PD44164095B

PD44164095B_15 RENESAS | Alldatasheet

Document overview

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• PDF pages: 35

Technical content

Features

• 1.8 ± 0.1 V power supply
• 165-pin PLASTIC BGA (13 x 15)
• HSTL interface
• PLL circuitry for wide output data valid window and future frequency scaling
• Separate independent read and write data ports
• DDR read or write operation initiated each cycle
• Pipelined double data rate operation
• Separate data input/output bus
• Two-tick burst for low DDR transaction size
• Two input clocks (K and K#) for precise DDR timing at clock rising edges only
• Two output clocks (C and C#) for precise flight time and clock skew matching-clock and data delivered together to receiving device
• Internally self-timed write control
• Clock-stop capability. Normal operation is restored in 20 μs after clock is resumed.
• User programmable impedance output (35 to 70 Ω)
• Fast clock cycle time : 3.3 ns (300 MHz), 3.5 ns (287 MHz), 4.0 ns (250 MHz), 5.0 ns (200 MHz)
• Simple control logic for easy depth expansion
• JTAG 1149.1 compatible test access port R10DS0016EJ0200 Rev.2.00 October 6, 2011

μPD44164095B, μPD44164185B R10DS0016EJ0200 Rev.2.00 Page 2 of 34 October 6, 2011

Ordering Information

Part No. Organization (word x bit) Cycle time Clock frequency Operating Ambient Temperature Package μPD44164095BF5-E33-EQ3-A 2M x 9 3.3ns 300MHz Ta = 0 to 70 °C 165-pin μPD44164095BF5-E35-EQ3-A 3.5ns 287MHz PLASTIC BGA μPD44164095BF5-E40-EQ3-A 4.0ns 250MHz (13 x 15) μPD44164095BF5-E50-EQ3-A 5.0ns 200MHz Lead-free μPD44164185BF5-E33-EQ3-A 1M x 18 3.3ns 300MHz μPD44164185BF5-E35-EQ3-A 3.5ns 287MHz μPD44164185BF5-E40-EQ3-A 4.0ns 250MHz μPD44164185BF5-E50-EQ3-A 5.0ns 200MHz μPD44164095BF5-E33-EQ3 2M x 9 3.3ns 300MHz Ta = 0 to 70 °C 165-pin μPD44164095BF5-E35-EQ3 3.5ns 287MHz PLASTIC BGA μPD44164095BF5-E40-EQ3 4. 0ns 250MHz (13 x 15) μPD44164095BF5-E50-EQ3 5.0ns 200MHz Lead μPD44164185BF5-E33-EQ3 1M x 18 3.3ns 300MHz μPD44164185BF5-E35-EQ3 3.5ns 287MHz μPD44164185BF5-E40-EQ3 4.0ns 250MHz μPD44164185BF5-E50-EQ3 5.0ns 200MHz μPD44164095BF5-E33Y-EQ3-A 2M x 9 3.3ns 300MHz Ta = −40 to 85°C 165-pin μPD44164095BF5-E35Y-EQ3-A 3.5ns 287MHz PLASTIC BGA μPD44164095BF5-E40Y-EQ3-A 4.0ns 250MHz (13 x 15) μPD44164095BF5-E50Y-EQ3-A 5.0ns 200MHz Lead-free μPD44164185BF5-E33Y-EQ3-A 1M x 18 3.3ns 300MHz μPD44164185BF5-E35Y-EQ3-A 3.5ns 287MHz μPD44164185BF5-E40Y-EQ3-A 4.0ns 250MHz μPD44164185BF5-E50Y-EQ3-A 5.0ns 200MHz μPD44164095BF5-E33Y-EQ3 2M x 9 3.3ns 300MHz Ta = −40 to 85°C 165-pin μPD44164095BF5-E35Y-EQ3 3.5ns 287MHz PLASTIC BGA μPD44164095BF5-E40Y-EQ3 4.0ns 250MHz (13 x 15) μPD44164095BF5-E50Y-EQ3 5.0ns 200MHz Lead μPD44164185BF5-E33Y-EQ3 1M x 18 3.3ns 300MHz μPD44164185BF5-E35Y-EQ3 3.5ns 287MHz μPD44164185BF5-E40Y-EQ3 4.0ns 250MHz μPD44164185BF5-E50Y-EQ3 5.0ns 200MHz

μPD44164095B, μPD44164185B R10DS0016EJ0200 Rev.2.00 Page 3 of 34 October 6, 2011 Pin Arrangement 165-pin PLASTIC BGA (13 x 15) (Top View) [μPD44164095B] 2M x 9 1 2 3 4 5 6 7 8 9 10 11 A CQ# VSS/72M A R, W# NC K# NC/144M LD# A VSS/36M CQ B NC NC NC A NC/288M K BW0# A NC NC Q4 C NC NC NC V SS A A A V SS NC NC D4 D NC D5 NC V SS V SS V SS V SS V SS NC NC NC E NC NC Q5 V DDQ V SS V SS V SS V DDQ NC D3 Q3 F NC NC NC V DDQ V DD V SS V DD V DDQ NC NC NC G NC D6 Q6 V DDQ V DD V SS V DD V DDQ NC NC NC H DLL# V REF V DDQ V DDQ V DD V SS V DD V DDQV DDQ V REF ZQ J NC NC NC V DDQ V DD V SS V DD V DDQ NC Q2 D2 K NC NC NC V DDQ V DD V SS V DD V DDQ NC NC NC L NC Q7 D7 V DDQ V SS V SS V SS V DDQ NC NC Q1 M NC NC NC V SS V SS V SS V SS V SS NC NC D1 N NC D8 NC V SS A A A V SS NC NC NC P NC NC Q8 A A C A A NC D0 Q0 R TDO TCK A A A C# A A A TMS TDI A : Address inputs TMS : IEEE 1149.1 Test input D0 to D8 : Data inputs TDI : IEEE 1149.1 Test input Q0 to Q8 : Data outputs TC K : IEEE 1149.1 Clock input LD# : Synchronous load TDO : IEEE 1149.1 Test output R, W# : Read Write input V REF : HSTL input reference input BW0# : Byte Write data select V DD : Power Supply K, K# : Input clock V DDQ : Power Supply C, C# : Output clock V SS : Ground CQ, CQ# : Echo clock NC : No connection ZQ : Output impedance matching NC/xxM : Expansion address for xxMb DLL# : PLL disable Remarks 1. ×××# indicates active LOW. 2. Refer to Package Dimensions for the index mark. 3. 2A, 7A, 10A and 5B are expansion addresses çç : 10A for 36Mb : 10A and 2A for 72Mb : 10A, 2A and 7A for 144Mb : 10A, 2A, 7A and 5B for 288Mb 2A and 10A of this product can also be used as NC.

