PCR606J KCD | Alldatasheet
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◆ Repetit ive Peak Off-State Voltage : 600V ◆ R.M.S On -State Current ( IT( RMS)= 0.6 A ◆ Low On-State Voltage (1.2V(Typ.)@ ITM) Ge neral Description Sens itive triggering SCR is suitable for the application where gate current limited such as small motor control, gate driver for large SCR, sensing and detecting circuits. 2. G ate 1. Cathode Sy mbol Sensitive Gate Silicon Controlled Rectifiers TO -92 1 2 3 Anode
Electrical Characteristics ( TC = 25 °C unless otherwise noted ) Sy mbol Items Conditions Ratings Unit Min. Typ. Max. IDRM Repetitive Pea k Off-State Current VAK = VDR M or VRRM ; RGK = 1000 Ω TC = 25 °C TC = 125 °C 200 VTM Peak On- State Voltage (1) ( ITM = 1 A, Peak ) ─ 1.2 1.7 V IGT Gate T rigger Current (2) VAK = 6 V , RL=1 00 Ω TC = 25 °C TC = - 40 °C 200 500 VGT G ate Trigger Voltage (2) VD = 7 V , RL=100 Ω TC = 25 °C TC = - 40 °C 0.8 1.2 V V GD Non- Trigger Gate Voltage (1) VAK = 12 V , RL=1 00 Ω TC = 125 ° C 0.2 ── V dv/dt Critical Rate of Rise Off-State Voltage VD = 0.67 VDRM , Exponential waveform, RGK 1000Ω TJ = 125 °C 500 800 ─ V/㎲ di /dt Critical Rate of Rise On-State Current ITM = 2A ; Ig = 10mA ── 50 A/㎲ IH Holding Curr ent VAK = 12 V , Gate Open Initiating Curent = 50mA TC = 25 °C TC = - 40 °C 5.0 mA R t h(j-c) The rmal Impedance Junction to case ── 60 °C/W Rt h(j-a) The rmal Impedance Junction to Ambient ── 150 °C/W PCR606J ※ No tes : 1. Pulse Width ≤ 1.0 ms , Duty cycle ≤ 1% 2. Does not include RGK i n measurement.
0.1 IGT(t o IGT(2 o Junct ion Temperature[ o Rθ (J -C) Transient Thermal Impedance [ o C/W Ti me (sec) 5 1.0 1.5 2.0 2.5 o C o C O n-State Current [A] O n-State Voltage [V] 100 120 140 θ = 180 o Ma x. Allowable Case Temperature [ o A verage On-State Current [A] IGM(1A) VGD(0 .2V) PG (AV)(0 .1W) PGM(2 VGM(5 o C G ate Voltage [V] G ate Current [mA] PCR606J F ig 2. Maximum Case T emperature θ : Conduction Angle 360° θ 2ππ Fig 3. Typical For ward Voltag e Fig 4. Ther mal Resp onse F ig 5. Typical Gate Trigger Voltage vs. Junction Temperature Fig 6. Typical Gate Trigg er Cur rent vs. Junction Temperature F ig 1. Gate Characteristics 50 0 50 100 150 0.1 VGT(t o VGT(25 o Junct ion Temperature[ o
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 θ = 180 o θ = 120 o θ = 90 o θ = o θ = 30 o M ax. Average Power Dissipation [W] A verage On-State Current [A] 50 0 50 100 150 0.1 IH(t o IH(2 o Junct ion Temperature[ o PCR606J Fig 7. Typical Hold ing Current F ig 8. Power Dissipation
Dim. mm Inch A 4.2 0.165 B 3.7 0.146 C 4.43 4.83 0.174 0.190 D 14.07 14.87 0.554 0.585 E 0.4 0.016 F 4.43 4.83 0.174 0.190 G 0.45 0.017 H2 .54 0 .100 I2 .54 0 .100 J 0.33 0.48 0.013 0.019 T Cathode 2. Gate 3. Anode A B C G E F D PCR606J H J I