PCGA200T65NF8M ONSEMI | Alldatasheet

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To learn more about onsemi™, please visit our website at www.onsemi.com ON Semiconductor Is Now onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ onsemi ” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi . “Typical” parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.

© Semiconductor Components Industries, LLC, 2018 August, 2018 − Rev. 0

1 Publication Order Number:

650 V, 200 A Field Stop

Trench IGBT with Solderable Top Metal

Features

  • AEC−Q101 Qualified
  • Maximum Junction Temperature 175/C0095C
  • Positive Temperature Coefficient
  • Easy Paralleling
  • Short Circuit Rated
  • Very Low Saturation V oltage: VCE(SAT) = 1.53 V(Typ.) @ IC = 200 A
  • Optimized for Motor Control Applications
  • Emitter Pad Covered with Solderable Metal Layer

Applications

  • Automotive Traction Modules
  • General Power Modules

ORDERING INFORMATION

Part Number PCGA200T65NF8M1 Packing Water (sawn on foil) mils /C0109m Die Size 394 × 394 10,000 × 10,000 Emitter Attach Area 2 × (177 × 348) 2 × (4,493.5 × 8,832) Gate / Sensor Pad Attach Area 55 × 55 1,408 × 1,406 Die Thickness 3 79 Top Metal 5 /C0109m AlSiCu + 1.15 /C0109m Ti/NiV/Ag (STM) Back Metal 0.95 /C0109m NiV/Ag Topside Passivation Silicon Nitride plus Polyimide Wafer Diameter 200 mm Max Possible Die Per Wafer 234 www.onsemi.com

www.onsemi.com ABSOLUTE MAXIMUM RATINGS (TJ = 25/C0095C unless otherwise noted) Parameter Symbol Ratings Units Collector−Emitter Voltage VCES 650 V Gate−Emitter Voltage VGES ±20 V DC Collector Current, limited by TJ max IC (Note 1) A Pulsed Collector Current, VGE=15 V, tp limited by TJ max (Note 2) ICM 600 A Short Circuit Withstand Time, VGE = 15 V, VCE ≤ 400 V, TJ ≤ 150°C tsc 5 /C0109s Operating Junction Temperature TJ −40 to +175 /C0095C Storage Temperature Range Tstg +17 to +25 /C0095C 1. Depends on the thermal properties of assembly 2. Not subject to production test − verified by design/characterization ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol Test Condition Min. Typ. Max. Units Static Characteristics (Tested on wafers) Collector−Emitter Breakdown Voltage BVCES VGE = 0 V, IC = 1 mA 650 − − V Collector−Emitter Saturation Voltage VCE(SAT) IC = 100 A, VGE = 15 V − 1.25 1.75 V Gate−Emitter Threshold Voltage VGE(th) VGE = VCE, IC = 200 mA 4.5 5.5 6.5 V Collector Cut−Off Current ICES VCE = VCES, VGE = 0 V − − 40 /C0109A Gate Leakage Current IGES VGE = VGES, VCE = 0 V − − ±400 nA Electrical Characteristics (Not subjected to production test − verified by design/characterization) Collector to Emitter Saturation Voltage VCE(SAT) IC = 200 A, VGE = 15 V TJ = 25°C − 1.53 1.9 V TJ = 175°C − 2.04 − V Input Capacitance CIES VCE = 30 V, VGE = 0 V f = 1 MHz − 9.6 − nF Output Capacitance COES − 445 − pF Reverse Transfer Capacitance CRES − 78 − pF Internal Gate Resistance RG f = 1 MHz − 2.0 − /C0087 Total Gate Charge QG(Total) VCE = 400 V, IC = 200 A VGE = 15 V − 229 − nC Gate−to−Emitter Charge QGE − 66 − nC Gate−to−Collector Charge QGC − 64 − nC Turn−On Delay Time td(on) VCE = 400 V, IC = 200 A RG = 15 /C0087 VGE = 15 V Inductive Load TJ = 25°C − 67 − ns Rise Time tr − 233 − ns Turn−Off Delay Time td(off) − 118 − ns Fall Time tf − 177 − ns Turn−On Delay Time td(on) VCE = 400 V, IC = 200 A RG = 15 /C0087 VGE = 15 V Inductive Load TJ = 175°C − 64 − ns Rise Time tr − 236 − ns Turn−Off Delay Time td(off) − 124 − ns Fall Time tf − 208 − ns 3. For ordering, technique and other information on Onsemi automotive bare die products, please contact automotivebaredie@onsemi.com

Figure 1. Dimensional Outline and Pad Layout ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries i n the United States and/or other countries. laws and is not for resale in any manner.