PCFA86062F

PCFA86062F ONSEMI | Alldatasheet

Document overview

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Technical content

Features

• Typical RDS(on) = 1.4 m/C0087 at VGS = 10 V
• Typical Qg(tot) = 95 nC at VGS = 10 V
• AEC−Q101 Qualified and PPAP Capable
• RoHS Compliant DIMENSION (/C0109m) Die Size 6604 × 3683 Die Size (Sawn) 6584 ±15 × 3663 ±15 Source Attach Area (5971.4 × 1639.6) × 2 Gate Attach Area 390 × 540 Die Thickness 101.6 ±19.1 Gate and Source: AlSiCu Drain: Ti−NiV−Ag (back side of die) Passivation: Polyimide Wafer Diameter: 8 inch Wafer sawn on UV Tape Bad dice identified in inking Gross Die Counts: 1006 The Chip is 100% Probed to Meet the Conditions and Limits Specified at TJ = 25°C. Symbol Parameter Condition Min Typ Max Unit BVDSS Drain to Source Breakdown Voltage ID = 250 /C0109A, VGS = 0 V 100 − − V IDSS Drain to Source Leakage Current VDS = 100 V, VGS = 0 V − − 5 /C0109A IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V − − ±100 nA VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 /C0109A 2.0 − 4.0 V *RDS(on) Bare Die Drain to Source On Resistance ID = 5 A, VGS = 10 V − 1.4 1.8 m/C0087 VSD Source to Drain Diode Voltage ISD = 5 A, VGS = 0 V − − 1.25 V *Accurate RDS(on) test at die level is not feasible as limited by the test contact precision attainable in a die form. The max RDS(on) specification is defined from the historical performance of the die in package but is not guaranteed by test in production. The die R DS(on) performance depends on the Source wire/ribbon bonding layout. www.onsemi.com Device Package

ORDERING INFORMATION

RECOMMENDED STORAGE CONDITIONS 40 to 66%RH 22 to 28°CTemperature

www.onsemi.com MOSFET MAXIMUM RATINGS in Reference to the FDBL86062−F085 electrical data in TOLL (TJ = 25°C unless otherwise noted) Symbol Parameter Ratings Unit VDSS Drain to Source Voltage 100 V VGS Gate to Source Voltage ±20 V ID Continuous Drain Current R/C0113JC (VGS = 10) (Note 1) TC = 25°C TC = 100°C 315.7 223.2 A EAS Single Pulse Avalanche Energy (Note 2) 352 mJ PD Power Dissipation R/C0113JC 429 W Derate Above 25°C 2.86 W/°C TJ, TSTG Operating and Storage Temperature −55 to +175 °C R/C0113JC Thermal Resistance, Junction to Case 0.35 °C/W R/C0113JA Thermal Resistance, Junction to Ambient (Note 3) 43 °C/W Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Current is limited by silicon. 2. Starting T J = 25°C, L = 0.1 mH, IAS = 84 A 3. R /C0113JA is the sum of the junction−to−case and case−to−ambient thermal resistance, where the case thermal reference is defined as the solder mounting surface of the drain pins. R /C0113JC is guaranteed by design, while R /C0113JA is determined by the board design. The maximum rating presented here is based on mounting on a 1 in2 pad of 2oz copper. ELECTRICAL CHARACTERISTICS in Reference to the FDBL86062−F085 electrical data in TOLL (TJ = 25°C unless otherwise noted) Symbol Parameter Test Conditions Min. Typ. Max. Unit OFF CHARACTERISTICS BVDSS Drain to Source Breakdown Voltage ID = 250 /C0109A, VGS = 0 V 100 − − V IDSS Drain to Source Leakage Current VDS = 100 V, VGS = 0 V TJ = 25°C − − 5 /C0109A TJ = 175°C (Note 4) − − 2 mA IGSS Gate to Source Leakage Current VGS = ±20 V − − ±100 nA ON CHARACTERISTICS VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 /C0109A 2.0 3.1 4.0 V RDS(on) Drain to Source On−Resistance ID = 80 A, VGS = 10 V TJ = 25°C − 1.5 2.0 m/C0087 TJ = 175°C (Note 4) − 3.3 4.3 m/C0087 DYNAMIC CHARACTERISTICS Ciss Input Capacitance VDS = 50 V, VGS = 0 V, f = 1 MHz − 6970 − pF Coss Output Capacitance − 3950 − pF Crss Reverse Transfer Capacitance − 29 − pF Rg Gate Resistance f = 1 MHz − 0.4 − /C0087 Qg(ToT) Total Gate Charge VGS = 0 to 10 V, VDD = 80 V, ID = 80 A − 95 − nC Qg(th) Threshold Gate Charge VGS = 0 to 2 V, VDD = 80 V, ID = 80 A − 13 − nC Qgs Gate to Source Gate Charge VDD = 75 V, ID = 80 A − 31 − nC Qgd Gate to Drain “Miller” Charge − 20 − nC SWITCHING CHARACTERISTICS td(on) Turn−On Delay VDD = 50 V, ID = 80 A, VGS = 10 V, RGEN = 6 /C0087 − 31 − ns tr Rise Time − 25 − ns td(off) Turn−Off Delay − 36 − ns tf Fall Time − 9 − ns

www.onsemi.com ELECTRICAL CHARACTERISTICS in Reference to the FDBL86062−F085 electrical data in TOLL (TJ = 25°C unless otherwise noted) Symbol UnitMax.Typ.Min.Test ConditionsParameter DRAIN−SOURCE DIODE CHARACTERISTIC VSD Source to Drain Diode Voltage ISD = 80 A, VGS = 0 V − − 1.25 V ISD = 40 A, VGS = 0 V − − 1.2 V trr Reverse Recovery Time IF = 80 A, dISD/dt = 100 A//C0109s, VDD = 80 V − 115 − ns Qrr Reverse Recovery Charge − 172 − nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. The maximum value is specified by design at T J = 175°C. Product is not tested to this condition in production.

Figure 5. Forward Bias Safe Operating Area Figure 6. Unclamped Inductive Switching Figure 7. Transfer Characteristics Figure 8. Forward Diode Characteristics Figure 9. Saturation Characteristics Figure 10. Saturation Characteristics

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