PCR406 UTC | Alldatasheet
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Technical content
UTC UNISONIC TECHNOLOGIES CO. LTD 1 QW-R301-010,A
DESCRIPTION
The UTC PCR406 silicon controlled rectifiers are high performance planner diffused PNPN devices. These parts are intended for low cost high volume applications. TO-92 1 : C A T H O D E 2 : G A T E 3 : A N O D E ABSOLUTE MAXIMUM RATINGS PARAMETERS SYMBOL TEST CONDITION RATING UNITS Repetitive Peak Off-State Voltage PCR406-6 PCR406-5 V DRM Tj=40 to 125 °C (RGK =1kΩ) 400 300 V On-State Current IT(RMS) Tc=40 °C 0.8 A Average On-State Current IT(AV) Half Cycle=180, Tc=40 °C 0.5 A Peak Reverse Gate Voltage VG RM IGR=10uA 1 V Peak Gate Current IGM 10us Max. 0.1 A Gate Dissipation PG(AV) 20ms Max. 150 mW Operating Temperature Tj -40~125 °C Storage Temperature T STG -40~125 °C Soldering Temperature T SLD 1.6mm from case 10s Max. 250 °C ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN MAX UNIT Off state leakage current IDRM VDRM(RGK=1KΩ), Tj=125°C 0.1 mA Off state leakage current IDRM VDRM(RGK=1KΩ), Tj=25°C 1.0 µA On state voltage VT IT=0.4A IT=0.8A 1. 4 2.2 V On state threshold voltage VT(TO) Tj=125 °C 0.95 V On state slops resistance Rt Tj=125 °C 600 m Gate trigger current IGT VD=7V 200 µA Gate trigger voltage VGT VD=7V 0.8 V Holding current IH R GK=1KΩ 5 mA Latching current IL R GK=1KΩ 6 mA Critical rate of voltage rise DV/DT VD=0.67*VDRM(R GK=1KΩ), Tj=125°C V/ µs
UTC UNISONIC TECHNOLOGIES CO. LTD 2 QW-R301-010,A PARAMETER SYMBOL TEST CONDITIONS MIN MAX UNIT Critical rate of current rise DV/DT IG=10mA, dIG/dt=0.1A/ µs, Tj=125°C A/ µs Gate controlled delay time TGD IG=10mA, dIG/dt=0.1A/ µs, 2.2 µs Commutated turn-off time TG Tj=85 °C, VD=0.67*VDRM, VR=35V, IT=IT(AV) 200 µs CLASSIFICATION OF IGT RANK B C AA AB AC AD RANGE 50-100 µA 100-200 µA 8-15 µA 15-20 µA 20-25 µA 25-50 µA