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Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
Features
- Metal-Semiconductor junction with guard ring
- Plastic package has Underwriters Laboratory Flammability Classification 94V-0
- Protection of the Mosfet in flyback power supply
- TRANSIL TM and blocking diode in a single package Mechanical Data
- Case: Molded plastic body
- Terminals: Plated Axial leads,solderable per MIL-STD-750,Method 2026
- Mounting position:Any DO-15 DO 15 ABSOLUTE MAXIMUM RATINGS SYMBOL UNIT Storage temperature Junciton temperature Maximum power dissipation PARAMETER Value -55~+150 150 Tstg Tj W Min. Typ. Max. —— —— 219 V Maximum power dissipation Tlead=90℃ UNITTest conditions Value PARAMETER SYMBOL Maximum peak pulse current at TP=10/1000uS 1.5 ELECTRICAL CHARACTERISTICS TRANSIL(Tj= 25 °C unless otherwise noted) P IPP=2.7APPK Tj=125 —— —— 10 150 160 170 V Breakdown voltage αT TP=10/1000uS IR VR=136V VBR ELECTRICAL CHARACTERISTICS DIODE(Tj= 25 °C unless otherwise noted) IR=1mA Vl Temperature coefficient uALeakage current Min. Typ. Max. Tj=125 —— 3 20 700 —— —— V —— —— 50 nS Tj 125 18 Repetitive peak reverse voltage VRRM Reverse recovery time TRR PARAMETER SYMBOL Test conditions Value Tj=25℃ Peak forward voltage Reverse leakage current IR VR=VRRM uA V IF=0.5A,IR=1.0A,IRR=0.25A VFP IF=1A DIF/dt=100A/uS UNIT Tj=125 — —— — 1 8 www.goodark.com Rev. 2.01 of 2 Peak forward voltage VVFP F/0 0 / S
pFCjTotal parasitic capacitance 1MHZ 4.0V THERMAL RESISTANCES PARAMETER SYMBOL Typical value CAPACITANCE UNIT ℃/W ℃/W 40Junciton to leads L=10mm 105 Notes：1. Thermal Resistance From Junction to Ambient and From Junction to Lead Mounted on P.C.B with 0.2"×0.2"(5.0×5.0mm) Copper Pad Areas PARAMETER SYMBOL Typical value Junciton to ambient condition see note 1 RΘjl RθJa RATINGS AND CHARACTERISTICS CURVES www.goodark.com Rev. 2.02 of 2