μPD44164095B, μPD44164185B R10DS0016EJ0200 Rev.2.00 Page 4 of 34 October 6, 2011 Pin Arrangement 165-pin PLASTIC BGA (13 x 15) (Top View) [μPD44164185B] 1M x 18 1 2 3 4 5 6 7 8 9 10 11 A CQ# VSS/144M NC/36M R, W# BW1# K# NC/288M LD# A VSS/72M CQ B NC Q9 D9 A NC K BW0# A NC NC Q8 C NC NC D10 V SS A A A V SS NC Q7 D8 D NC D11 Q10 V SS V SS V SS V SS V SS NC NC D7 E NC NC Q11 V DDQ V SS V SS V SS V DDQ NC D6 Q6 F NC Q12 D12 V DDQ V DD V SS V DD V DDQ NC NC Q5 G NC D13 Q13 V DDQ V DD V SS V DD V DDQ NC NC D5 H DLL# V REF V DDQ V DDQ V DD V SS V DD V DDQV DDQ V REF ZQ J NC NC D14 V DDQ V DD V SS V DD V DDQ NC Q4 D4 K NC NC Q14 V DDQ V DD V SS V DD V DDQ NC D3 Q3 L NC Q15 D15 V DDQ V SS V SS V SS V DDQ NC NC Q2 M NC NC D16 V SS V SS V SS V SS V SS NC Q1 D2 N NC D17 Q16 V SS A A A V SS NC NC D1 P NC NC Q17 A A C A A NC D0 Q0 R TDO TCK A A A C# A A A TMS TDI A : Address inputs TMS : IEEE 1149.1 Test input D0 to D17 : Data inputs TDI : IEEE 1149.1 Test input Q0 to Q17 : Data outputs TC K : IEEE 1149.1 Clock input LD# : Synchronous load TDO : IEEE 1149.1 Test output R, W# : Read Write input V REF : HSTL input reference input BW0#, BW1# : Byte Write data select V DD : Power Supply K, K# : Input clock V DDQ : Power Supply C, C# : Output clock V SS : Ground CQ, CQ# : Echo clock NC : No connection ZQ : Output impedance matching NC/xxM : Expansion address for xxMb DLL# : PLL disable Remarks 1. ×××# indicates active LOW. 2. Refer to Package Dimensions for the index mark. 3. 2A, 3A, 7A and 10A are expansion addresses : 3A for 36Mb : 3A and 10A for 72Mb : 3A, 10A and 2A for 144Mb : 3A, 10A, 2A and 7A for 288Mb 2A and 10A of this product can also be used as NC.

μPD44164095B, μPD44164185B R10DS0016EJ0200 Rev.2.00 Page 5 of 34 October 6, 2011 Pin Description (1/2) Symbol Type Description A Input Synchronous Address Inputs: These inputs ar e registered and must meet the setup and hold times around the rising edge of K. All transactions operate on a burst of two words (one clock period of bus activity). These inputs are ignored when device is deselected, i.e., NOP (LD# = HIGH). D0 to Dxx Input Synchronous Data Inputs: Input data must meet setup and hold times around the rising edges of K and K# during WRITE operations. See Pin Arrangement for ball site location of individual signals. x9 device uses D0 to D8. x18 device uses D0 to D17. Q0 to Qxx Output Synchronous Data Outputs: Output data is synchronized to the respective C and C# or to K and K# rising edges if C and C# are tied HIGH. Data is output in synchronization with C and C# (or K and K#), depending on the LD# and R, W# command. See Pin Arrangement for ball site location of individual signals. x9 device uses Q0 to Q8. x18 device uses Q0 to Q17 LD# Input Synchronous Load: This input is brought LOW when a bus cycle sequence is to be defined. This definition includes address and read/write direction. All transactions operate on a burst of 2 data (one clock period of bus activity). R, W# Input Synchronous Read/Write Input: When LD# is LOW, this input designates the access type (READ when R, W# is HIGH, WRITE when R, W# is LOW) for the loaded address. R, W# must meet the setup and hold times around the rising edge of K. BWx# Input Synchronous Byte Writes: When LOW these in puts cause their respective byte to be registered and written during WRITE cycles. These signals must meet setup and hold times around the rising edges of K and K# for each of the two rising edges comprising the WRITE cycle. See Pin Arrangement for signal to data relationships. x9 device uses BW0#. x18 device uses BW0#, BW1#. See Byte Write Operation for relation between BWx# and Dxx. K, K# Input Input Clock: This input clock pair register s address and control inputs on the rising edge of K, and registers data on the rising edge of K and the rising edge of K#. K# is ideally 180 degrees out of phase with K. A ll synchronous inputs must meet setup and hold times around the clock rising edges. C, C# Input Output Clock: This clock pair provides a user contro lled means of tuning device output data. The rising edge of C# is used as the output timing re ference for first output data. The rising edge of C is used as the output reference for second output data. Ideally, C# is 180 degrees out of phase with C. When use of K and K# as the reference instead of C and C#, then fixed C and C# to HIGH. Operation cannot be guaranteed unless C and C# are fixed to HIGH (i.e. toggle of C and C#)

