PCT1600A DIOTEC | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 2

Technical content

PCT1600A ... PCT1600M PCT1600A ... PCT1600M Silicon Rectifiers – Common Cathode Silizium-Gleichrichter – Gemeinsame Kathode Version 2007-07-06 Dimensions - Maße [mm] Nominal current Nennstrom 16 A Repetitive peak reverse voltage Periodische Spitzensperrspannung 50...1000 V Plastic case Kunststoffgehäuse TO-220AB Weight approx. Gewicht ca. 1.8 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging in tubes Standard Lieferform in Stangen Maximum ratings and Characteristics Grenz- und Kennwerte Type Typ Repetitive peak reverse voltage Periodische Spitzensperrspannung VRRM [V] 1) Surge peak reverse voltage Stoßspitzensperrspannung VRSM [V] 1) Forward voltage Durchlass-Spannung VF [V] 1), Tj = 25°C IF = 5 A IF = 8 A PCT1600A 50 50 < 1.0 < 1.1 PCT1600B 100 100 < 1.0 < 1.1 PCT1600D 200 200 < 1.0 < 1.1 PCT1600G 400 400 < 1.0 < 1.1 PCT1600J 600 600 < 1.0 < 1.1 PCT1600K 800 800 < 1.0 < 1.1 PCT1600M 1000 1000 < 1.0 < 1.1 Max. average forward current, R-load Dauergrenzstrom mit R-Last TC = 100°C TC = 100°C IFAV IFAV

8 A 1)

16 A 2)

Repetitive peak forward current Periodischer Spitzenstrom f > 15 Hz IFRM 30 A 3) Peak forward surge current, 50/60 Hz half sine-wave Stoßstrom für eine 50/60 Hz Sinus-Halbwelle TA = 25°C IFSM 135/150 A 1) Rating for fusing, t < 10 ms Grenzlastintegral, t < 10 ms TA = 25°C i2t 90 A2s 1) Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS -50...+150°C -50...+175°C

1 Per diode – Pro Diode

2 Per device (parallel operation) − Pro Bauteil (Parallelbetrieb)

3 Max. temperature of the case TC = 100°C – Max. Temperatur des Gehäuses TC = 100°C © Diotec Semiconductor AG http://www.diotec.com/ 1 321 321 Type Typ 3.8 2.54 0.9 1.5 10±0.2 3.4 3 13.2 15.7

PCT1600A ... PCT1600M Characteristics Kennwerte Leakage current Sperrstrom Tj = 25°C VR = VRRM IR < 10 µA Thermal resistance junction to case Wärmewiderstand Sperrschicht – Gehäuse RthC < 2.5 K/W 1) 2 http://www.diotec.com/ © Diotec Semiconductor AG Rated forward current vs. temp. of the case in Abh. v. d. GehäusetemperaturZul. Richtstrom 120 100 IFAV [%] [°C]TC 150100500 [A] IF Forward characteristics (typical values) Durchlasskennlinien (typische Werte) T = 25°Cj T = 125°Cj 200a-(5a-0.95v)