PC817A

PC817A TGS | Alldatasheet

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High Density DIP Type Photocoupler PC817 Series Ƶ Features ƽ Current transfer ratio ( CTR: MIN. 50% at IF =5 m A, VCE=5V) ƽ High isolation voltage between input and output Ƶ Absolute Maximum Ratings Ta = 25ć Parameter Symbol Rating Unit Input Reverse voltage V R 6 Collector - Emitter Output Voltage V CEO 35 Emitter-Collector Output Voltage V ECO 6 Isolation Voltage V ISO 5000 Input Forward Current I F 50 mA Input Peak Forward Current (Note.1) I FM 1A Collector Current - Continuous I C 50 mA Input Power Dissipation P 70 Collector Output Power dissipation Pc 150 Total Power Dissipation P tot 200 Junction Temperature T J 125 Soldering temperature T sol 260 Operating Temperature T opr - 3 0t o1 0 0 Storage Temperature Range T stg - 5 5t o1 2 5 ć V mW Note.1:Pulse widthİ100ms, Duty ratio : 0.001 Vrms Anode mark TIGER ELECTRONIC CO.,LTD

High Density DIP Type Photocoupler PC817 Series Ƶ Electrical Characteristics Ta = 25ć Parameter Symbol Test Conditions Min Typ Max Unit Input Forward Voltage V F IF=2 0m A 1 . 4 Input Peak Forward Voltage V FM IFM= 500 mA 3 Input Reverse Current I R VR=4V 1 0 uA C o l l e c t o r -e m i t t e rc u t - o f fc u r r e n t ICEO VCE=2 0V,I E=0 1 0 Collector-emitter saturation voltage V CE(sat) IF =2 0 m A ,IC =1 m A 0 . 1 0 . 2 V Isolation resistance R ISO DC 500V, 40 to 60% RH 5 x 10 ȍ Current Transfer Ratio CTR V CE=5 V ,IF= 5mA 50 600 % Rise time t r 41 8 Fall time t f 31 8 Input Terminal Capacitance C t 30 250 Floating Capacitance C f 0.6 1 Cut-off frequency f C VCE=5 V ,IC=2 m A , RL=100ȍ 80 KHz V V= 0V, f=1KHz pF VCE =2 V ,IC =2 m A ,RL =1 0 0ȍ uS Ƶ Classification of CTR(%) Type PC817A PC817B PC817C PC817D PC817 Range 80-160 130-260 200-400 300-600 50-600 Ƶ Typical Characterisitics -2 5 0 25 50 75 100 125 Fig. 1 Forward Current vs. Ambient Temperature Ambient temperature Ta (Û&) Forward current I F ( mA )

High Density DIP Type Photocoupler PC817 Series Ƶ Typical Characterisitics Duty ratio Pulse width <=100 Ps 100 200 500 210 -3 10 -25 2 10 -15 2 5 Fig. 3 Peak Forward Current vs. Duty Ratio Current transfer ratio CTR ( % ) 200 2 5 10 20 50 160 120 100 140 180 100 150 0 25 50 75 100 Relative current transfer ratio ( % ) Fig. 7 Relative Current Transfer Ratio vs. Ambient Temperature 23 45 6789 20mA 10mA 5mA Fig. 6 Collector Current vs. Collector-emitter Voltage Peak forward current I FM ( mA ) Fig. 4 Current Transfer Ratio vs. Forward Current Forward current I F ( mA ) Collector current IC ( mA ) Collector-emitter voltage V CE (V) Ambient temperature T a (Û&) 5210 100 200 150 25 50 75 100 Ambient TemperatureC ( mW ) -3 0 Fig. 2 Collector Power Dissipation vs. a (Û&) Collector power dissipation P Ambient temperature T VCE =5 V IF = 30mA PC(MAX.) IF = 5mA VCE =5 V Fig. 5 Forward Current vs. Forward Voltage 10 000 5 000 2 000 1 000 Ta = Û& Ta = Û& Û& Û& 100 200 500 - Û& Ta = Û& Forward current I F ( mA ) Forward voltage V F ( V) -3 0 Ta= Û&

High Density DIP Type Photocoupler PC817 Series Ƶ Typical Characterisitics 0.02 - 25 0 25 50 75 100 0.04 0.06 0.08 0.10 0.12 0.14 0.16 Fig. 8 Collector-emitter Saturation Voltage vs. Ambient Temperature 250 50 75 100 Collector dark current I CEO ( A) Fig.11 Frequency Response Frequency f (kHz ) -20 0.5 1 2 5 -10 200100502010 500 1k : 100 : Fig. 9 Collector Dark Current vs. CE(sat) (V) Ambient TemperatureVoltage gain A v (dB ) 0.2 0.1 0.5 Response time (Ps) 0.1 1 10 100 200 500 L (k :) Collector-emitter saturation voltage VCE(sat) (V) Forward current I F ( mA ) 51 0 7mA Fig.12 Collector-emitter Saturation Voltage vs. Forward CurrentTest Circuit for Response Time VCC ttr ts 90% 10% td Output Input RLInput OutputRD VCC RL OutputRD Test Circuit for Frepuency Response Collector-emitter saturation voltage V Ambient temperature T a (Û&) f IF = 20mA IC = 1mA 10 -1 1 10 -1 0 10 -9 10 -8 10 -7 10 -6 10 -5 -2 5 VCE = 20V Ambient temperature T a t r t f ts td VCE =2 V IC = 2mA Ta = Û& RL = 10k : VCE =2 V 1mA 3mA 5mA Ta = Û& IC = 2mA IC = 0.5mA Ta = Û& Fig.10 Response Time vs. Load Resistance Load resistance R