μPD44164095B, μPD44164185B R10DS0016EJ0200 Rev.2.00 Page 6 of 34 October 6, 2011 (2/2) Symbol Type Description CQ, CQ# Output Synchronous Echo Clo ck Outputs. The rising edges of these outputs are tightly matched to the synchronous data outputs and can be used as a data valid indication. These signals run freely and do not stop when Q tristates. If C and C# are stopped (if K and K# are stopped in the single clock mode), CQ and CQ# will also stop. ZQ Input Output Impedance Matching Input: This input is used to tune the device outputs to the system data bus impedance. Q, CQ and CQ # output impedance are set to 0.2 x RQ, where RQ is a resistor from this bump to ground. The output impedance can be minimized by directly connect ZQ to VDDQ. This pin cannot be connected directly to GND or left unconnected. The output impedance is adjusted every 20 μs upon power-up to account for drifts in supply voltage and temper ature. After replacement for a resistor, the new output impedance is reset by implementing power-on sequence. DLL# Input PLL Disable: When debugging the system or board, the operation can be performed at a clock frequency slower than TKHKH (MAX.) with out the PLL circuit being used, if DLL# = LOW. The AC/DC characteristics cannot be guaranteed. For normal operation, DLL# must be HIGH and it can be connected to VDDQ through a 10 kΩ or less resistor. TMS TDI Input IEEE 1149.1 Test Inputs: 1.8 V I/O level. These balls ma y be left Not Connected if the JTAG function is not used in the circuit. TCK Input IEEE 1149.1 Clock Input: 1.8 V I/O level. This pin must be tied to VSS if the JTAG function is not used in the circuit. TDO Output IEEE 1149.1 Test Output: 1.8 V I/O level. When providing any external voltage to TDO signal, it is recommended to pull up to VDD. VREF  HSTL Input Reference Voltage: Nominally VDDQ/2. Provides a reference voltage for the input buffers. VDD Supply Power Supply: 1.8 V nominal. See Recommended DC Operating Conditions and DC Characteristics for range. See Recommended DC Operating Conditions and DC Characteristics for range. VSS Supply Power Supply: Ground NC  No Connect: These signals are not connected internally.

μPD44164095B, μPD44164185B R10DS0016EJ0200 Rev.2.00 Page 7 of 34 October 6, 2011 Block Diagram [μPD44164095B] R, W# BW0# LD# K K# K LD# R, W# K ADDRESS D0 to D8 Q0 to Q8MUX OUTPUT REGISTER K DATA REGISTRY & LOGIC x 18 MEMORY ARRAY WRITE DRIVER SENSE AMPS OUTPUT SELECT OUTPUT BUFFER 20ADDRESS REGISTRY & LOGIC WRITE REGISTER C, C# OR K, K# CQ, CQ# 9 18 18 18 9 [μPD44164185B] R, W# BW0# BW1# LD# K K# K LD# R, W# K ADDRESS D0 to D17 Q0 to Q17MUX OUTPUT REGISTER K DATA REGISTRY & LOGIC x 36 MEMORY ARRAY WRITE DRIVER SENSE AMPS OUTPUT SELECT OUTPUT BUFFER 19ADDRESS REGISTRY & LOGIC WRITE REGISTER C, C# OR K, K# CQ, CQ# 18 36 36 36 18

μPD44164095B, μPD44164185B R10DS0016EJ0200 Rev.2.00 Page 8 of 34 October 6, 2011 Power-On Sequence in DDR II SRAM DDR II SRAMs must be powered up and initialized in a predefined manner to prevent undefined operations. The following timing charts show the recommended power-on sequence. The following power-up supply voltage application is recommended: VSS, VDD, VDDQ, VREF, then VIN. VDD and VDDQ can be applied simultaneously, as long as VDDQ does not exceed VDD by more than 0.5 V during power-up. The following power-down supply voltage removal sequence is recommended: VIN, VREF, VDDQ, VDD, VSS. VDD and VDDQ can be removed simultaneously, as long as VDDQ does not exceed VDD by more than 0.5 V during power-down. Power-On Sequence Apply power and tie DLL# to HIGH. - Apply VDD before VDDQ. - Apply VDDQ before VREF or at the same time as VREF. Provide stable clock for more than 20 μs to lock the PLL. PLL Constraints The PLL uses K clock as its synchronizing input and the input should have low phase jitter which is specified as TKC var. The PLL can cover 120 MHz as the lowest frequency. If the input clock is unstable and the PLL is enabled, then the PLL may lock onto an undesired clock frequency. Power-On Waveforms DLL# 20 μs or more Stable Clock VDD/VDDQ Stable (< ±0.1 V DC per 50 ns) Fix HIGH (or tied to VDDQ) VDD/VDDQ Clock Unstable Clock Normal Operation Start

μPD44164095B, μPD44164185B R10DS0016EJ0200 Rev.2.00 Page 9 of 34 October 6, 2011 Truth Table Operation LD# R, W# CLK D or Q WRITE cycle L L L → H Data in Load address, input write data on Input data D(A+0) D(A+1) consecutive K and K# rising edge Input clock K(t+1) ↑ K#(t+1) ↑ READ cycle L H L → H Data out Load address, read data on Output data Q(A+0) Q(A+1) consecutive C and C# rising edge Output clock C#(t+1) ↑ C(t+2) ↑ NOP (No operation) H × L → HD = ×, Q = High-Z Clock stop × × Stopped Previous state Remarks 1. H : HIGH, L : LOW, × : don’t care, ↑ : rising edge. 2. Data inputs are registered at K and K# rising edges. Data outputs are delivered at C and C# rising edges except if C and C# are HIGH then Data outputs are delivered at K and K# rising edges. 3. All control inputs in the truth table must meet set up/hold times around the rising edge (LOW to HIGH) of K. All control inputs are registered during the rising edge of K. 4. This device contains circuitry that ensure the outputs to be in high impedance during power-up. 5. Refer to state diagram and timi ng diagrams for clarification. 6. It is recommended that K = K# = C = C# when clock is stopped. This is not essential but permits most rapid restart by overcoming transmission line charging symmetrically.

μPD44164095B, μPD44164185B R10DS0016EJ0200 Rev.2.00 Page 10 of 34 October 6, 2011 Byte Write Operation [μPD44164095B] Operation K K# BW0# Write D0 to D8 L → H − 0 − L → H 0 Write nothing L → H − 1 − L → H 1 Remarks 1. H : HIGH, L : LOW, → : rising edge. 2. Assumes a WRITE cycle was initiated. BW0# can be altered for any portion of the BURST WRITE operation provided that the setup and hold requirements are satisfied. [μPD44164185B] Operation K K# BW0# BW1# Write D0 to D17 L → H − 0 0 − L → H 0 0 Write D0 to D8 L → H − 0 1 − L → H 0 1 Write D9 to D17 L → H − 1 0 − L → H 1 0 Write nothing L → H − 1 1 − L → H 1 1 Remarks 1. H : HIGH, L : LOW, → : rising edge. 2. Assumes a WRITE cycle was initiated. BW0# and BW1# can be altered for any portion of the BURST WRITE operation provided that the setup and hold requirements are satisfied.

