PCHMB300W12 KSS | Alldatasheet
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㹇㹅㹀㹒 Module 㸱㸮㸮㸿㸭㸯㸰㸮㸮㹔 㹎㹁㹆㹋㹀㸱㸮㸮㹕㸯㸰 ڧᅇ㊰ᅗ㸸 㹁㹇㹐㹁㹓㹇㹒 ڧᴫ␎ᅗ㸸 㹑㹁㹆㹃㹋㸿㹒㹇㹁 㹂㹇㸿㹅㹐㸿㹋 D i m e n s i o n : 㹙m m㹛 ڧ᭱ᐃ᱁ 㸸 㹋㸿㹖㹇㹋㹓㹋 㹐㸿㹒㹇㹌㹅㹑 䠄at TC=25䉝 unless otherwise specified 䠅 Item Symbol Condition Rated Value Unit IGBT 䝁 䝺 䜽 䝍 䞉 䜶 䝭 䝑 䝍 㛫㟁ᅽ Collector-Emitter Voltage VCES G-E Short 䠍䠎䠌䠌 㹔 䝀 䞊 䝖 䞉 䜶 䝭 䝑 䝍 㛫㟁ᅽ Gate-Emitter Voltage VGES C-E Short ± 䠎䠌 㹔 䝁 䝺 䜽 䝍 㟁ὶ Collector Current IC DC Tc=85䉝㻌 䠏䠌䠌 㸿 ICP Pulse 䍺 1ms 䠒䠌䠌 䝁 䝺 䜽 䝍 ᦆኻ Collector Power Dissipation PC Tj=175䉝㻌 䠍䠑䠓䠔 㹕 Tj=150䉝㻌 䠍䠏䠍䠑 Diode ⧞䜚 ㏉䛧 䝢 䞊 䜽 ㏫㟁ᅽ Repetitive peak reverse voltage VRRM 㻌 䠍䠎䠌䠌 㹔 㡰㟁ὶ Forward Current IF 㻌 䠏䠌䠌 㸿 IFM Pulse 䍺 1ms 䠒䠌䠌 㻌 ᭱㻌㻌᥋㻌ྜ㻌 㻌ᗘ Maximum Junction Temperature 䠰jMAX ▐ືస䠄㐣㈇Ⲵ䠅 Instantaneous Overload 䠍䠓䠑 Υ ᥋ ྜ ᗘ Junction Temperature Range 䠰䡆 䠉䠐䠌䡚䠇䠍䠑䠌 Υ 㻌 ಖ Ꮡ ᗘ Storage Temperature Range Tstg 䠉䠐䠌䡚䠇䠍䠎䠑 Υ 㻌 ⤯ ⦕ ⪏ ᅽ Isolation Voltage 䠲ISO Terminal to Base AC,1minute 䠎㻘䠑䠌䠌 㹔(RMS) ⥾㻌䜑 㻌 㻌䛡 㻌䝖 㻌䝹 㻌䜽 Mounting Torque Module Base to Heatsink Ftor 䠩 䠒 䠏 㹫 Busbar to Main Terminal 䠩 䠒 䠏
㹇㹅㹀㹒 Module 㸱㸮㸮㸿㸭㸯㸰㸮㸮㹔 㹎㹁㹆㹋㹀㸱㸮㸮㹕㸯㸰 ڧ㟁Ẽⓗ≉ᛶ㸸 㹃㹊㹃㹁㹒㹐㹇㹁㸿㹊㹁㹆㸿㹐㸿㹁㹒㹃㹐㹇㹑㹒㹇㹁㹑 㻌䠄at Tj=25䉝 unless otherwise specified 䠅 Characteristic Symbol Test Condition Min. Typ. Max. Unit IGBT 䝁 䝺 䜽 䝍 㐽᩿㟁ὶ Collector-Emitter Cut-Off Current ICES 䠲䠟䠡= 1200V,䠲䠣䠡= 0V 㸫 㸫 㸯㸮 㹫㸿 䝀 䞊 䝖 㻌 ₃䜜 㟁ὶ Gate-Emitter Leakage Current IGES 䠲䠣䠡= ±20V, 䠲䠟䠡= 0V 㸫 㸫 㸯㸮 ȣ㸿 䝁䝺䜽䝍䞉䜶䝭䝑䝍㛫㣬㟁ᅽ Collector-Emitter Saturation Voltage VCE(sat.) 䠥䠟= 300A,V䠣䠡= 15V (chip level) Tj=25䉝 㸫 㸯㸳㸮 㸰㸮㸮 㹔Tj=125䉝 㸫 㸯㸵㸮 㸫 Tj=150䉝 㸫 㸯㸶㸮 㸫 䝀䞊䝖㻌 䛧䛝䛔್ 㟁 ᅽ 䠣ate-Emitter Threshold Voltage VGE(th.) 