PD55015-PD55015S STMICROELECTRONICS | Alldatasheet

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Technical content

N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs

  • EXCELLENT THERMAL STABILITY
  • COMMON SOURCE CONFIGURATION
  • POUT = 15 W with 13.5 dB gain @ 500 MHz / 12.5V
  • NEW RF PLASTIC PACKAGE

DESCRIPTION

The PD55015 is a common source N-Channel, en- hancement-mode, lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12V in common source mode at frequencies of up to 1GHz. PD55015 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS tech- nology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD55015’s su- perior linearity performance makes it an ideal so- lution for car mobile radio. The PowerSO-10 plastic package, designed to of- fer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. PowerSO-10RF (Formed Lead) ORDER CODE BRANDING XPD55015 PowerSO-10RF (Straight Lead) ORDER CODE BRANDING PD55015 PD55015S XPD55015S ABSOLUTE MAXIMUM RATINGS (TCASE =2 5O C) Symbol Parameter Value Unit V(BR)DSS Drain Source Voltage 40 V V GS Gate-Source Voltage ±20 V ID Drain Current 5 A PDISS Power Dissipation (@ Tc = 700C) 73 W Tj Max. Operating Junction Temperature 165 0C TSTG Storage Temperature -65 to 165 0C THERMAL DATA R th(j-c) Junction-Case Thermal Resistance 1.3 0C/W

Ω Zdl Ω 480 1.43 - j1.27 1.47 + j.65 500 1.62 - j1.05 1.49 + j.58 520 1.57 - j.91 1.35 +j.36 PIN CONNECTION SOURCE DRAINGATE SC15200 ELECTRICAL SPECIFICATION (TCASE =2 50C) STATIC Symbol Parameter Min. Typ. Max. Unit IDSS VGS =0V V DS =2 8V 1 µA IGSS VGS =2 0V V DS =0V 1 µA V GS(Q) VDS =1 0V I D = 150 mA 2.0 5.0 V VDS(ON) VGS =1 0V I D = 2.5 A 0.8 V gFS VDS =1 0V I D = 2.5 A 2.0 2.5 mho C ISS VGS =0V V DS = 12.5 V f = 1 MHz 89 pF C OSS VGS =0V V DS = 12.5 V f = 1 MHz 60 pF C RSS VGS =0V V DS = 12.5 V f = 1 MHz 6.5 pF DYNAMIC Symbol Parameter Min. Typ. Max. Unit POUT f = 500 MHz V DD = 12.5 V I DQ =1 5 0m A 15 W G PS f = 500 MHz V DD = 12.5 V P OUT =1 5W I DQ =1 5 0m A 13.5 dB η D f = 500 MHz V DD = 12.5 V P OUT =1 5W I DQ =1 5 0m A 50 % LOAD Mismatch f = 500 MHz V DD = 15.5 V P OUT =1 5W I DQ =1 5 0m A ALL PHASE ANGLES 20:1 VSWR PD55015 Frequency MHz Zin Ω Zdl Ω 480 2.13 - j1.09 1.55 + j.34 500 1.95 - j.31 1.63 - j.25 520 1.83 - j.70 1.43 + j.30 D S Typical Input Impedance Zin G ZDL Typical Drain Load Impedance SC13140 IMPEDANCE DATA

Capacitance vs. Drain Voltage 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) 100 1000C, CAPACITANCE (pF) Ciss Coss Crss f=1M H z Drain Current vs. Gate Voltage 2.5 3 3.5 4 4.5 5 Vgs, GATE-SOURCE VOLTAGE (V) 0.5 1.5 2.5 3.5 Id, DRAIN CURRENT (A) VDS =1 0V Gate-Source Volatge vs. Case Temperature -25 0 25 50 75 Tc, CASE TEMPERATURE ( °C) 0.96 0.98 1.02 1.04VGS, GATE-SOURCE VOLTAGE (NORMALIZED) ID =.25 A ID =1 A ID = 1.5A ID =2 A ID =3 A VDS =1 0V TYPICAL PERFORMANCE

Output Power vs. Input Power Pin, INPUT POWER (W) 18Pout, OUTPUT POWER (W) VDD =1 2 . 5V IDQ =15 0m A 480M Hz 500MHz 520MHz Power Gain vs. Output Power 0 2 4 6 8 10 12 14 16 18 Pout, OUTPUT POWER (W) 18Gp, POWER GAIN (dB) VDD =12 .5V IDQ =15 0mA 480MHz 500MHz 520MHz Drain Efficiency vs. Output Power 0 2 4 6 8 10 12 14 16 18 Pout, OUTPUT POWER (W) 70Nd, DRAIN EFFICIENCY (%) VDD =12 . 5V IDQ =15 0m A 480MHz 500MHz 520MHz Return Loss vs. Output Power 02468 1 0 1 2 1 4 1 6 1 8 Pout, OUTPUT POWER (W) -40 -30 -20 -10 Rtl, RETURN LOSS (dB) VDD =12 .5V IDQ =15 0mA 480MHz 500MHz 520MHz Output Power vs. Bias Current 0 200 400 600 800 1000 Idq, BIAS CURRENT (mA) 20Pout, OUTPUT POWER (W) VDD =1 2 . 5V Pin=0.8W 480MHz 500MHz 520MHz Drain Efficiency vs. Bias Current 0 200 400 600 800 1000 Idq, BIAS CURRENT (mA) 70Nd, DRAIN EFFICIENCY (%) VDD =12 .5V Pin=0.8 W 480MHz 500MHz 520MHz TYPICAL PERFORMANCE PD55015