μPD44164095B, μPD44164185B R10DS0016EJ0200 Rev.2.00 Page 11 of 34 October 6, 2011 Bus Cycle State Diagram Remarks State machine control timing sequence is controlled by K. READ DOUBLE Count = Count + 2 WRITE DOUBLE Count = Count + 2 Power UP Write NOP Supply voltage provided LOAD NEW ADDRESS Count = 0 NOP Load, Count = 2 ReadLoad, Count = 2 LoadNOP, Count = 2 NOP, Count = 2

μPD44164095B, μPD44164185B R10DS0016EJ0200 Rev.2.00 Page 12 of 34 October 6, 2011

Electrical Characteristics

Parameter Symbol Conditions Rating Unit Supply voltage V DD −0.5 to +2.5 V Output supply voltage V DDQ −0.5 to VDD V Input voltage V IN −0.5 to VDD+0.5 (2.5 V MAX.) V Input / Output voltage V I/O −0.5 to VDDQ+0.5 (2.5 V MAX.) V Operating ambient temperature T A (E series) 0 to 70 °C (EY series) −40 to 85 Storage temperature T stg −55 to +125 ° C Caution Exposing the device to stress above those listed in Absolute Maximum Ratings could cause permanent damage. The device is not meant to be operated under conditions outside the limits described in the operational section of this speci fication. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Recommended DC Operating Conditions (T A = 0 to 70°C, TA = −40 to 85°C) Parameter Symbol Conditions MI N. TYP. MAX. Unit Note Supply voltage V DD 1.7 1.8 1.9 V Output supply voltage V DDQ 1.4 V DD V 1 Input HIGH voltage V IH (DC) V REF +0.1 V DDQ+0.3 V 1, 2 Input LOW voltage V IL (DC) −0.3 V REF −0.1 V 1, 2 Clock input voltage V IN −0.3 V DDQ+0.3 V 1, 2 Reference voltage V REF 0.68 0.95 V Notes 1. During normal operation, VDDQ must not exceed VDD. 2. Power-up: VIH ≤ VDDQ + 0.3 V and VDD ≤ 1.7 V and VDDQ ≤ 1.4 V for t ≤ 200 ms Recommended AC Operating Conditions (TA = 0 to 70°C, TA = −40 to 85°C) Parameter Symbol Conditions MIN. MAX. Unit Note Input HIGH voltage V IH (AC) V REF +0.2 V 1 Input LOW voltage V IL (AC) VREF −0.2 V 1 Note 1. Overshoot: VIH (AC) ≤ VDD + 0.7 V (2.5 V MAX.) for t ≤ TKHKH/2 Undershoot: V IL (AC) ≥ −0.5 V for t ≤ TKHKH/2 Control input signals may not have pulse widths less th an TKHKL (MIN.) or operate at cycle rates less than TKHKH (MIN.).

μPD44164095B, μPD44164185B R10DS0016EJ0200 Rev.2.00 Page 13 of 34 October 6, 2011 DC Characteristics 1 (TA = 0 to 70°C, VDD = 1.8 ± 0.1 V) Parameter Symbol Test condi tion MIN. MAX. Unit Note x9 x18 Input leakage current I LI −2 +2 μA I/O leakage current I LO −2 +2 μA Operating supply current I DD V IN ≤ VIL or VIN ≥ VIH, -E33 500 530 mA (Read cycle / Write cycle) I I/O = 0 mA, -E35 490 520 Cycle = MAX. -E40 450 480 -E50 400 420 Standby supply current I SB1 V IN ≤ VIL or VIN ≥ VIH, -E33 390 400 mA (NOP) I I/O = 0 mA, -E35 380 390 Cycle = MAX. -E40 380 380 Inputs static -E50 350 350 Output HIGH voltage V OH(Low) |I OH| ≤ 0.1 mA V DDQ−0.2 V DDQ V 3, 4 V OH Note1 V DDQ/2−0.12 V DDQ/2+0.12 V 3, 4 Output LOW voltage V OL(Low) I OL ≤ 0.1 mA V SS 0.2 V 3, 4 V OL Note2 V DDQ/2−0.12 V DDQ/2+0.12 V 3, 4 Notes 1. Outputs are impedance-controlled. | IOH | = (VDDQ/2)/(RQ/5) ±15% for values of 175 Ω ≤ RQ ≤ 350 Ω. 2. Outputs are impedance-controlled. I OL = (VDDQ/2)/(RQ/5) ±15% for values of 175 Ω ≤ RQ ≤ 350 Ω. 3. AC load current is higher than the shown DC values. 4. HSTL outputs meet JEDEC HSTL Class I standards.

μPD44164095B, μPD44164185B R10DS0016EJ0200 Rev.2.00 Page 14 of 34 October 6, 2011 DC Characteristics 2 (TA = −40 to 85°C, VDD = 1.8 ± 0.1 V) Parameter Symbol Test condi tion MIN. MAX. Unit Note x9 X18 Input leakage current I LI −2 +2 μA I/O leakage current I LO −2 +2 μA Operating supply current I DD V IN ≤ VIL or VIN ≥ VIH, -E33Y 650 680 mA (Read cycle / Write cycle) I I/O = 0 mA, -E35Y 640 670 Cycle = MAX. -E40Y 600 630 -E50Y 540 560 Standby supply current I SB1 V IN ≤ VIL or VIN ≥ VIH, -E33Y 510 530 mA (NOP) I I/O = 0 mA, -E35Y 500 520 Cycle = MAX. -E40Y 490 500 Inputs static -E50Y 460 470 Output HIGH voltage V OH(Low) |I OH| ≤ 0.1 mA V DDQ−0.2 V DDQ V 3, 4 V OH Note1 V DDQ/2−0.12 V DDQ/2+0.12 V 3, 4 Output LOW voltage V OL(Low) I OL ≤ 0.1 mA V SS 0.2 V 3, 4 V OL Note2 V DDQ/2−0.12 V DDQ/2+0.12 V 3, 4 Notes 1. Outputs are impedance-controlled. | IOH | = (VDDQ/2)/(RQ/5) ±15% for values of 175 Ω ≤ RQ ≤ 350 Ω. 2. Outputs are impedance-controlled. I OL = (VDDQ/2)/(RQ/5) ±15% for values of 175 Ω ≤ RQ ≤ 350 Ω. 3. AC load current is higher than the shown DC values. 4. HSTL outputs meet JEDEC HSTL Class I standards.

