PCP1208-TD-H

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Document overview

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Technical content

Features

• V CEO=200V , IC=0.7A • High allowable power dissipation • Halogen free compliance
• Low collector-to-emitter saturation voltage V CE(sat)=0.115V(typ.)@IC=0.35A
• High-speed switching t f=70ns(typ.)@IC=0.3A Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V CBO 220 V Collector-to-Emitter Voltage V CEO 200 V Emitter-to-Base Voltage V EBO 8V Collector Current I C 0.7 A Collector Current (Pulse) I CP 2A Base Current I B 140 mA Collector Dissipation P C When mounted on ceramic substrate (450mm ×0.8mm) 1.3 W Tc=25°C 3.5 W Junction Temperature Tj 150 °C Storage Temperature Tstg -55 to +150 °C Package Dimensions unit : mm (typ) 7008B-003 Ordering & Package Information Device Package Shipping note PCP1208-TD-H PCP (SC-62, SOT-89, TO-243) 1,000 pcs./reel Pb Free and Halogen Free Packing Type: TD Marking Electrical Connection TD 1 : Base 2 : Collector 3 : Emitter PCP 2.5 4.0 1.0 1.5 0.5 0.4 3.0 4.5 1.6 0.4 12 3 1.5 Top View Bottom View 0.75 PCP1208-TD-H QO LOT No. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above t he Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

No.1836-2/7 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Collector Cutoff Current I CBO VCB=100V, IE=0A 1 μA Emitter Cutoff Current I EBO VEB=4V, IC=0A 1 μA DC Current Gain h FE VCE=5V, IC=100mA 200 560 Gain-Bandwidth Product f T VCE=10V, IC=100mA 120 MHz Output Capacitance Cob V CB=10V, f=1MHz 9 pF Collector-to-Emitter Saturation Voltage V CE(sat) I C=0.35A, IB=35mA 115 200 mV Base-to-Emitter Saturation Voltage V BE(sat) I C=0.35A, IB=35mA 0.82 1.2 V Collector-to-Base Breakdown Voltage V (BR)CBO IC=10μA, IE=0A 220 V Collector-to-Emitter Breakdown Voltage V (BR)CEO IC=1mA, RBE=∞ 200 V Emitter-to-Base Breakdown Voltage V (BR)EBO IE=10μA, IC=0A 8 V Turn-On Time t on See specifi ed Test Circuit. 50 ns Storage Time t stg 2 μs Fall Time t f 70 ns Switching Time Test Circuit RB VCC=100V IC=10IB1= --10IB2=0.3A 50Ω INPUT OUTPUT RL 820μF PW=50μs IB1 D.C.≤1% IB2

No.1836-3/7 IC -- VCE Collector-to-Emitter V oltage, VCE -- V Collector-to-Emitter V oltage, V CE -- V Collector Current, IC -- A IC -- VCE Collector Current, IC -- A hFE -- ICIC -- VBE Collector Current, IC -- A Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- A DC Current Gain, hFE IT15952 0.1 0.7 0.6 0.5 0.4 0.3 0.2 0.8 0.9 1.0 IB=0mA 2mA 4mA 6mA 8mA 10mA 20mA 30mA 40mA 50mA 60mA 80mA IT15953 01 0 1 456789 32 0.02 0.14 0.12 0.10 0.08 0.06 0.04 0.16 0.18 0.20 IB=0μA 200μA 100μA 300μA 400μA 500μA100mA 600μA 1mA 900 μA 800 μA 700μA IT15955 100 1.0 1000 0.01 325 0.1 1.073 25 7 Ta=75°C 25°C VCE=5V 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 IT15954 VCE=5V --25 Ta=75 --25°C Cob -- VCB VCE(sat) -- IC hFE -- IC Collector Current, IC -- A DC Current Gain, hFE Collector Current, IC -- A Gain-Bandwidth Product, fT -- MHz Collector-to-Base V oltage, VCB -- V Output Capacitance, Cob -- pF Collector Current, IC -- A Collector-to-Emitter Saturation V oltage, VCE(sat) -- V fT -- IC 0.1 1.0 23 5 7 2 10 10035 7 2 35 7 100 1.0 IT15958 IT15959 0.10.01 7532 1.07532 0.1 1.0 0.01 Ta=75 25°C--25°C IC / IB=10 IT15957 0.01 0.1 23 5 7 23 5 1.07 100 1000 VCE=10V IT15956 1.0 100 100 0.01 325 7 3 25 7 1.00.1 Ta=25°C VCE =5.0V0.5V 2.0V f=1MHz 1.0V

No.1836-4/7 VBE(sat) -- ICVCE(sat) -- IC Collector Current, IC -- A Base-to-Emitter Saturation V oltage, VBE(sat) -- V Collector Current, IC -- A Collector-to-Emitter Saturation V oltage, VCE(sat) -- VCollector Current, IC -- A Collector-to-Emitter V oltage, VCE -- V PC -- Ta Collector Dissipation, PC -- W Ambient Temperature, Ta -- °C A S O 0.10.01 75327 532 1.0 1.0 0.1 IT15961 IC / IB=10 Ta= --25°C 75°C IT15960 0.10.01 7532 1.07532 0.1 0.01 1.0 Ta=75°C 25°C--25°C IC / IB=20 25°C IT15963 250 50 75 100 150 125 175 0.6 0.4 0.2 0.8 1.0 1.2 1.3 1.4 When mounted on ceramic substrate (450mm2×0.8mm) IT16014 0.001 0.01 0.1 1.0 1.00.01 22 537 0.1 2 537 1000253710 2537100537 ICP=2A IC=0.7A DC operation (Ta=25 °C) 100ms 100 μs 1ms 10ms <10μs 500 μs Ta=25°C Single pulse When mounted on ceramic substrate (450mm2×0.8mm)

No.1836-5/7 Bag Packing Specifi cation PCP1208-TD-H

No.1836-6/7 Outline Drawing Land Pattern Example PCP1208-TD-H Mass (g) Unit 0.058 * For reference mm Unit: mm 2.2 1.8 1.5 3.7 1.5 3.0 1.0 1.0

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