Pin, INPUT POWER (W) 18Pout, OUTPUT POWER (W) VDD =1 2 . 5V IDQ =1 5 0m A 480MHz 500MHz 520MHz 02468 1 0 1 2 1 4 1 6 1 8 Pout, OUTPUT POWER (W) 70Nd, DRAIN EFFICIENCY (%) VDD =12 .5V IDQ =15 0m A

480 MHz

500 MHz

520 MHz

Output Power vs. Input Power Output Power vs. Drain Voltage 7 8 9 1 01 11 21 31 41 51 61 7 VDS, DRAIN-SOURCE VOLTAGE (V) 25Pout, OUTPUT POWER (W) Id q=150m A Pin=0.8 W 480MHz 500MHz 520MHz Drain Efficency vs. Drain Voltage 7 8 9 1 01 11 21 31 41 51 61 7 VDS, DRAIN-SOURCE VOLTAGE (V) 70Nd, DRAIN EFFICIENCY (%) Id q=150m A Pin=0.8 W 480MHz 500MHz 520MHz Output Power vs. Gate Bias Voltage 0 0.5 1 1.5 2 2.5 3 3.5 VGS, GATE BIAS VOLTAGE (V) 20Pout, OUTPUT POWER (W) VDD =12 .5V Pin= 0.8W 480MHz 500MHz 520MHz TYPICAL PERFORMANCE Power Gain vs. Output Power 0 2 4 6 8 10 12 14 16 18 Pout, OUTPUT POWER (W) 18Gp, POWER GAIN (dB) VDD =12 .5V IDQ =1 5 0m A 480MHz 500MHz 520MHz Drain Efficiency vs. Output Power PD55015S

Return Loss vs. Output Power 024681 0 1 2 1 4 1 6 1 8 Pout, OUTPUT POWER (W) -40 -30 -20 -10 Rtl, RETURN LOSS (dB) VDD =12 .5V IDQ =1 5 0m A 480MHz 500MHz 520MHz 520MHz Output Power vs. Bias Current 0 200 400 600 800 1000 Idq, BIAS CURRENT (mA) 20Pout, OUTPUT POWER (W) VDD =1 2 . 5V Pin=0.5 W 480MHz 500MHz 520M Hz Drain Efficiency vs. Bias Current 0 200 400 600 800 1000 Idq, BIAS CURRENT (mA) 70Nd, DRAIN EFFICIENCY (%) VDD =1 2 . 5V Pin=0.5 W 480MHz 500MHz 520MHz Output Power vs. Drain Voltage 7 8 9 1 01 11 21 31 41 51 61 7 VDS, DRAIN-SOURCE VOLTAGE (V) 25Pout, OUTPUT POWER (W) Idq=15 0mA Pin=0.5W 480MHz 500MHz 520MHz Drain Efficency vs. Drain Voltage 7 8 9 10 11 12 13 14 15 16 17 VDS, DRAIN-SOURCE VOLTAGE (V) 70Nd, DRAIN EFFICIENCY (%)Idq=150m A Pin=0.5W 480MHz 500MHz 520MHz Output Power vs. Gate Bias Voltage 0 0.5 1 1.5 2 2.5 3 3.5 VGS, GATE BIAS VOLTAGE (V) 20Pout, OUTPUT POWER (W) VDD =12 .5V Pin= 0.5W 480MHz 500MHz 520MHz TYPICAL PERFORMANCE

TEST CIRCUIT COMPONENT PART LIST B1,B2 FERRITE BEAD R2 1k Ω, 1W CHIP RESISTOR C1,C12 300pF, 100 mil CHIP CAPACITOR R3 33 kΩ, 1W CHIP RESISTOR C2,C3,C4,C11, C12,C13 1 TO 20 pF TRIMMER CAPACITOR Z1 0.471” X 0.080” MICROSTRIP C6,C18 pF 100 mil CHIP CAP Z2 1.082” X 0.080” MICROSTRIP C9,C15 10µF, 50V ELECTROLYTIC CAPACITOR Z3 0.372” X 0.080” MICROSTRIP C8,C16 0.1mF, 100 mil CHIP CAP Z4,Z5 0.260” X 0.223” MICROSTRIP C7,C17 1,000pF 100 mil CHIP CAP Z6 0.050” X 0.080” MICROSTRIP C5, C10 33pF, 100 mil CHIP CAP Z7 0.551” X 0.080” MICROSTRIP L1 56nH, 7 TURN, COILCRAFT Z8 0.825” X 0.080” MICROSTRIP N1,N2 TYPE N FLANGE MOUNT Z9 0.489” X 0.080” MICROSTRIP R1 15 Ω , 1W CHIP RESISTOR BOARD ROGER, ULTRA LAM 2000 THK 0.030”εr=2 . 5 5 2oz ED Cu 2 SIDES

6.4 inches 4i n c h e s TEST CIRCUITTEST CIRCUIT TEST CIRCUIT PHOTOMASTER

PowerSO-10RF (Straight Lead) MECHANICAL DATA PowerSO-10RF (Formed Lead) MECHANICAL DATA

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