μPD44164095B, μPD44164185B R10DS0016EJ0200 Rev.2.00 Page 15 of 34 October 6, 2011 Capacitance (TA = 25°C, f = 1 MHz) Parameter Symbol Test conditions MIN. MAX. Unit Input capacitance C IN V IN = 0 V 5 pF (Address, Control) Input / Output capacitance C I/O V I/O = 0 V 7 pF (D, Q, CQ, CQ#) Clock Input capacitance C clk V clk = 0 V 6 pF Remark These parameters are periodically sampled and not 100% tested. Thermal Characteristics Parameter Symbol Substrate Airflow TYP. Unit Thermal resistance θ ja 4-layer 0 m/s 21.4 °C/W from junction to ambient air 1 m/s 13.6 °C/W 8-layer 0 m/s 20.3 °C/W 1 m/s 13.1 °C/W Thermal characterization parameter Ψ jt 4-layer 0 m/s 0.02 °C/W from junction to the top center 1 m/s 0.06 °C/W of the package surface 8-layer 0 m/s 0.02 °C/W 1 m/s 0.06 °C/W Thermal resistance θ jc 2.65 °C/W from junction to case

Figure 1. External load at test

μPD44164095B, μPD44164185B R10DS0016EJ0200 Rev.2.00 Page 17 of 34 October 6, 2011 Read and Write Cycle Parameter Symbol -E33, E33Y -E35, E 35Y -E40, E40Y -E50, E50Y Unit Note (300 MHz) (287 MHz) (250 MHz) (200 MHz) C l o c k (K, K#, C, C#) Clock phase jitter (K, K#, C, C#) TKC var 0.2 0.2 0.2 0.2 ns 2 Clock HIGH time (K, K#, C, C#) TKHKL 1.32 1.5 1.6 2.0 ns Clock LOW time (K, K#, C, C#) TKLKH 1.32 1.5 1.6 2.0 ns Clock HIGH to Clock# HIGH TKHK#H 1.49 1.7 1.8 2.2 ns (K → K#, C → C # ) Clock# HIGH to Clock HIGH TK#HKH 1.49 1.7 1.8 2.2 ns (K# → K, C# → C ) Clock to data clock TKHCH 0 1.45 0 1.65 0 1.8 0 2.3 ns (K → C, K# → C#) PLL lock time (K, C) TKC lock 20 20 20 20 μs 3 K static to PLL reset TKC reset 30 30 30 30 ns 4 O u t p u t T i m e s CQ HIGH to CQ# HIGH TCQHCQ#H 1.24 1.35 1.55 1.95 ns 5 (CQ → CQ#) CQ# HIGH to CQ HIGH TCQ#HCQH 1.24 1.35 1.55 1.95 ns 5 (CQ# → CQ) C, C# HIGH to output valid TCHQV 0.45 0.45 0.45 0.45 ns C, C# HIGH to output hold TCHQX −0.45 −0.45 −0.45 −0.45 ns C, C# HIGH to echo clock valid TCHCQV 0.45 0.45 0.45 0.45 ns C, C# HIGH to echo clock hold TCHCQX −0.45 −0.45 −0.45 −0.45 ns CQ, CQ# HIGH to output valid TC QHQV 0.27 0.3 0.3 0.35 ns 6 CQ, CQ# HIGH to output hold TCQHQX −0.27 −0.3 −0.3 −0.35 ns 6 C HIGH to output High-Z TCHQZ 0.45 0.45 0.45 0.45 ns C HIGH to output Low-Z TCHQX1 −0.45 −0.45 −0.45 −0.45 ns S e t u p T i m e s Address valid to K rising edge TAVKH 0.4 0.5 0.5 0.6 ns 7 Synchronous load input (LD#), TIVKH 0.4 0.5 0.5 0.6 ns 7 read write input (R, W#) valid to K rising edge Data inputs and write data TDVKH 0.3 0.35 0.35 0.4 ns 7 select inputs (BWx#) valid to K, K# rising edge H o l d T i m e s K rising edge to address hold TKHAX 0.4 0.5 0.5 0.6 ns 7 K rising edge to TKHIX 0.4 0.5 0.5 0.6 ns 7 synchronous load input (LD#), read write input (R, W#) hold K, K# rising edge to data inputs TKHDX 0.3 0.35 0.35 0.4 ns 7 and write data select inputs (BWx#) hold

μPD44164095B, μPD44164185B R10DS0016EJ0200 Rev.2.00 Page 18 of 34 October 6, 2011 Notes 1. When debugging the system or board, these products can operate at a clock frequency slower than TKHKH (MAX.) without the PLL circuit being used, if DLL# = LOW. Read latency (RL) is changed to 1.0 clock cycle in this operation. The AC/DC characteristics cannot be guaranteed, however. 2. Clock phase jitter is the variance from clock rising e dge to the next expected clock rising edge. TKC var (MAX.) indicates a peak-to-peak value. 3. V DD slew rate must be less than 0.1 V DC per 50 ns for PLL lock retention. PLL lock time begins once VDD and input clock are stable. It is recommended that the device is kept NOP (LD# = HIGH) during these cycles. 4. K input is monitored for this operation. See below for the timing. K K TKC resetor TKC reset 5. Guaranteed by design. 6. Echo clock is very tightly controlled to data valid / data hold. By design, there is a ± 0.1 ns variation from echo clock to data. The data sheet parameters reflect tester guardbands and test setup variations. 7. This is a synchronous device. All addresses, data an d control lines must meet the specified setup and hold times for all latching clock edges. Remarks 1. This parameter is sampled. 2. Test conditions as specified with the output loadin g as shown in AC Test Conditions unless otherwise noted. 3. Control input signals may not be operated with pulse widths less than TKHKL (MIN.). 4. If C, C# are tied HIGH, K, K# become the references for C, C# timing parameters. 5. VDDQ is 1.5 V DC.