䠲䠟䠡= 10V,䠥䠟= 10mA 㸲㸶 㸫 㸵㸮 㹔 ධຊᐜ㔞 Input Capacitance Cies 䠲䠟䠡= 25V,䠲䠣䠡= 0V,䡂= 1MH䠶 㸫 㸱㸮㸮 㸫 㹬㹄ฟ ຊ ᐜ 㔞 Output Capacitance Coes 㸫 㸮㸶㸴 㸫 ᖐ㑏ᐜ㔞 Reverse Transfer Capacitance 㻯䡎es 㸫 㸮㸵㸮 㸫 䝀䞊䝖㟁 Ⲵ 㔞 Gate Charge Qg Vcc=600V, Ic=300A, VGE=-15䡚+15V 㸫 㸱㸱㸮㸮 㸫 㹬㹁 Switching Time ୖ᪼㛫 Rise Time tr VCC= IC= RG= VGE= Tj= 600V Inductive Load 300A 㻞䠊㻠䃈 ±15V 150䉝 㸫 㸷㸮 㸫 㹬㹱 䝍䞊䞁䜸䞁㐜ᘏ㛫 䠰urn-on Delay Time td(on) 㸫 㸰㸰㸮 㸫 ୗ㝆㛫 䠢 all Time tf 㸫 㸰㸷㸮 㸫 䝍䞊䞁䜸䝣㐜ᘏ㛫 Turn-off Delay Time td(off) 㸫 㸶㸮㸮 㸫 Diode 㡰 㟁 ᅽ Peak Forward Voltage 㹔㹄 䠥F= 300A,VGE=0V (chip level) Tj=25䉝 㸫 㸰㸮㸮 㸰㸴㸮 㹔Tj=125䉝 㸫 㸯㸷㸶 㸫 Tj=150䉝 㸫 㸯㸷㸳 㸫 ㏫ ᅇ 㛫 Reverse Recovery Time 㹲㹰㹰 VCC= I䠢= RG= VGE= Tj= 600V Inductive Load 300A 㻞䠊㻠䃈 ±15V 150䉝 㸫 㸰㸳㸮 㸫 㹬㹱 ڧ⇕ ⓗ ≉ ᛶ 㸸 㹒㹆㹃㹐㹋㸿㹊㹁㹆㸿㹐㸿㹁㹒㹃㹐㹇㹑㹒㹇㹁㹑 㹁㹦㹟㹰㹟㹡㹲㹣㹰㹧㹱㹲㹧㹡 㹑㹷㹫㹠㹭㹪 㹒㹣㹱㹲㹁㹭㹬㹢㹧㹲㹧㹭㹬 㹋㹧㹬 . 㹒㹷㹮. 㹋㹟㹶. 㹓㹬㹧㹲 ⇕ ᢠ Thermal Resistance 䠥䠣䠞䠰 䠮th(j-c) Junction to Case Per 1 Arm (Tc ᐃⅬ䠖䝏䝑䝥┤ୗ䠅 㸫 㸫 㸮㸮㸷㸳 Υ㸭㹕 䠠䡅䡋䡀䡁 㸫 㸫 㸮㸯㸳
㹇㹅㹀㹒 Module 㸱㸮㸮㸿㸭㸯㸰㸮㸮㹔 㹎㹁㹆㹋㹀㸱㸮㸮㹕㸯㸰 ڧ≉ᛶᅗ㸸㹁㹆㸿㹐㸿㹁㹒㹃㹐㹇㹑㹒㹇㹁㹑 㹁㹓㹐㹔㹃㹑 0 1 2 3 4 5 100 200 300 400 500 600 Collector to Emitter Voltage VCE (V) Collector Current IC (A) Fig.1- Output Characteristics (Typical) Tj=25°C 10V VGE =20V 12V15V13V 11V 0 1 2 3 4 150 300 450 600 Collector to Emitter Voltage VCE (V) Collector Current IC (A) Fig.2- Saturation Voltage Characteristics (Typical) Tj=25°C Tj=125°C VGE =15V Tj=150°C 4 6 8 10 12 150 300 450 600 Gate to Emitter Voltage VGE (V) Collector Current IC (A) Fig.3- Transfer Characteristics (Typical) Tj=25°CTj=125°C VCE =20V Tj=150°C 0 100 200 300 100 300 1000 3000 10000 Collector Current IC (A) Switching Time t (ns) Fig.5- Collector Current vs. Switching Time tdOFF tf tr(Ic) tdON