. Impedance data

4 Typical performance

Figure 2. Capacitance vs supply voltage Figure 3. Drain current vs Figure 4. Gate-source voltage vs Figure 5. Output power vs input power

520 MHz

Figure 6. Power gain vs output power Figure 7. Efficiency vs output power Figure 8. Input return loss vs output power Figure 9. Output power vs bias current

480 MHz 520 MHz

500 MHz

480 MHz

Figure 10. Efficiency vs bias current Figure 11. Output power vs supply voltage Figure 12. Efficiency vs supply voltage Figure 13. Output power vs gate voltage

5 Test circuit

Figure 14. 500MHz test circ uit schematic (engineering) Table 6. Test circuit component part list

6 Typical performance 175MHz

Figure 15. Output power vs input power Figure 16. Power gain vs output power Figure 17. Efficiency vs output power Figure 18. Input return loss vs output power

Figure 19. 175MHz test circuit schematic (engineering) Table 7. 175MHz test circuit component part list

7 Common source s-parameter

Table 8. S-parameter

Table 9. S-parameter

Table 10. S-parameter

Table 11. S-parameter

8 Package mechanical data

In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com

Figure 20. Package dimensions Table 12. PowerSO-10RF Formed lead (Gull Wing) Mechanical data

Figure 21. Package dimensions Table 13. PowerSO-10RF Straight Lead Mechanical data

Figure 22. Tube information

Figure 23. Reel information

9 Revision history

Table 14. Revision history 11-May-2006 1 Initial release.