μPD44164095B, μPD44164185B R10DS0016EJ0200 Rev.2.00 Page 19 of 34 October 6, 2011 Read and Write Timing K Address Data in 246813 5 7 TKHK#H C TKHCH NOP READ (burst of 2) WRITE (burst of 2) TKHKL TKLKH Q00 Q10Data out Q01 Q11 LD# R, W# TKHCH TKHKL TKLKH TKHK#H TK#HKH TCHQX1 TCHQX TCHQZ D21 TDVKH TKHDXTDVKH TKHDX TKHKH TIVKH TKHIX TAVKH TKHAX CQ CQ# TCQHQV TCQHQX TCHQV TCHCQX TCHCQV TCHCQX TCHCQV READ (burst of 2) READ (burst of 2) NOP Qx2 Q40 Q41 TCHQX TCHQV WRITE (burst of 2) A0 A1 A2 A3 A4 TK#HKH TKHKH D20 D30 D31 TCQ#HCQHTCQHCQ#H Remarks 1. Q01 refers to output from address A0+0. Q02 refers to output from the next internal burst address following A0, i.e., A0+1. 2. Outputs are disabled (high impedance) 2.5 clock cycles after the last READ (LD# = LOW, R, W# = HIGH) is input in the sequences of [READ]-[NOP] and [READ]-[WRITE]. 3. In this example, if address A4 = A3, data Q41 = D31 and Q42 = D32. Write data is forwarded immediately as read results.

μPD44164095B, μPD44164185B R10DS0016EJ0200 Rev.2.00 Page 20 of 34 October 6, 2011 Application Example SRAM Controller Data In Data Out Address LD# R, W# BW# SRAM#1 CQ/CQ# SRAM#4 CQ/CQ# Source CLK/CLK# Return CLK/CLK# ZQ Q CQ# CQSRAM#4 D A LD# R, W# BWx# C/C# K/K# R R Vt Vt R Vt R Vt R Vt R Vt R = 250 Ω R = 250 Ω ZQ Q CQ# CQSRAM#1 D A LD# R, W# BWx# C/C# K/K# R = 50 Ω Vt = Vref . . . . . . Remark AC Characteristics are defined at the condition of SRAM outputs, CQ, CQ# and Q with termination.

μPD44164095B, μPD44164185B R10DS0016EJ0200 Rev.2.00 Page 21 of 34 October 6, 2011 JTAG Specification These products support a limited set of JTAG functions as in IEEE standard 1149.1. Test Access Port (TAP) Pins Pin name Pin assignments Description TCK 2R Test Clock Input. All input are capt ured on the rising edge of TCK and all outputs propagate from the falling edge of TCK. TMS 10R Test Mode Select. This is the command input for the TAP controller state machine. TDI 11R Test Data Input. This is the input si de of the serial registers placed between TDI and TDO. The register placed between TDI and TDO is determined by the state of the TAP controller state machine and the instru ction that is currently loaded in the TAP instruction. TDO 1R Test Data Output. This is the output si de of the serial registers placed between TDI and TDO. Output changes in response to the falling edge of TCK. Remark The device does not have TRST (TAP reset). The Test -Logic Reset state is entered while TMS is held HIGH for five rising edges of TCK. The TAP controller state is also reset on the SRAM POWER-UP. JTAG DC Characteristics (TA = 0 to 70°C, VDD = 1.8 ± 0.1 V, unless otherwise noted) Parameter Symbol Conditions MIN. MAX. Unit JTAG Input leakage current I LI 0 V ≤ VIN ≤ VDD −5.0 +5.0 μA JTAG I/O leakage current I LO 0 V ≤ VIN ≤ VDDQ, −5.0 +5.0 μA Outputs disabled JTAG input HIGH voltage V IH 1.3 V DD+0.3 V JTAG input LOW voltage V IL −0.3 +0.5 V JTAG output HIGH voltage V OH1 | I OHC | = 100 μA 1.6 V V OH2 | I OHT | = 2 mA 1.4 V JTAG output LOW voltage V OL1 I OLC = 100 μA 0.2 V V OL2 I OLT = 2 mA 0.4 V

Figure 2. External load at test

μPD44164095B, μPD44164185B R10DS0016EJ0200 Rev.2.00 Page 23 of 34 October 6, 2011 JTAG AC Characteristics (TA = 0 to 70°C) Parameter Symbol Conditions MIN. MAX. Unit Clock Clock cycle time t THTH 50 ns Clock frequency f TF 20 MHz Clock HIGH time t THTL 20 ns Clock LOW time t TLTH 20 ns Output time TCK LOW to TDO unknown t TLOX 0 ns TCK LOW to TDO valid t TLOV 10 ns Setup time TMS setup time t MVTH 5 ns TDI valid to TCK HIGH t DVTH 5 ns Capture setup time t CS 5 ns Hold time TMS hold time t THMX 5 ns TCK HIGH to TDI invalid t THDX 5 ns Capture hold time t CH 5 ns JTAG Timing Diagram tTHTH tTLOV tTLTHtTHTLtMVTH tTHDX tDVTHtTHMX TCK TMS TDI TDO tTLOX