VCC =600V R G =2.4Ȑ VGE =±15V Tj=125°C Tj=150°C Inductive Load 1 2 3 10 20 100 300 1000 3000 10000 Series Gate Impedance RG (Ȑ) Switching Time t (ns) Fig.6- Series Gate Impedance vs. Switching Time VCC =600V IC =300A VGE =±15V Tj=125°C Tj=150°C Inductive Load tf tr(IC ) tdON tdOFF
㹇㹅㹀㹒 Module 㸱㸮㸮㸿㸭㸯㸰㸮㸮㹔 㹎㹁㹆㹋㹀㸱㸮㸮㹕㸯㸰 ڧ≉ᛶᅗ㸸㹁㹆㸿㹐㸿㹁㹒㹃㹐㹇㹑㹒㹇㹁㹑 㹁㹓㹐㹔㹃㹑 0 50 100 150 200 250 300 Collector Current IC (A) Switching Loss ESW (mJ/Pulse) Fig.7- Collector Current vs. Switching Loss EOFF EON VCC =600V R G =2.4Ȑ VGE =±15V Tj=125°C Tj=150°C Inductive Load ERR 1 3 10 30 0.3 100 300 1000 Series Gate Impedance RG (Ȑ) Switching Loss ESW (mJ/Pulse) Fig.8- Series Gate Impedance vs. Switching Loss EOFF EON VCC =600V IC =300A VGE =±15V Tj=125°C Tj=150°C Inductive Load ERR 0 1 2 3 4 150 300 450 600 Forward Voltage VF (V) Forward Current IF (A) Fig.9- Forward Characteristics of FWD (Typical) Tj=25°C Tj=125°C Tj=150°C 0 50 100 150 200 250 300 100 300 1000 Forward Current IF (A) Peak Reverse Recovery Current IRrM (A) Reverse Recovery Time trr (ns) Fig.10- FWD Reverse Recovery Characteristics (Typical) IRrM trr V CC =600V, VGE =±15V, RG =2.4Ȑ Tj=125°C Tj=150°C 0 200 400 600 800 1000 1200 1400 1600 0.1 0.3 100 300 1000 3000 Collector to Emitter Voltage VCE (V) Reverse Voltage VR (V) Collector Current IC (A) Reverse Recovery Current IRR (A) Fig.11- Reverse Bias Safe Operating Area R G =2.4Ȑ, VGE =±15V, Tj<150°C (Chip level) 10-5 10-4 10-3 10-2 10-1 1 101 1x10-3 3x10-3 1x10-2 3x10-2 1x10-1 3x10-1 Time t (s) Transient Thermal Impedance Rth(J-C)(°C/W) Fig.12- Transient Thermal Impedance TC =25°C