μPD44164095B, μPD44164185B R10DS0016EJ0200 Rev.2.00 Page 24 of 34 October 6, 2011 Scan Register Definition (1) Register name Description Instruction register The instruction register holds the instru ctions that are execut ed by the TAP controller when it is moved into the run-test/idle or the various data register state. The register can be loaded when it is placed between the TDI and TDO pins. The instruction register is automatically preloaded with the IDCODE instruction at power-up whenever the controller is placed in test-logic-reset state. Bypass register The bypass register is a single bit register that can be placed between TDI and TDO. It allows serial test data to be passed throug h the RAMs TAP to another device in the scan chain with as little delay as possible. ID register The ID Register is a 32 bit register that is loaded with a device and vendor specific 32 bit code when the controller is put in capture- DR state with the IDCODE command loaded in the instruction register. T he register is then placed between the TDI and TDO pins when the controller is moved into shift-DR state. Boundary register The boundary register, under the control of the TAP controller, is loaded with the contents of the RAMs I/O ring when the controller is in capture-DR st ate and then is placed between the TDI and TDO pins when the controller is moved to shift-DR state. Several TAP instructions can be used to activate the boundary register. The Scan Exit Order tables describe whic h device bump connects to each boundary register location. The first column defines the bit’s position in the boundary register. The second column is the name of the input or I/O at the bum p and the third column is the bump number. Scan Register Definition (2) Register name Bit size Unit Instruction register 3 bit Bypass register 1 bit ID register 32 bit Boundary register 107 bit ID Register Definition Part number Organization ID [31:28] vendor revision no. ID [27:12] part no. ID [11:1] vendor ID no. ID [0] fix bit μPD44164095B 2M x 9 XXXX 0000 0000 0101 0101 00000010000 1 μPD44164185B 1M x 18 XXXX 0000 0000 0001 1001 00000010000 1

μPD44164095B, μPD44164185B R10DS0016EJ0200 Rev.2.00 Page 25 of 34 October 6, 2011 SCAN Exit Order Bit Signal name Bump Bit Signal name Bump Bit Signal name Bump no. x9 x18 ID no. x9 x18 ID no. x9 x18 ID

1 C# 6R 37 NC 10D 73 NC 2C

2 C 6P 38 NC 9E 74 Q5 Q11 3E

3 A 6N 39 NC Q7 10C 75 D5 D11 2D

4 A 7P 40 NC D7 11D 76 NC 2E

5 A 7N 41 NC 9C 77 NC 1E

6 A 7R 42 NC 9D 78 NC Q12 2F

7 A 8R 43 Q4 Q8 11B 79 NC D12 3F

8 A 8P 44 D4 D8 11C 80 NC 1G

9 A 9R 45 NC 9B 81 NC 1F

10 Q0 11P 46 NC 10B 82 Q6 Q13 3G

11 D0 10P 47 CQ 11A 83 D6 D13 2G

12 NC 10N 48 – Internal 84 NC 1J

13 NC 9P 49 A 9A 85 NC 2J

14 NC Q1 10M 50 A 8B 86 NC Q14 3K

15 NC D1 11N 51 A 7C 87 NC D14 3J

16 NC 9M 52 A 6C 88 NC 2K

17 NC 9N 53 LD# 8A 89 NC 1K

18 Q1 Q2 11L 54 NC 7A 90 Q7 Q15 2L

19 D1 D2 11M 55 BW0# 7B 91 D7 D15 3L

20 NC 9L 56 K 6B 92 NC 1M

21 NC 10L 57 K# 6A 93 NC 1L

22 NC Q3 11K 58 NC 5B 94 NC Q16 3N

23 NC D3 10K 59 NC BW1# 5A 95 NC D16 3M

24 NC 9J 60 R, W# 4A 96 NC 1N

25 NC 9K 61 A 5C 97 NC 2M

26 Q2 Q4 10J 62 A 4B 98 Q8 Q17 3P

27 D2 D4 11J 63 A NC 3A 99 D8 D17 2N

28 ZQ 11H 64 DLL# 1H 100 NC 2P

29 NC 10G 65 CQ# 1A 101 NC 1P

30 NC 9G 66 NC Q9 2B 102 A 3R

31 NC Q5 11F 67 NC D9 3B 103 A 4R

32 NC D5 11G 68 NC 1C 104 A 4P

33 NC 9F 69 NC 1B 105 A 5P

34 NC 10F 70 NC Q10 3D 106 A 5N

35 Q3 Q6 11E 71 NC D10 3C 107 A 5R

36 D3 D6 10E 72 NC 1D

μPD44164095B, μPD44164185B R10DS0016EJ0200 Rev.2.00 Page 26 of 34 October 6, 2011 JTAG Instructions Instructions Description EXTEST The EXTEST instruction allows circuitry external to the component package to be tested. Boundary-scan register cells at output pins are used to apply test vectors, while those at input pins capture test result s. Typically, the first test vector to be applied using the EXTEST instruction will be shifted into t he boundary scan register using the PRELOAD instruction. Thus, during the update-IR state of EXTEST, the output drive is turned on and the PRELOAD data is driven onto the output pins. IDCODE The IDCODE inst ruction causes the ID ROM to be lo aded into the ID register when the controller is in capture-DR mode and places the ID register between the TDI and TDO pins in shift-DR mode. The IDCODE instruction is the default instruction loaded in at power up and any time the controller is placed in the test-logic-reset state. BYPASS When the BYPASS instruction is loaded in the in struction register, the bypass register is placed between TDI and TDO. This occurs when the TAP controller is moved to the shift- DR state. This allows the board level scan path to be shortened to facilitate testing of other devices in the scan path. SAMPLE / PRELOAD SAMPLE / PRELOAD is a Standard 11 49.1 mandatory public in struction. When the SAMPLE / PRELOAD instruction is loaded in the instruction register, moving the TAP controller into the capture-DR state loads the data in the RAMs input and Q pins into the boundary scan register. Because the RAM clo ck(s) are independent from the TAP clock (TCK) it is possible for the TAP to attempt to capture the I/O ring cont ents while the input buffers are in transition (i.e., in a metastabl e state). Although allowing the TAP to sample metastable input will not harm the device, r epeatable results cannot be expected. RAM input signals must be stabilized for long enough to meet the TAPs input data capture setup plus hold time (tCS plus tCH). The RAMs clock inputs need not be paused for any other TAP operation except capturing the I/O ring contents into the boundary scan register. Moving the controller to shift-DR state then places the boundary scan register between the TDI and TDO pins. SAMPLE-Z If the SAMPLE-Z instruction is loaded in the instruction register, all RAM Q pins are forced to an inactive drive state (high impedance) and the boundary register is connected between TDI and TDO when the TAP controller is moved to the shift-DR state. JTAG Instruction Coding IR2 IR1 IR0 Instruction Note 0 0 0 EXTEST 0 0 1 IDCODE 0 1 0 SAMPLE-Z 1 0 1 1 RESERVED 2 1 0 0 SAMPLE / PRELOAD 1 0 1 RESERVED 2 1 1 0 RESERVED 2 1 1 1 BYPASS Notes 1. TRISTATE all Q pins and CAPTURE the pad values into a SERIAL SCAN LATCH. 2. Do not use this instruction code because th e vendor uses it to evaluate this product.

μPD44164095B, μPD44164185B R10DS0016EJ0200 Rev.2.00 Page 27 of 34 October 6, 2011 Output Pin States of CQ, CQ# and Q Instructions Control-Register Status Output Pin Status CQ,CQ# Q EXTEST 0 Update High-Z

1 Update Update

1 SRAM SRAM

1 High-Z High-Z

Remark The output pin statuses during each instruction vary according to the Control-Register status (value of Boundary Scan Register, bit no. 107). There are three statuses: Update : Contents of the “Update Register” are output to the output pin (DDR Pad). SRAM : Contents of the SRAM internal output “SRAM Output” are output to the output pin (DDR Pad). High-Z :The output pin (DDR Pad) becomes high impedance by controlling of the “High-Z JTAG ctrl”. The Control-Register status is set during Update-DR at the EXTEST or SAMPLE instruction. SRAM CAPTURE Register Boundary Scan Register Update Register DDR Pad SRAM Output Driver High-Z JTAG ctrl High-Z Update SRAM Output

μPD44164095B, μPD44164185B R10DS0016EJ0200 Rev.2.00 Page 28 of 34 October 6, 2011 Boundary Scan Register Status of Output Pins CQ, CQ# and Q Instructions SRAM Status Boundary Scan Register Status Note CQ,CQ# Q EXTEST READ (Low-Z) Pad Pad NOP (High-Z) Pad Pad IDCODE READ (Low-Z) − − No definition NOP (High-Z) − − SAMPLE-Z READ (Low-Z) Pad Pad NOP (High-Z) Pad Pad SAMPLE READ (Low-Z) Internal Internal NOP (High-Z) Internal Pad BYPASS READ (Low-Z) − − No definition NOP (High-Z) − − Remark The Boundary Scan Register statuses during execution each instruction vary according to the instruction code and SRAM operation mode. There are two statuses: Pad : Contents of the output pin (DDR Pad) are captured in the “CAPTURE Register” in the Boundary Scan Register. Internal : Contents of the SRAM internal output “SRAM Output” are captured in the “CAPTURE Register” in the Boundary Scan Register. Pad Internal SRAM Output Driver Update Register DDR Pad High-Z JTAG ctrl CAPTURE Register SRAM Output Boundary Scan Register

μPD44164095B, μPD44164185B R10DS0016EJ0200 Rev.2.00 Page 29 of 34 October 6, 2011 TAP Controller State Diagram Test-Logic-Reset Run-Test / Idle Select-DR-Scan Capture-DR Capture-IR Shift-DR Exit1-DR Pause-DR Exit2-DR Update-DR Update-IR Exit2-IR Pause-IR Exit1-IR Shift-IR Select-IR-Scan 10 10 11 1 Disabling the Test Access Port It is possible to use this device without utilizing the TAP. To disable the TAP Controller without interfering with normal operation of the device, TCK must be tied to VSS to preclude mid level inputs. TDI and TMS may be left open but fix them to VDD via a resistor of about 1 kΩ when the TAP controller is not used. TDO should be left unconnected also when the TAP controller is not used.

μPD44164095B, μPD44164185B R10DS0016EJ0200 Rev.2.00 Page 30 of 34 October 6, 2011 Test Logic Operation (Instruction Scan) TCK Controller state TDI TMS TDO Test-Logic-Reset Run-Test/Idle Select-DR-Scan Select-IR-Scan Capture-IR Shift-IR Exit1-IR Pause-IR Exit2-IR Shift-IR Exit1-IR Update-IR Run-Test/Idle IDCODEInstruction Register state New Instruction Output Inactive

μPD44164095B, μPD44164185B R10DS0016EJ0200 Rev.2.00 Page 31 of 34 October 6, 2011 Test Logic (Data Scan) Controller state TDI TMS TDO Run-Test/Idle Select-DR-Scan Capture-DR Shift-DR Exit1-DR Pause-DR Exit2-DR Shift-DR Exit1-DR Update-DR Test-Logic-Reset InstructionInstruction Register state IDCODE Run-Test/Idle Select-DR-Scan Select-IR-Scan Output Inactive TCK

μPD44164095B, μPD44164185B R10DS0016EJ0200 Rev.2.00 Page 32 of 34 October 6, 2011 Package Dimensions 165-PIN PLASTIC BGA(13x15) ITEM DIMENSIONS D E w A e 13.00 ±0.10 15.00 ±0.10 0.30 0.37 ±0.05 −0.05 0.10 1.35 ±0.11 0.98 1.00 (UNIT:mm) 0.15 0.25 1.50 0.50 S e y1 S A Sy SxbA B M SwA SwB ZEZD INDEX MARK A B ABCDEFGHJKLMNPR E D x y ZD ZE b 0.50 P165F5-100-EQ3 +0.10

μPD44164095B, μPD44164185B R10DS0016EJ0200 Rev.2.00 Page 33 of 34 October 6, 2011 Recommended Soldering Condition Please consult with our sales offices for soldering conditions of these products. Types of Surface Mount Devices μPD44164095BF5-EQ3 : 165-pin PLASTIC BGA (13 x 15) μPD44164185BF5-EQ3 : 165-pin PLASTIC BGA (13 x 15) Quality Grade

• A quality grade of the products is “Standard”.
• Anti-radioactive design is not implemented in the products.
• Semiconductor devices have the possibility of unexpected defects by affection of cosmic ray that reach to the ground and so forth.

All trademarks and registered trademarks are the property of their respective owners. C - 34 Revision History μPD44164095B, μPD44164185B Description Rev. Date Page Summary 1st edition ’10.02.01 - New Preliminary Data Sheet Rev.0.02 ’10.08.18 P13 DC Characterist ics (Modification, Spec of IDD and ISB1) P14 Thermal Characteristics (Modification, Spec) Rev.1.00 ’10.12.13 P30 Package Dimen sions (Modification, Dimensions) Throughout Preliminary Data Sheet Æ Data Sheet Rev.2.00 ’11.10.06 Th roughout Add Lead and the extended temperature operation product

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